GAAS INFRARED LIGHT EMITTING DIODE

GaAs Infrared Light Emitting Diode For Optical Control Systems Features ● High-power output : PO = 4.5 mW (typ.) ● Output spectrally compatible with silicon sensors ● Infrared radiation : λP = 950 nm (typ.) ● Sharp angle radiation : θ = 18 deg (typ.) ● Miniature double ended package

EPITAXIAL 4-LAYER DIODES 10-15YOLTS 150mW

• Low Breakover (Switching) Voltage - 10 to 15·Volt Ratings • Fast Switching Speeds - ton = 75 ns (Typ) toff = 250 ns (Typ) • Low Junction Capacitance - 45 pF (Typ) • Low Breakover Currents • Subminiature Glass Package

EPITAXIAL 4-LAYER DIODES 10-15YOLTS 150mW

• Low Breakover (Switching) Voltage - 10 to 15·Volt Ratings • Fast Switching Speeds - ton = 75 ns (Typ) toff = 250 ns (Typ) • Low Junction Capacitance - 45 pF (Typ) • Low Breakover Currents • Subminiature Glass Package

EPITAXIAL 4-LAYER DIODES 10-15YOLTS 150mW

• Low Breakover (Switching) Voltage - 10 to 15·Volt Ratings • Fast Switching Speeds - ton = 75 ns (Typ) toff = 250 ns (Typ) • Low Junction Capacitance - 45 pF (Typ) • Low Breakover Currents • Subminiature Glass Package