LP2995 DDR Termination Regulator

文件：1.23463 Mbytes Page：22 Pages

DDR Termination Regulator

文件：1.47715 Mbytes Page：24 Pages

DDR Termination Regulator

文件：291.7 Kbytes Page：13 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC REGULATOR DDR TERM 8-SOIC 集成电路（IC） 电源管理 - 专用

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC REGULATOR DDR TERM 8-SOIC 集成电路（IC） 电源管理 - 专用

DDR Termination Regulator

文件：1.47715 Mbytes Page：24 Pages

DDR Termination Regulator

文件：1.47715 Mbytes Page：24 Pages

100 V, Low IQ, Synchronous Step-Down Controller for GaN FETs

GENERAL DESCRIPTION The LTC7891 is a high performance, step-down, dc-to-dc switching regulator controller that drives all N-channel synchronous gallium nitride (GaN) field effect transistor (FET) power stages from input voltages up to 100 V. The LTC7891 solves many of the challenges tradition

N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC−DC Converter and Motor Drive Applications ● Low drain−source ON resistance : RDS (ON) = 48 mΩ (typ.) ● High forward transfer admittance : |Yfs| = 30 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 250 V) ● Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID

Demonstration board user guidelines

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G2995 Evaluation Board Manual

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DDR Termination Regulator

文件：272.62 Kbytes Page：12 Pages