0.1 GHz to 2.0 GHz Low Noise Amplifier/Mixer for RF Personal Communications

文件：258.72 Kbytes Page：12 Pages

封装/外壳：16-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC AMP CELLUL 100MHZ-2GHZ 16SOIC RF/IF，射频/中频和 RFID 射频放大器

封装/外壳：16-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC AMP CELLUL 100MHZ-2GHZ 16SOIC RF/IF，射频/中频和 RFID 射频放大器

0.1 GHz to 2.0 GHz Low Noise Amplifier/Mixer for RF Personal Communications

文件：258.72 Kbytes Page：12 Pages

NPN SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar transistor For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing

NPN SILICON BIAS RESISTOR TRANSISTOR

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