LND150价格
参考价格：￥1.9448
型号：LND150K1-G 品牌：Microchip 备注：这里有LND150多少钱，2026年最近7天走势，今日出价，今日竞价，LND150批发/采购报价，LND150行情走势销售排行榜，LND150报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
LND150 | N-Channel Depletion-Mode MOSFET General Description The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, | SUTEX |   | |
LND150 | N-Channel Depletion-Mode DMOS FET General Description The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, | SUTEX | | |
LND150 | N-Channel Depletion-Mode DMOS FET General Description The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, | SUTEX | | |
LND150 | N-Channel Depletion-Mode DMOS FET General Description The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, | SUTEX | | |
LND150 | N-Channel Depletion-Mode DMOS FET The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected.The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplifi Free from secondary breakdown \nLow power drive requirement \nEase of paralleling \nExcellent thermal stability \nIntegral source-drain diode \nHigh input impedance and low CISS \nESD gate protection; | MICROCHIP 微芯科技 | | |
LND150 | N-Channel Depletion-Mode DMOS FET 文件：651.64 Kbytes Page：7 Pages | SUTEX | | |
LND150 | N-Channel Depletion-Mode DMOS FET 文件：602.63 Kbytes Page：7 Pages | SUTEX | | |
LND150 | N-Channel Depletion-Mode DMOS FETs 文件：580.93 Kbytes Page：16 Pages | MICROCHIP 微芯科技 | | |
N-Channel Depletion-Mode DMOS FET General Description The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, | SUTEX | | ||
N-Channel Depletion-Mode MOSFET General Description The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, | SUTEX | | ||
N-Channel Depletion-Mode DMOS FET General Description The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, | SUTEX | | ||
N-Channel Depletion-Mode MOSFET General Description The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, | SUTEX | | ||
N-Channel Depletion-Mode DMOS FET General Description The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, | SUTEX | | ||
N- Channel Depletion Mode MOSFETS Features ⚫ Halogen and Antimony Free ⚫ Depletion Mode ⚫ ESD improved Capability ⚫ VDS= 500V,ID= 0.03A RDS(on) | ZHAOXINGWEI | | ||
N-Channel Depletion-Mode MOSFET General Description The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, | SUTEX | | ||
N-Channel Depletion-Mode DMOS FET 文件：602.63 Kbytes Page：7 Pages | SUTEX | | ||
N-Channel Depletion-Mode DMOS FET 文件：651.64 Kbytes Page：7 Pages | SUTEX | | ||
N-Channel Depletion-Mode DMOS FET 文件：602.63 Kbytes Page：7 Pages | SUTEX | | ||
N-Channel Depletion-Mode DMOS FETs 文件：580.93 Kbytes Page：16 Pages | MICROCHIP 微芯科技 | | ||
N-Channel Depletion-Mode DMOS FETs 文件：580.93 Kbytes Page：16 Pages | MICROCHIP 微芯科技 | | ||
N-Channel Depletion-Mode DMOS FETs 文件：580.93 Kbytes Page：16 Pages | MICROCHIP 微芯科技 | | ||
N-Channel Depletion-Mode DMOS FETs 文件：580.93 Kbytes Page：16 Pages | MICROCHIP 微芯科技 | | ||
N-Channel Depletion-Mode MOSFET | MICROCHIP 微芯科技 | | ||
N-Channel Depletion-Mode DMOS FET 文件：602.63 Kbytes Page：7 Pages | SUTEX | | ||
N-Channel Depletion-Mode DMOS FET 文件：651.64 Kbytes Page：7 Pages | SUTEX | | ||
N-Channel Depletion-Mode DMOS FETs 文件：580.93 Kbytes Page：16 Pages | MICROCHIP 微芯科技 | | ||
N-Channel Depletion-Mode DMOS FET 文件：602.63 Kbytes Page：7 Pages | SUTEX | | ||
