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LMB价格
参考价格：￥0.7020
型号：LMB10S-TP 品牌：Micro 备注：这里有LMB多少钱，2024年最近7天走势，今日出价，今日竞价，LMB批发/采购报价，LMB行情走势销售排行榜，LMB报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
LMB | Multiple Case Sizes - High Voltage ??High Current 文件：428.3 Kbytes Page：7 Pages | ILLINOISCAPACITORIllinois Capacitor, Inc. 伊利诺斯伊利诺斯电容器股份有限公司 |  |   |
LMB | 包装：散装 描述：ACCY SUB MOUNT 3/8 RF/IF，射频/中频和 RFID RF 配件 | TE Connectivity Laird TE Connectivity Laird |  | |
LMB | 包装：散装 描述：LM MOUNTING HARDWARE ONLY, 3/4 H RF/IF，射频/中频和 RFID RF 配件 | pulse Pulse Electronics |  | |
1.0 Amp Single Phase Glass Passivated Bridge Rectifier 200 to 1000 Volts Features •LowProfile:Typicalheightof1.4mm •HighTemperatureSolderingGuaranteed:260°C/10Second •Highsurgecurrentcapability •Halogenfreeavailableuponrequestbyaddingsuffix-HF •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/Ro | MCCMicro Commercial Components 美微科美微科半导体公司 |  | | |
1.0 Amp Single Phase Glass Passivated Bridge Rectifier 200 to 1000 Volts Features •LowProfile:Typicalheightof1.4mm •HighTemperatureSolderingGuaranteed:260°C/10Second •Highsurgecurrentcapability •Halogenfreeavailableuponrequestbyaddingsuffix-HF •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/Ro | MCCMicro Commercial Components 美微科美微科半导体公司 | | | |
1.0 Amp Single Phase Glass Passivated Bridge Rectifier 200 to 800 Volts Features •LowProfile:Typicalheightof1.4mm •HighTemperatureSolderingGuaranteed:260°C/10Second •Highsurgecurrentcapability •Halogenfreeavailableuponrequestbyaddingsuffix-HF •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/Ro | MCCMicro Commercial Components 美微科美微科半导体公司 | | | |
1.0 Amp Single Phase Glass Passivated Bridge Rectifier 200 to 1000 Volts Features •LowProfile:Typicalheightof1.4mm •HighTemperatureSolderingGuaranteed:260°C/10Second •Highsurgecurrentcapability •Halogenfreeavailableuponrequestbyaddingsuffix-HF •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/Ro | MCCMicro Commercial Components 美微科美微科半导体公司 | | | |
1.0 Amp Single Phase Glass Passivated Bridge Rectifier 200 to 800 Volts Features •LowProfile:Typicalheightof1.4mm •HighTemperatureSolderingGuaranteed:260°C/10Second •Highsurgecurrentcapability •Halogenfreeavailableuponrequestbyaddingsuffix-HF •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/Ro | MCCMicro Commercial Components 美微科美微科半导体公司 | | | |
1.0 Amp Single Phase Glass Passivated Bridge Rectifier 200 to 800 Volts Features •LowProfile:Typicalheightof1.4mm •HighTemperatureSolderingGuaranteed:260°C/10Second •Highsurgecurrentcapability •Halogenfreeavailableuponrequestbyaddingsuffix-HF •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/Ro | MCCMicro Commercial Components 美微科美微科半导体公司 | | | |
1.0 Amp Single Phase Glass Passivated Bridge Rectifier 200 to 1000 Volts Features •LowProfile:Typicalheightof1.4mm •HighTemperatureSolderingGuaranteed:260°C/10Second •Highsurgecurrentcapability •Halogenfreeavailableuponrequestbyaddingsuffix-HF •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/Ro | MCCMicro Commercial Components 美微科美微科半导体公司 | | | |
1.0 Amp Single Phase Glass Passivated Bridge Rectifier 200 to 800 Volts Features •LowProfile:Typicalheightof1.4mm •HighTemperatureSolderingGuaranteed:260°C/10Second •Highsurgecurrentcapability •Halogenfreeavailableuponrequestbyaddingsuffix-HF •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/Ro | MCCMicro Commercial Components 美微科美微科半导体公司 | | | |
1.0 Amp Single Phase Glass Passivated Bridge Rectifier 200 to 800 Volts Features •LowProfile:Typicalheightof1.4mm •HighTemperatureSolderingGuaranteed:260°C/10Second •Highsurgecurrentcapability •Halogenfreeavailableuponrequestbyaddingsuffix-HF •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/Ro | MCCMicro Commercial Components 美微科美微科半导体公司 | | | |
