型号 功能描述 生产厂家&企业 LOGO 操作
LMG3422R050

LMG342xR050600-V50-m廓GaNFETWithIntegratedDriver,Protection,andTemperatureReporting

1Features •QualifiedforJEDECJEP180forhard-switching topologies •600-VGaN-on-SiFETwithIntegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200-V/nsCMTI –3.6-MHzswitchingfrequency –20-V/nsto150-V/nsslewrateforoptimization ofswitchingperformanceand

TITexas Instruments

德州仪器美国德州仪器公司

TI
LMG3422R050

LMG342xR050600V50mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting

1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –3.6MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea

TI1Texas Instruments

德州仪器美国德州仪器公司

TI1
LMG3422R050

LMG342xR050600-V50-m廓GaNFETwithIntegratedDriver,Protection,andTemperatureReporting

文件:1.30859 Mbytes Page:36 Pages

TITexas Instruments

德州仪器美国德州仪器公司

TI

LMG342xR050600-V50-m廓GaNFETWithIntegratedDriver,Protection,andTemperatureReporting

1Features •QualifiedforJEDECJEP180forhard-switching topologies •600-VGaN-on-SiFETwithIntegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200-V/nsCMTI –3.6-MHzswitchingfrequency –20-V/nsto150-V/nsslewrateforoptimization ofswitchingperformanceand

TITexas Instruments

德州仪器美国德州仪器公司

TI

LMG342xR050600V50mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting

1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –3.6MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea

TI1Texas Instruments

德州仪器美国德州仪器公司

TI1

LMG342xR050600V50mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting

1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –3.6MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea

TI1Texas Instruments

德州仪器美国德州仪器公司

TI1

LMG342xR050600-V50-m廓GaNFETWithIntegratedDriver,Protection,andTemperatureReporting

1Features •QualifiedforJEDECJEP180forhard-switching topologies •600-VGaN-on-SiFETwithIntegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200-V/nsCMTI –3.6-MHzswitchingfrequency –20-V/nsto150-V/nsslewrateforoptimization ofswitchingperformanceand

TITexas Instruments

德州仪器美国德州仪器公司

TI

LMG342xR050600-V50-m廓GaNFETWithIntegratedDriver,Protection,andTemperatureReporting

1Features •QualifiedforJEDECJEP180forhard-switching topologies •600-VGaN-on-SiFETwithIntegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200-V/nsCMTI –3.6-MHzswitchingfrequency –20-V/nsto150-V/nsslewrateforoptimization ofswitchingperformanceand

TITexas Instruments

德州仪器美国德州仪器公司

TI

LMG342xR050600V50mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting

1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –3.6MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea

TI1Texas Instruments

德州仪器美国德州仪器公司

TI1

封装/外壳:54-VQFN 裸露焊盘 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:600-V 50-M GAN FET WITH INTEGRAT 集成电路(IC) 全半桥驱动器

TI2Texas Instruments

德州仪器美国德州仪器公司

TI2

封装/外壳:54-VQFN 裸露焊盘 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:600-V 50-M GAN FET WITH INTEGRAT 集成电路(IC) 全半桥驱动器

TI2Texas Instruments

德州仪器美国德州仪器公司

TI2
更新时间:2025-7-23 17:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI
23+
N/A
10000
原装优质现货订货渠道商
TI
22+
NA
22493
原装正品支持实单
TI
25+
(RQZ)
6000
原厂原装,价格优势
TI/德州仪器
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
24+
6000
全新原厂原装正品现货,低价出售,实单可谈
Texas Instruments
23+/24+
54-VQFN
8600
只供原装进口公司现货+可订货
TI德州仪器
22+
24000
原装正品现货,实单可谈,量大价优
TI/德州仪器
25+
原厂封装
10280
TI/德州仪器
25+
原厂封装
10280
TI/德州仪器
25+
原厂封装
9999

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