N-Channel Depletion-Mode DMOS FETs 文件：580.93 Kbytes Page：16 Pages | MICROCHIP 微芯科技 | | ||
N-Channel Depletion-Mode DMOS FET 文件：602.63 Kbytes Page：7 Pages | SUTEX | | ||
N-Channel Depletion-Mode DMOS FET 文件：602.63 Kbytes Page：7 Pages | SUTEX | | ||
N-Channel Depletion-Mode DMOS FETs 文件：580.93 Kbytes Page：16 Pages | MICROCHIP 微芯科技 | | ||
N-Channel Depletion-Mode DMOS FET 文件：602.63 Kbytes Page：7 Pages | SUTEX | | ||
N-Channel Depletion-Mode DMOS FETs 文件：580.93 Kbytes Page：16 Pages | MICROCHIP 微芯科技 | | ||
N-Channel Depletion-Mode DMOS FET 文件：602.63 Kbytes Page：7 Pages | SUTEX | | ||
N-Channel Depletion-Mode DMOS FET 文件：651.64 Kbytes Page：7 Pages | SUTEX | | ||
N-Channel Depletion-Mode DMOS FET 文件：602.63 Kbytes Page：7 Pages | SUTEX | | ||
N-Channel Depletion-Mode DMOS FETs 文件：580.93 Kbytes Page：16 Pages | MICROCHIP 微芯科技 | | ||
N-Channel Depletion-Mode DMOS FETs 文件：580.93 Kbytes Page：16 Pages | MICROCHIP 微芯科技 | | ||
N-Channel Depletion-Mode DMOS FETs 文件：580.93 Kbytes Page：16 Pages | MICROCHIP 微芯科技 | | ||
N-Channel Depletion-Mode DMOS FETs 文件：580.93 Kbytes Page：16 Pages | MICROCHIP 微芯科技 | | ||
HIGH POWER SWITCHING USE INSULATED TYPE HIGH POWER SWITCHING USE INSULATED TYPE • IC Collector current 150A • VCEX Collector-emitter voltage 600V • hFE DC current gain 75 • Insulated Type • UL Recognized Yellow Card No. E80276 (N) | MITSUBISHI 三菱电机 | | ||
HIGH POWER SWITCHING USE INSULATED TYPE HIGH POWER SWITCHING USE INSULATED TYPE • IC Collector current 150A • VCEX Collector-emitter voltage 600V • hFE DC current gain 750 • Insulated Type • UL Recognized Yellow Card No. E80276 (N) | MITSUBISHI 三菱电机 | | ||
HIGH POWER SWITCHING USE INSULATED TYPE HIGH POWER SWITCHING USE INSULATED TYPE • IC Collector current 150A • VCEX Collector-emitter voltage 600V • hFE DC current gain 75 • Insulated Type • UL Recognized Yellow Card No. E80276 (N) | MITSUBISHI 三菱电机 | | ||
HIGH POWER SWITCHING USE INSULATED TYPE HIGH POWER SWITCHING USE INSULATED TYPE • IC Collector current 150A • VCEX Collector-emitter voltage 600V • hFE DC current gain 750 • Insulated Type • UL Recognized Yellow Card No. E80276 (N) | MITSUBISHI 三菱电机 | | ||
HIGH POWER GENERAL USE INSULATED TYPE HIGH POWER GENERAL USE INSULATED TYPE • IF(AV) Average forward current 150A • VRRM Repetitive peak reverse voltage 400/800/1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, DC | MITSUBISHI 三菱电机 | |
LND150产品属性
- 类型
描述
- BVdsx min (V)：
500
- Packages：
3\\SOT-233\\SOT-893\\TO-92
- RDS (Ohms)：
1000
- Vgs(off) max (V)：
-3.0
- Vgs(off) min (V)：
-1.0
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Microchip(微芯) |
24+ |
标准封装 |
14698 |
原厂渠道供应,大量现货,原型号开票。 |
|||
原装 |
25+ |
标准 |
35227 |
热卖原装进口 |
|||
MICROCHIP |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
SUPERTEXI |
2021+ |
SOT89 |
16800 |
全新原装正品,自家优势现货 |
|||
MICROCHIP |
24+ |
N/A |
10000 |
只做原装,实单最低价支持 |
|||
MICROCHIP/微芯 |
2024 |
明嘉莱只做原装正品现货 |
2510000 |
TO-92 |
|||
Microchip(微芯) |
23+ |
SOT-89-3 |
25900 |
新到现货,只有原装 |
|||
Microchip(微芯) |
2602+ |
SOT-89-3 |
5046 |
只做原装现货假一罚十!价格最低!只卖原装现货 |
|||
Microchip(微芯) |
26+ |
原厂原封 |
9000 |
保证原装正品 深圳现货 |
|||
MICROCHIP/微芯 |
2025+ |
SOT-89 |
5000 |
原装进口价格优 请找坤融电子! |
LND150规格书下载地址
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DdatasheetPDF页码索引
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