PLLatinum Dual Frequency Synthesizer System with Integrated VCOs

文件：237.78 Kbytes Page：17 Pages

PLLatinum Dual Frequency Synthesizer System with Integrated VCOs

PLLatinum Dual Frequency Synthesizer System with Integrated VCOs

文件：237.78 Kbytes Page：17 Pages

封装/外壳：24-WFQFN 裸露焊盘 功能：频率合成器 包装：卷带（TR） 描述：IC FREQ SYNTH DUAL W/VC0 24WQFN RF/IF，射频/中频和 RFID RF 其它 IC 和模块

PLLatinum Dual Frequency Synthesizer System with Integrated VCOs

文件：237.78 Kbytes Page：17 Pages

封装/外壳：24-WFQFN 裸露焊盘 功能：频率合成器 包装：卷带（TR） 描述：IC FREQ SYNTH DUAL VCO 24WQFN RF/IF，射频/中频和 RFID RF 其它 IC 和模块

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

Silicon Complementary Transistors High Current Switch

Features: • Low Collector–Emitter Saturation Voltage • High Current and High fT • Excellent Linearity of hFE • Fast Switching Time

Rectifier diodes schottky barrier

GENERAL DESCRIPTION Dual nickel silicide schottky barrier rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intended for use i