LNA价格

参考价格:¥3.6914

型号:LNA2701L 品牌:Panasonic 备注:这里有LNA多少钱,2025年最近7天走势,今日出价,今日竞价,LNA批发/采购报价,LNA行情走势销售排行榜,LNA报价。
型号 功能描述 生产厂家&企业 LOGO 操作

GaAs Infrared Light Emitting Diode

GaAsInfraredLightEmittingDiode Foropticalcontrolsystems Features ●High-poweroutput,high-efficiency ●Emittedlightspectrumsuitedforsiliconphotodetectors ●Infraredlightemissionclosetomonochromaticlight:λP=950nm ●Ultra-miniature,thinside-viewtypepackage

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

GaAs Infrared Light Emitting Diode

GaAsInfraredLightEmittingDiode Foropticalcontrolsystems Features ●High-poweroutput,high-efficiency:PO=6mW(typ.) ●Emittedlightspectrumsuitedforsiliconphotodetectors: λP=940nm(typ.) ●Longlifetime,highreliability ●Thinside-viewtypepackage

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

GaAlAs on GaAs Infrared Light Emitting Diode

GaAlAsonGaAsInfraredLightEmittingDiode Foropticalcontrolsystems ■Features •High-poweroutput,high-efficiency:PO=9mWmin. •Emittedlightspectrumsuitedforsiliconphotodetectors •Ultra-miniature,thinside-viewtypepackage •Longlifetime,highreliability

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

GaAs Bi-directional Infrared Light Emitting Diode

GaAsBi-directionalInfraredLightEmittingDiode ForlightsourceofVCR(VHSSystem) Features ●Two-waydirectivity ●High-poweroutput,high-efficiency:PO=1.8mW(min.) ●Smallresinpackage ●Longlifetime,highreliability ●ThintypepackagemodifiedfromLN59 Applications ●Lig

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

GaAlAs on GaAs Infrared Light Emitting Diode

GaAlAsonGaAsInfraredLightEmittingDiode Foropticalcontrolsystems Features ●High-poweroutput,high-efficiency:Ie=6mW/sr(min.) ●Emittedlightspectrumsuitedforsiliconphotodetectors ●Goodradiantpoweroutputlinearitywithrespecttoinputcurrent ●ø3plasticpackage

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

GaAs Infrared Light Emitting Diode

GaAsInfraredLightEmittingDiode Foropticalcontrolsystems Features ●High-poweroutput,high-efficiency:PO=5mW(typ.) ●Emittedlightspectrumsuitedforsiliconphotodetectors: λP=940nm(typ.) ●Goodradiantpoweroutputlinearitywithrespecttoinputcurrent ●Longlifet

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

GaAs Infrared Light Emitting Diode

GaAsInfraredLightEmittingDiode Foropticalcontrolsystems Features ●High-poweroutput,high-efficiency:Ie=9mW/sr(min.) ●Emittedlightspectrumsuitedforsiliconphotodetectors ●Transparentepoxyresinpackage ●Longlead-wiretype

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

GaAs infrared light emitting diode For optical control systems

GaAsinfraredlightemittingdiode Foropticalcontrolsystems ■Features •High-poweroutput,high-efficiency:Ie=9mW/sr(min.) •Emittedlightspectrumissuitedforsiliconphotodetectors •Goodradiantpoweroutputlinearitywithrespecttoinputcurrent •Widedirectivity:θ=20°(t

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

GaAs Infrared Light Emitting Diode

GaAsInfraredLightEmittingDiode Foropticalcontrolsystems Features ●High-poweroutput,high-efficiency:Ie=9mW/sr(min.) ●Emittedlightspectrumsuitedforsiliconphotodetectors ●Goodradiantpoweroutputlinearitywithrespecttoinputcurrent ●Widedirectivity:θ=20deg.(

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

GaAs Infrared Light Emitting Diode

GaAsInfraredLightEmittingDiode Foropticalcontrolsystems Features ●High-poweroutput,high-efficiency:Ie=10mW/sr(min.) ●Emittedlightspectrumsuitedforsiliconphotodetectors ●Goodradiantpoweroutputlinearitywithrespecttoinputcurrent ●Highcenterradiantintensity

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

GaAs Infrared Light Emitting Diode

GaAsInfraredLightEmittingDiode Foropticalcontrolsystems Features ●High-poweroutput,high-efficiency:PO=4.5mW(typ.) ●Emittedlightspectrumsuitedforsiliconphotodetectors ●Infraredlightemissionclosetomonochromaticlight: λP=950nm(typ.) ●Narrowdirectivity:

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

GaAlAs Infrared Light Emitting Diode

GaAlAsInfraredLightEmittingDiode Foropticalcontrolsystems Features ●High-poweroutput,high-efficiency:PO=10mW(typ.) ●Fastresponseandhigh-speedmodulationcapability: fC=20MHz(typ.) ●TO-18standardtypepackage

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

GaAlAs Red Light Emitting Diode

GaAlAsRedLightEmittingDiode Foropticalfibercommunicationsandcontrolsystems Features ●Redlightemissionclosetomonochromaticlight:λP=680nm ●High-poweroutput,high-efficiency:PO=3mW ●Highcouplingcharacteristicsandsuitstoaplasticfiber ●High-speedresponse:

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

GaAlAs Infrared Light Emitting Diode

GaAlAsInfraredLightEmittingDiode Foropticalcontrolsystems ■Features •High-poweroutput,high-efficiency •Light-emittingpatternofalmostpointsource •Ultra-miniature,thinside-viewtypepackage

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

GaAlAs Infrared Light Emitting Diode

GaAlAsInfraredLightEmittingDiode Foropticalcontrolsystems Features ●Fastresponseandhigh-speedmodulationcapability: fC=20MHz(typ.) ●Widedirectivity:θ=22deg.(typ.) ●Transparentepoxyresinpackage

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

GaAs Infrared Light Emitting Diode

GaAlAsInfraredLightEmittingDiode Foropticalcontrolsystems ■Features ●High-poweroutput,high-efficiency:PO=15mW(min.) ●Fastresponseandhigh-speedmodulationcapability:fC=30MHz(typ.) ●Transparentepoxyresinpackage

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

Unconditionally stable

文件:573.14 Kbytes Page:3 Pages

L3HARRIS

L3Harris Narda-MITEQ

L3HARRIS

Unconditionally stable

文件:584.87 Kbytes Page:3 Pages

L3HARRIS

L3Harris Narda-MITEQ

L3HARRIS

封装/外壳:模块,SMA 连接器 包装:盒 描述:AMPLIFIER RF/IF,射频/中频和 RFID 射频放大器

ETC

知名厂家

封装/外壳:模块,SMA 连接器 包装:盒 描述:AMPLIFIER RF/IF,射频/中频和 RFID 射频放大器

ETC

知名厂家

Unconditionally stable

文件:567.8 Kbytes Page:3 Pages

L3HARRIS

L3Harris Narda-MITEQ

L3HARRIS

LOW NOISE AMPLIFIER

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L3Harris Narda-MITEQ

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LOW NOISE AMPLIFIER

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L3Harris Narda-MITEQ

L3HARRIS

LOW NOISE AMPLIFIER

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LOW NOISE AMPLIFIER

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L3HARRIS

LOW NOISE AMPLIFIER

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L3HARRIS

L3Harris Narda-MITEQ

L3HARRIS

LNA产品属性

  • 类型

    描述

  • 型号

    LNA

  • 功能描述

    IR LED 950NM 8 DEG TO-18

  • RoHS

  • 类别

    光电元件 >> 红外发射极

  • 系列

    -

  • 标准包装

    1,200

  • 系列

    - 电流 - DC

  • 正向(If)

    100mA

  • 辐射强度(le)最小值@正向电流

    27mW/sr @ 100mA

  • 波长

    940nm

  • 正向电压

    1.6V

  • 视角

    40°

  • 方向

    顶视图

  • 安装类型

    通孔

  • 封装/外壳

    径向

  • 包装

    带卷(TR)

更新时间:2025-7-27 21:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA原装
25+23+
DIP
29462
绝对原装正品全新进口深圳现货
TOSHIBA/东芝
25+
DIP
65428
百分百原装现货 实单必成
TOSHIBA/东芝
24+
DIP
880000
明嘉莱只做原装正品现货
PANASONIC
24+
500
rf-bay
24+
模块
400
PANASONIC原装
23+
DIP-2
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
TOSHIBA
13+
DIP
18048
原装分销
SMD
23+
NA
15659
振宏微专业只做正品,假一罚百!
PANASONIC
20+
光电元件
9136
就找我吧!--邀您体验愉快问购元件!
RFbay
700

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