1.0 Amp Single Phase Glass Passivated Bridge Rectifier 200 to 1000 Volts Features •LowProfile:Typicalheightof1.4mm •HighTemperatureSolderingGuaranteed:260°C/10Second •Highsurgecurrentcapability •Halogenfreeavailableuponrequestbyaddingsuffix-HF •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/Ro | MCCMicro Commercial Components 美微科美微科半导体公司 | | | |
1.0 Amp Single Phase Glass Passivated Bridge Rectifier 200 to 800 Volts Features •LowProfile:Typicalheightof1.4mm •HighTemperatureSolderingGuaranteed:260°C/10Second •Highsurgecurrentcapability •Halogenfreeavailableuponrequestbyaddingsuffix-HF •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/Ro | MCCMicro Commercial Components 美微科美微科半导体公司 | | | |
1.0 Amp Single Phase Glass Passivated Bridge Rectifier 200 to 800 Volts Features •LowProfile:Typicalheightof1.4mm •HighTemperatureSolderingGuaranteed:260°C/10Second •Highsurgecurrentcapability •Halogenfreeavailableuponrequestbyaddingsuffix-HF •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/Ro | MCCMicro Commercial Components 美微科美微科半导体公司 | | | |
1.0 Amp Single Phase Glass Passivated Bridge Rectifier 200 to 1000 Volts Features •LowProfile:Typicalheightof1.4mm •HighTemperatureSolderingGuaranteed:260°C/10Second •Highsurgecurrentcapability •Halogenfreeavailableuponrequestbyaddingsuffix-HF •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/Ro | MCCMicro Commercial Components 美微科美微科半导体公司 | | | |
1.0 Amp Single Phase Glass Passivated Bridge Rectifier 200 to 800 Volts Features •LowProfile:Typicalheightof1.4mm •HighTemperatureSolderingGuaranteed:260°C/10Second •Highsurgecurrentcapability •Halogenfreeavailableuponrequestbyaddingsuffix-HF •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/Ro | MCCMicro Commercial Components 美微科美微科半导体公司 | | | |
Monolithic Dual Switching Diode MonolithicDualSwitchingDiode | ZOWIEZOWIE 智威智威科技股份有限公司 |  | | |
Monolithic Dual Switching Diode MonolithicDualSwitchingDiode | ZOWIEZOWIE 智威智威科技股份有限公司 | | | |
Monolithic Dual Switching Diode MonolithicDualSwitchingDiode | ZOWIEZOWIE 智威智威科技股份有限公司 | | | |
Monolithic Dual Switching Diode MonolithicDualSwitchingDiode | ZOWIEZOWIE 智威智威科技股份有限公司 | | | |
HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE FEATURE ●FastSwitchingSpeed ●HighConductance ●HighReverseBreakdownVoltageRating ●Wedeclarethatthematerialofproduct compliancewithRoHSrequirements. | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 |  | | |
HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE FEATURE ●FastSwitchingSpeed ●HighConductance ●HighReverseBreakdownVoltageRating ●Wedeclarethatthematerialofproduct compliancewithRoHSrequirements. | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | | |
Switching Diode FETURE ●Wedeclarethatthematerialofproduct compliancewithRoHSrequirements. | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | | |
Monolithic Dual Switching Diode FEATURES ●Wedeclarethatthematerialofproductcompliancewith RoHSrequirementsandHalogenFree. ●S-prefixforautomotiveandotherapplicationsrequiring uniquesiteandcontrolchangerequirements;AEC-Q101 qualifiedandPPAPcapable. | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | | |
Dual Switching Diode DualSwitchingDiode ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesa Pb−FreeLeadFinish | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | | |
Dual Switching Diode DualSwitchingDiode ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesa Pb−FreeLeadFinish | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | | |
