Low Current Consumption, High Sensitivity CMOS Hall IC

■ General Description The LN4913 is an integrated hall-effect sensor designed specifically to meet the requirements of low-power devices. e.g. as an On/Off switch in Cellular Flip-Phones, with battery operating voltages of 1.65V-5.5V. Precise magnetic switching points and high temperature st

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Low Current Consumption, High Sensitivity CMOS Hall IC

■ General Description The LN4913 is an integrated hall-effect sensor designed specifically to meet the requirements of low-power devices. e.g. as an On/Off switch in Cellular Flip-Phones, with battery operating voltages of 1.65V-5.5V. Precise magnetic switching points and high temperature st

Low Current Consumption, High Sensitivity CMOS Hall IC

■ General Description The LN4913 is an integrated hall-effect sensor designed specifically to meet the requirements of low-power devices. e.g. as an On/Off switch in Cellular Flip-Phones, with battery operating voltages of 1.65V-5.5V. Precise magnetic switching points and high temperature st

Low Current Consumption, High Sensitivity CMOS Hall IC

■ General Description The LN4913 is an integrated hall-effect sensor designed specifically to meet the requirements of low-power devices. e.g. as an On/Off switch in Cellular Flip-Phones, with battery operating voltages of 1.65V-5.5V. Precise magnetic switching points and high temperature st

Low Current Consumption, High Sensitivity CMOS Hall IC

■ General Description The LN4913 is an integrated hall-effect sensor designed specifically to meet the requirements of low-power devices. e.g. as an On/Off switch in Cellular Flip-Phones, with battery operating voltages of 1.65V-5.5V. Precise magnetic switching points and high temperature st

Low Current Consumption, High Sensitivity CMOS Hall IC

■ General Description The LN4913 is an integrated hall-effect sensor designed specifically to meet the requirements of low-power devices. e.g. as an On/Off switch in Cellular Flip-Phones, with battery operating voltages of 1.65V-5.5V. Precise magnetic switching points and high temperature st

Low Current Consumption, High Sensitivity CMOS Hall IC

■ General Description The LN4913 is an integrated hall-effect sensor designed specifically to meet the requirements of low-power devices. e.g. as an On/Off switch in Cellular Flip-Phones, with battery operating voltages of 1.65V-5.5V. Precise magnetic switching points and high temperature st

Low Current Consumption, High Sensitivity CMOS Hall IC

■ General Description The LN4913 is an integrated hall-effect sensor designed specifically to meet the requirements of low-power devices. e.g. as an On/Off switch in Cellular Flip-Phones, with battery operating voltages of 1.65V-5.5V. Precise magnetic switching points and high temperature st

TEMPERATURE COMPENSATED ZENER REFERENCE DIODES

• TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • 12.8 VOLT NOMINAL ZENER VOLTAGE ± 5 • LOW NOISE • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION

TEMPERATURE COMPENSATED ZENER REFERENCE DIODES

• TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • 12.8 VOLT NOMINAL ZENER VOLTAGE ± 5 • LOW NOISE • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION

Thick Film Hybid Circuit 2-Channel 50W Min AF Power Amp(Dual-Supply)

Low Power Hall Switch

Features • Micro power design • 2.4 V to 5.5 V battery operation • High sensitivity and high stability of the magnetic switching points • High resistance to mechanical stress • Digital output signal • Switching for both poles of a magnet (omnipolar)

2W Monaural, 90mW Stereo Headphone Audio Amplifier

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