宽带载波电力线通信芯片

窄带高速电力线载波芯片

60V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM3460 is available in SOT-23S package. FEATURES  BV≥60V ID=3A RDS(ON) ≤90mΩ @ VGS=10V RDS(ON) ≤110mΩ @ VGS=5V  Advanced trench cell design  High speed switch  Available in SOT-23S Package APPLICATION  Portable appliances  Notebook/PC appliances  Power Manage

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO3460/L uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V, in the small SOT-23 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and lo

N-Channel MOSFET

■ Features ● VDS (V) = 60V ● ID = 0.65 A (VGS = 10V) ● RDS(ON)

Heyco® Original Series-35 Liquid Tight Cordgrips

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N-Channel 60V (D-S) MOSFET

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