Dual Switching Diode FEATURES ●Wedeclarethatthematerialofproductcompliancewith RoHSrequirementsandHalogenFree. ●S-prefixforautomotiveandotherapplicationsrequiring uniquesiteandcontrolchangerequirements;AEC-Q101 qualifiedandPPAPcapable. | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 |  | | |
Dual Switching Diode FEATURES ●Wedeclarethatthematerialofproductcompliancewith RoHSrequirementsandHalogenFree. ●S-prefixforautomotiveandotherapplicationsrequiring uniquesiteandcontrolchangerequirements;AEC-Q101 qualifiedandPPAPcapable. | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | | | |
Dual Switching Diode FETURE ●Wedeclarethatthematerialofproduct compliancewithRoHSrequirements. | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | | |
High-Speed Switching DIODE Features ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesa Pb−FreeLeadFinish | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | | |
High-Speed Switching DIODE Features ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesa Pb−FreeLeadFinish | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | | |
HIGH-SPEED SWITCHING DIODE ●FEATURES 1)Wedeclarethatthematerialofproductcompliantwith RoHSrequirementsandHalogenFree. 2)S-PrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC-Q101 QualifiedandPPAPCapable. | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | | | |
Schottky Barrier Rectifiers Reverse Voltage 100V Forward Current 20A 1.FEATURES •Lowforwardvoltagedrop •Lowleakagecurrent •Lowpowerlosses,highefficiency •Highjunctiontemperaturecapability •Reducesconduction,reverseandswitchinglosses •Wedeclarethatthematerialofproductcomplieswith RoHSrequirementsandHalogenFree. | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | | |
Schottky Barrier Rectifiers Reverse Voltage 20 to 200V Forward Current 3.0A ReverseVoltage20to200VForwardCurrent3.0A FEATURES *PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 *Lowpowerloss,highefficiency *Foruseinlowvoltagehighfrequencyinverters,freewheeling,andpolarityprotectionapplications *Guardri | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | | |
Schottky Barrier Rectifiers Reverse Voltage 20 to 200V Forward Current 3.0A ReverseVoltage20to200VForwardCurrent3.0A FEATURES *PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 *Lowpowerloss,highefficiency *Foruseinlowvoltagehighfrequencyinverters,freewheeling,andpolarityprotectionapplications *Guardri | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | | |
Schottky Barrier Rectifiers Reverse Voltage 20 to 200V Forward Current 3.0A ReverseVoltage20to200VForwardCurrent3.0A FEATURES *PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 *Lowpowerloss,highefficiency *Foruseinlowvoltagehighfrequencyinverters,freewheeling,andpolarityprotectionapplications *Guardri | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | | |
Schottky Barrier Rectifiers Reverse Voltage 20 to 200V Forward Current 3.0A ReverseVoltage20to200VForwardCurrent3.0A FEATURES *PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 *Lowpowerloss,highefficiency *Foruseinlowvoltagehighfrequencyinverters,freewheeling,andpolarityprotectionapplications *Guardri | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | | |
Schottky Barrier Rectifiers Reverse Voltage 20 to 200V Forward Current 3.0A ReverseVoltage20to200VForwardCurrent3.0A FEATURES *PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 *Lowpowerloss,highefficiency *Foruseinlowvoltagehighfrequencyinverters,freewheeling,andpolarityprotectionapplications *Guardri | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | | |
