LM5110价格
参考价格：￥5.5862
型号：LM5110-1M/NOPB 品牌：TI 备注：这里有LM5110多少钱，2026年最近7天走势，今日出价，今日竞价，LM5110批发/采购报价，LM5110行情走势销售排行榜，LM5110报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
LM5110 | LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 1 Features 1• Independently Drives Two N-Channel MOSFETs • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 5A sink/3A Source Current Capability • Two Channels can be Connected in Parallel to Double the Drive Current • Independent Inputs (TTL Compatible) • Fast Propagati | TI 德州仪器 |   | |
LM5110 | 具有 4V UVLO、专用输入接地和关断输入的 5A/3A 双通道栅极驱动器 The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each \"compound\" output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique char • Independently Drives Two N-Channel MOSFETs\n• Compound CMOS and Bipolar Outputs Reduce Output Current Variation\n• 5A sink/3A Source Current Capability\n• Two Channels can be Connected in Parallel to Double the Drive Current\n• Independent Inputs (TTL Compatible)\n• Fast Propagation Times (25-ns T; | TI 德州仪器 | | |
LM5110 | Dual 5A Compound Gate Driver with Negative Output Voltage Capability 文件：269.92 Kbytes Page：13 Pages | NSC 国半 | | |
LM5110 | LM5110 Dual 5A Compound Gate Driver with Negative Output Voltage Capability 文件：876.93 Kbytes Page：18 Pages | TI 德州仪器 | | |
LM5110 | Dual 5A Compound Gate Driver with Negative Output Voltage Capability 文件：960.51 Kbytes Page：20 Pages | TI 德州仪器 | | |
LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 1 Features 1• Independently Drives Two N-Channel MOSFETs • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 5A sink/3A Source Current Capability • Two Channels can be Connected in Parallel to Double the Drive Current • Independent Inputs (TTL Compatible) • Fast Propagati | TI 德州仪器 | | ||
LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 1 Features 1• Independently Drives Two N-Channel MOSFETs • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 5A sink/3A Source Current Capability • Two Channels can be Connected in Parallel to Double the Drive Current • Independent Inputs (TTL Compatible) • Fast Propagati | TI 德州仪器 | | ||
LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 1 Features 1• Independently Drives Two N-Channel MOSFETs • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 5A sink/3A Source Current Capability • Two Channels can be Connected in Parallel to Double the Drive Current • Independent Inputs (TTL Compatible) • Fast Propagati | TI 德州仪器 | | ||
LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 1 Features 1• Independently Drives Two N-Channel MOSFETs • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 5A sink/3A Source Current Capability • Two Channels can be Connected in Parallel to Double the Drive Current • Independent Inputs (TTL Compatible) • Fast Propagati | TI 德州仪器 | | ||
LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 1 Features 1• Independently Drives Two N-Channel MOSFETs • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 5A sink/3A Source Current Capability • Two Channels can be Connected in Parallel to Double the Drive Current • Independent Inputs (TTL Compatible) • Fast Propagati | TI 德州仪器 | | ||
LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 1 Features 1• Independently Drives Two N-Channel MOSFETs • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 5A sink/3A Source Current Capability • Two Channels can be Connected in Parallel to Double the Drive Current • Independent Inputs (TTL Compatible) • Fast Propagati | TI 德州仪器 | | ||
LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 1 Features 1• Independently Drives Two N-Channel MOSFETs • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 5A sink/3A Source Current Capability • Two Channels can be Connected in Parallel to Double the Drive Current • Independent Inputs (TTL Compatible) • Fast Propagati | TI 德州仪器 | | ||
LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 1 Features 1• Independently Drives Two N-Channel MOSFETs • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 5A sink/3A Source Current Capability • Two Channels can be Connected in Parallel to Double the Drive Current • Independent Inputs (TTL Compatible) • Fast Propagati | TI 德州仪器 | | ||
LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 1 Features 1• Independently Drives Two N-Channel MOSFETs • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 5A sink/3A Source Current Capability • Two Channels can be Connected in Parallel to Double the Drive Current • Independent Inputs (TTL Compatible) • Fast Propagati | TI 德州仪器 | | ||
LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 1 Features 1• Independently Drives Two N-Channel MOSFETs • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 5A sink/3A Source Current Capability • Two Channels can be Connected in Parallel to Double the Drive Current • Independent Inputs (TTL Compatible) • Fast Propagati | TI 德州仪器 | | ||
LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 1 Features 1• Independently Drives Two N-Channel MOSFETs • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 5A sink/3A Source Current Capability • Two Channels can be Connected in Parallel to Double the Drive Current • Independent Inputs (TTL Compatible) • Fast Propagati | TI 德州仪器 | | ||
LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 1 Features 1• Independently Drives Two N-Channel MOSFETs • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 5A sink/3A Source Current Capability • Two Channels can be Connected in Parallel to Double the Drive Current • Independent Inputs (TTL Compatible) • Fast Propagati | TI 德州仪器 | | ||
LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 1 Features 1• Independently Drives Two N-Channel MOSFETs • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 5A sink/3A Source Current Capability • Two Channels can be Connected in Parallel to Double the Drive Current • Independent Inputs (TTL Compatible) • Fast Propagati | TI 德州仪器 | | ||
LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 1 Features 1• Independently Drives Two N-Channel MOSFETs • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 5A sink/3A Source Current Capability • Two Channels can be Connected in Parallel to Double the Drive Current • Independent Inputs (TTL Compatible) • Fast Propagati | TI 德州仪器 | | ||
LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 1 Features 1• Independently Drives Two N-Channel MOSFETs • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 5A sink/3A Source Current Capability • Two Channels can be Connected in Parallel to Double the Drive Current • Independent Inputs (TTL Compatible) • Fast Propagati | TI 德州仪器 | | ||
LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 1 Features 1• Independently Drives Two N-Channel MOSFETs • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 5A sink/3A Source Current Capability • Two Channels can be Connected in Parallel to Double the Drive Current • Independent Inputs (TTL Compatible) • Fast Propagati | TI 德州仪器 | | ||
LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 1 Features 1• Independently Drives Two N-Channel MOSFETs • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 5A sink/3A Source Current Capability • Two Channels can be Connected in Parallel to Double the Drive Current • Independent Inputs (TTL Compatible) • Fast Propagati | TI 德州仪器 | | ||
LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 1 Features 1• Independently Drives Two N-Channel MOSFETs • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 5A sink/3A Source Current Capability • Two Channels can be Connected in Parallel to Double the Drive Current • Independent Inputs (TTL Compatible) • Fast Propagati | TI 德州仪器 | | ||
LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 1 Features 1• Independently Drives Two N-Channel MOSFETs • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 5A sink/3A Source Current Capability • Two Channels can be Connected in Parallel to Double the Drive Current • Independent Inputs (TTL Compatible) • Fast Propagati | TI 德州仪器 | | ||
LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 1 Features 1• Independently Drives Two N-Channel MOSFETs • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 5A sink/3A Source Current Capability • Two Channels can be Connected in Parallel to Double the Drive Current • Independent Inputs (TTL Compatible) • Fast Propagati | TI 德州仪器 | | ||
LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 1 Features 1• Independently Drives Two N-Channel MOSFETs • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 5A sink/3A Source Current Capability • Two Channels can be Connected in Parallel to Double the Drive Current • Independent Inputs (TTL Compatible) • Fast Propagati | TI 德州仪器 | | ||
LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 1 Features 1• Independently Drives Two N-Channel MOSFETs • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 5A sink/3A Source Current Capability • Two Channels can be Connected in Parallel to Double the Drive Current • Independent Inputs (TTL Compatible) • Fast Propagati | TI 德州仪器 | | ||
LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 1 Features 1• Independently Drives Two N-Channel MOSFETs • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 5A sink/3A Source Current Capability • Two Channels can be Connected in Parallel to Double the Drive Current • Independent Inputs (TTL Compatible) • Fast Propagati | TI 德州仪器 | | ||
LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 1 Features 1• Independently Drives Two N-Channel MOSFETs • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 5A sink/3A Source Current Capability • Two Channels can be Connected in Parallel to Double the Drive Current • Independent Inputs (TTL Compatible) • Fast Propagati | TI 德州仪器 | | ||
LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 1 Features 1• Independently Drives Two N-Channel MOSFETs • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 5A sink/3A Source Current Capability • Two Channels can be Connected in Parallel to Double the Drive Current • Independent Inputs (TTL Compatible) • Fast Propagati | TI 德州仪器 | | ||
LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 1 Features 1• Independently Drives Two N-Channel MOSFETs • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 5A sink/3A Source Current Capability • Two Channels can be Connected in Parallel to Double the Drive Current • Independent Inputs (TTL Compatible) • Fast Propagati | TI 德州仪器 | | ||
LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 1 Features 1• Independently Drives Two N-Channel MOSFETs • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 5A sink/3A Source Current Capability • Two Channels can be Connected in Parallel to Double the Drive Current • Independent Inputs (TTL Compatible) • Fast Propagati | TI 德州仪器 | | ||
LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 1 Features 1• Independently Drives Two N-Channel MOSFETs • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 5A sink/3A Source Current Capability • Two Channels can be Connected in Parallel to Double the Drive Current • Independent Inputs (TTL Compatible) • Fast Propagati | TI 德州仪器 | | ||
LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 1 Features 1• Independently Drives Two N-Channel MOSFETs • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 5A sink/3A Source Current Capability • Two Channels can be Connected in Parallel to Double the Drive Current • Independent Inputs (TTL Compatible) • Fast Propagati | TI 德州仪器 | | ||
LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 1 Features 1• Independently Drives Two N-Channel MOSFETs • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 5A sink/3A Source Current Capability • Two Channels can be Connected in Parallel to Double the Drive Current • Independent Inputs (TTL Compatible) • Fast Propagati | TI 德州仪器 | | ||
LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 1 Features 1• Independently Drives Two N-Channel MOSFETs • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 5A sink/3A Source Current Capability • Two Channels can be Connected in Parallel to Double the Drive Current • Independent Inputs (TTL Compatible) • Fast Propagati | TI 德州仪器 | | ||
Dual 5A Compound Gate Driver with Negative Output Voltage Capability 文件：960.51 Kbytes Page：20 Pages | TI 德州仪器 | | ||
LM5110 Dual 5A Compound Gate Driver with Negative Output Voltage Capability 文件：876.93 Kbytes Page：18 Pages | TI 德州仪器 | | ||
