High Voltage Transistor Array

General Description\nThe LM3146 consists of five high voltage general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially-connected pair. The transistors are well suited to a wide variety of applications in low po ■ High voltage matched pairs of transistors, VBE matched\n   ±5 mV, input offset current 2 mA max at IC e 1 mA\n■ Five general purpose monolithic transistors\n■ Operation from dc to 120 MHz\n■ Wide operating current range\n■ Low noise figure 3.2 dB typ at 1 kHzApplications\n■ General use in all type;

LM3146 High Voltage Transistor Array

文件：151.73 Kbytes Page：6 Pages

LM3146 High Voltage Transistor Array

文件：151.73 Kbytes Page：6 Pages

LM3146 High Voltage Transistor Array

文件：151.73 Kbytes Page：6 Pages

High-Voltage Transistor Arrays

High-Voltage Transistor Arrays The CA3146A, CA3146, CA3183A, and CA3183 are general purpose high voltage silicon NPN transistor arrays on a common monolithic substrate. Types CA3146A and CA3146 consist of five transistors with two of the transistors connected to form a differentially connected p

High-Voltage Transistor Arrays

High-Voltage Transistor Arrays The CA3146A, CA3146, CA3183A, and CA3183 are general purpose high voltage silicon NPN transistor arrays on a common monolithic substrate. Types CA3146A and CA3146 consist of five transistors with two of the transistors connected to form a differentially connected p

High-Voltage Transistor Arrays

High-Voltage Transistor Arrays The CA3146A, CA3146, CA3183A, and CA3183 are general purpose high voltage silicon NPN transistor arrays on a common monolithic substrate. Types CA3146A and CA3146 consist of five transistors with two of the transistors connected to form a differentially connected p