Schottky Barrier Rectifiers Reverse Voltage 20 to 200V Forward Current 3.0A ReverseVoltage20to200VForwardCurrent3.0A FEATURES *PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 *Lowpowerloss,highefficiency *Foruseinlowvoltagehighfrequencyinverters,freewheeling,andpolarityprotectionapplications *Guardri | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | | |
Schottky Barrier Rectifiers Reverse Voltage 20 to 200V Forward Current 3.0A ReverseVoltage20to200VForwardCurrent3.0A FEATURES *PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 *Lowpowerloss,highefficiency *Foruseinlowvoltagehighfrequencyinverters,freewheeling,andpolarityprotectionapplications *Guardri | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | | |
Schottky Barrier Rectifiers Reverse Voltage 20 to 200V Forward Current 3.0A ReverseVoltage20to200VForwardCurrent3.0A FEATURES *PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 *Lowpowerloss,highefficiency *Foruseinlowvoltagehighfrequencyinverters,freewheeling,andpolarityprotectionapplications *Guardri | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | | |
Schottky Barrier Rectifiers Reverse Voltage 20 to 200V Forward Current 3.0A ReverseVoltage20to200VForwardCurrent3.0A FEATURES *PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 *Lowpowerloss,highefficiency *Foruseinlowvoltagehighfrequencyinverters,freewheeling,andpolarityprotectionapplications *Guardri | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | | |
Schottky Barrier Diode FEATURES ●Smallmoldtype. ●LowIR ●Highreliability. ●Wedeclarethatthematerialofproductcompliancewith RoHSrequirementsandHalogenFree. APPLICATIONS ●Lowcurrentrectification ●Siliconepitaxialplanar | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | | |
General Purpose Transistor GeneralPurposeTransistor NPNSilicon NPNSiliconThesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSC−89packagewhichisdesignedforlowpowersurfacemountapplications. Features •WedeclarethatthematerialofproductcompliancewithRoH | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | | |
General Purpose Transistor NPN Silicon FEATURES ●Wedeclarethatthematerialofproductcompliancewith RoHSrequirementsandHalogenFree. ●S-prefixforautomotiveandotherapplicationsrequiring uniquesiteandcontrolchangerequirements;AEC-Q101 qualifiedandPPAPcapable. | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | | |
General Purpose Transistor NPN Silicon FEATURES ●Wedeclarethatthematerialofproductcompliancewith RoHSrequirementsandHalogenFree. ●S-prefixforautomotiveandotherapplicationsrequiring uniquesiteandcontrolchangerequirements;AEC-Q101 qualifiedandPPAPcapable. | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | | |
General Purpose Transistor NPN Silicon FEATURES ●Wedeclarethatthematerialofproductcompliancewith RoHSrequirementsandHalogenFree. ●S-prefixforautomotiveandotherapplicationsrequiring uniquesiteandcontrolchangerequirements;AEC-Q101 qualifiedandPPAPcapable. | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | | |
General Purpose Transistors NPN Silicon FEATURES ●Wedeclarethatthematerialofproductcompliancewith RoHSrequirementsandHalogenFree. ●S-prefixforautomotiveandotherapplicationsrequiring uniquesiteandcontrolchangerequirements;AEC-Q101 qualifiedandPPAPcapable. | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | | |
General Purpose Transistors NPN Silicon FEATURES ●Wedeclarethatthematerialofproductcompliancewith RoHSrequirementsandHalogenFree. ●S-prefixforautomotiveandotherapplicationsrequiring uniquesiteandcontrolchangerequirements;AEC-Q101 qualifiedandPPAPcapable. | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | | |
General Purpose Transistors NPN Silicon FEATURES ●Wedeclarethatthematerialofproductcompliancewith RoHSrequirementsandHalogenFree. ●S-prefixforautomotiveandotherapplicationsrequiring uniquesiteandcontrolchangerequirements;AEC-Q101 qualifiedandPPAPcapable. | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | | |
Dual General Purpose Transistor Featrues ●WedeclarethatthematerialofproductcompliancewithRoHSrequirements. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable. | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | | |
General Purpose Transistor GeneralPurposeTransistor PNPSilicon •Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesa Pb−FreeLeadFinish | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | | |
General Purpose Transistor GeneralPurposeTransistor PNPSilicon •Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesa Pb−FreeLeadFinish | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | | |
General Purpose Transistor GeneralPurposeTransistor PNPSilicon FEATURE WedeclarethatthematerialofproductcompliancewithRoHSrequirements. S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable. | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | | |
General Purpose Transistors PNP Silicon FEATURES ●Wedeclarethatthematerialofproductcompliancewith RoHSrequirementsandHalogenFree. ●S-prefixforautomotiveandotherapplicationsrequiring uniquesiteandcontrolchangerequirements;AEC-Q101 qualifiedandPPAPcapable. | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | | |
General Purpose Transistors PNP Silicon FEATURES ●Wedeclarethatthematerialofproductcompliancewith RoHSrequirementsandHalogenFree. ●S-prefixforautomotiveandotherapplicationsrequiring uniquesiteandcontrolchangerequirements;AEC-Q101 qualifiedandPPAPcapable. | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | | |
General Purpose Transistors PNP Silicon FEATURES ●Wedeclarethatthematerialofproductcompliancewith RoHSrequirementsandHalogenFree. ●S-prefixforautomotiveandotherapplicationsrequiring uniquesiteandcontrolchangerequirements;AEC-Q101 qualifiedandPPAPcapable. | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | | |
General Purpose Transistor GeneralPurposeTransistor PNPSilicon •Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesa Pb−FreeLeadFinish | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | | |
General Purpose Transistor GeneralPurposeTransistor PNPSilicon •Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesa Pb−FreeLeadFinish | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | | |
LMB产品属性
- 类型
描述
- 型号
LMB
- 功能描述
ACCY SUB MOUNT 3/8
- RoHS
是
- 类别
RF/IF 和 RFID >> RF配件
- 系列
*
- 标准包装
1
- 系列
*
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONS |
22+23+ |
NA |
24600 |
绝对原装正品全新进口深圳现货 |
|||
LRC |
23+ |
SOD-123 |
6000 |
原装正品，支持实单 |
|||
MCC/美微科 |
1535+ |
3302 |
|||||
LRC |
23+ |
SOT-23 |
5000 |
||||
LRC |
SOT-23 |
6000 |
原装现货,长期供应,终端可账期 |
||||
ON/安森美 |
22+ |
SOT-23 |
9000 |
原装正品 |
|||
LRC/乐山 |
23+ |
SOT-23 |
20000 |
||||
23+ |
N/A |
49100 |
正品授权货源可靠 |
||||
LRC(乐山无线电) |
2335 |
SOT-23(SOT-23-3) |
50000 |
只做原装优势现货库存,渠道可追溯 |
|||
LRC |
3084 |
原装现货实单必成 只做原装！ |
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2020-8-31LM95245CIM/NOPB
LM95245CIM/NOPB，当天发货0755-82732291全新原装现货或门市自取.
2020-8-5LMC555CMX/NOPB原装现货
LMC555CMX/NOPB原装现货
2019-11-22LMBT4401LT1G
LMBT4401LT1G深圳市拓亿芯电子有限公司，本公司具备一般纳税人，可开13点增值税票，货源渠道保证原厂原装正品IC，诚信为本，薄利多销。
2019-10-16LM98714CCMTX公司原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-6-3LM98640W-MLS原装TI模拟前端–AFE
只做原装，假一罚十，可开16%增值税票。TE.NXP.ON.Renesas.Microchip.英飞凌.ALLEGRO
2019-3-25
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