Dual 5A Compound Gate Driver with Negative Output Voltage Capability 文件：269.92 Kbytes Page：13 Pages | NSC 国半 | | ||
封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC GATE DRVR LOW-SIDE 8SOIC 集成电路（IC） 栅极驱动器 | TI 德州仪器 | | ||
Dual 5A Compound Gate Driver with Negative Output Voltage Capability 文件：960.51 Kbytes Page：20 Pages | TI 德州仪器 | | ||
Dual 5A Compound Gate Driver with Negative Output Voltage Capability 文件：960.51 Kbytes Page：20 Pages | TI 德州仪器 | | ||
LM5110 Dual 5A Compound Gate Driver with Negative Output Voltage Capability 文件：876.93 Kbytes Page：18 Pages | TI 德州仪器 | | ||
Dual 5A Compound Gate Driver with Negative Output Voltage Capability 文件：269.92 Kbytes Page：13 Pages | NSC 国半 | | ||
封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE DRVR LOW-SIDE 8SOIC 集成电路（IC） 栅极驱动器 | TI 德州仪器 | | ||
Dual 5A Compound Gate Driver with Negative Output Voltage Capability 文件：960.51 Kbytes Page：20 Pages | TI 德州仪器 | | ||
Dual 5A Compound Gate Driver with Negative Output Voltage Capability 文件：960.51 Kbytes Page：20 Pages | TI 德州仪器 | | ||
LM5110 Dual 5A Compound Gate Driver with Negative Output Voltage Capability 文件：876.93 Kbytes Page：18 Pages | TI 德州仪器 | | ||
Dual 5A Compound Gate Driver with Negative Output Voltage Capability 文件：269.92 Kbytes Page：13 Pages | NSC 国半 | | ||
Dual 5A Compound Gate Driver with Negative Output Voltage Capability 文件：960.51 Kbytes Page：20 Pages | TI 德州仪器 | | ||
Dual 5A Compound Gate Driver with Negative Output Voltage Capability 文件：960.51 Kbytes Page：20 Pages | TI 德州仪器 | | ||
Dual 5A Compound Gate Driver with Negative Output Voltage Capability 文件：960.51 Kbytes Page：20 Pages | TI 德州仪器 | | ||
LM5110 Dual 5A Compound Gate Driver with Negative Output Voltage Capability 文件：876.93 Kbytes Page：18 Pages | TI 德州仪器 | | ||
Dual 5A Compound Gate Driver with Negative Output Voltage Capability 文件：269.92 Kbytes Page：13 Pages | NSC 国半 | | ||
Dual 5A Compound Gate Driver with Negative Output Voltage Capability 文件：960.51 Kbytes Page：20 Pages | TI 德州仪器 | | ||
Dual 5A Compound Gate Driver with Negative Output Voltage Capability 文件：960.51 Kbytes Page：20 Pages | TI 德州仪器 | | ||
LM5110 Dual 5A Compound Gate Driver with Negative Output Voltage Capability 文件：876.93 Kbytes Page：18 Pages | TI 德州仪器 | | ||
Dual 5A Compound Gate Driver with Negative Output Voltage Capability 文件：269.92 Kbytes Page：13 Pages | NSC 国半 | | ||
Dual 5A Compound Gate Driver with Negative Output Voltage Capability 文件：960.51 Kbytes Page：20 Pages | TI 德州仪器 | | ||
Dual 5A Compound Gate Driver with Negative Output Voltage Capability 文件：960.51 Kbytes Page：20 Pages | TI 德州仪器 | |
LM5110产品属性
- 类型
描述
- Power switch：
MOSFET
- Peak output current (A)：
5
- Input VCC (Min) (V)：
3.5
- Input VCC (Max) (V)：
14
- Features：
Negative Output Voltage Capability
- Operating temperature range (C)：
-40 to 125
- Rise time (ns)：
14
- Fall time (ns)：
12
- Prop delay (ns)：
25
- Input threshold：
TTL
- Channel input logic：
Inverting
- Input negative voltage (V)：
0
- Rating：
Catalog
- Undervoltage lockout (Typ)：
224
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
24+ |
SOP-8 |
7850 |
只做原装正品现货或订货假一赔十! |
|||
TI/德州仪器 |
25+ |
SOIC-8 |
2250 |
强势库存!绝对原装公司现货! |
|||
TI/德州仪器 |
2025+ |
SOIC |
3000 |
原装进口价格优 请找坤融电子! |
|||
NATIONALS |
2023+ |
SOP-8 |
53500 |
正品,原装现货 |
|||
TI |
25+ |
SO8 |
18798 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
TI/德州仪器 |
25+ |
SOP-8 |
12496 |
TI/德州仪器原装正品LM5110-1MX即刻询购立享优惠#长期有货 |
|||
TI |
1902+ |
SOP8 |
341 |
全新原装公司现货
|
|||
NS |
26+ |
SOP-8 |
7550 |
绝对原装现货,价格低,欢迎询购! |
|||
TI(德州仪器) |
25 |
SOIC-8 |
2718 |
QQ询价 绝对原装正品 |
|||
TI/德州仪器 |
2021+ |
SOP-8 |
9000 |
原装现货,随时欢迎询价 |
LM5110规格书下载地址
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LM5110数据表相关新闻
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LM4911LD TI/NS 19+ 5600 LM3658SD-A TI 19+ 5600 LM4811LDX TI/NS 19+ 5600 LM4970SDX TI/NS 19+ 5600 LM95234CISDX TI/NS 19+ 5600 LP3905SDX-A3 TI/NS 19+ 5600 LM26400YSDE TI 19+ 5600 LMH0384SQE TI 19+ 5600 LMH0394SQE TI 19+ 5600 LM27402SQX TI 19+ 5600 LMH0074SQE/NOPB TI 19+ 5600 LM4674TLX/NOPB
2019-9-6
DdatasheetPDF页码索引
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