LM258W价格
参考价格：￥0.7371
型号：LM258WDT 品牌：STMicroelectronics 备注：这里有LM258W多少钱，2026年最近7天走势，今日出价，今日竞价，LM258W批发/采购报价，LM258W行情走势销售排行榜，LM258W报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
LM258W | 低功耗双运算放大器 The LM158W, LM258W, and LM358W circuits consist of two independent, high-gain, operational amplifiers (op-amps), which employ an internal frequency compensation and are specifically designed to operate from a single power supply over a wide range of voltages. The low-power supply drain is independen • ESD internal protection: 2 kV \n• Internal frequency compensation implemented \n• Large DC voltage gain: 100 dB \n• Wide bandwidth (unity gain): 1.1 MHz (temperature compensated) \n• Very low supply current per operator -essentially independent of supply voltage \n• Low input bias current: 20 nA (; | STMICROELECTRONICS 意法半导体 |   | |
LM258W | Low power dual operational amplifiers 文件：326.23 Kbytes Page：18 Pages | STMICROELECTRONICS 意法半导体 | | |
Low power dual operational amplifiers Description These circuits consist of two independent, high gain, internally frequency-compensated which were designed specifically to operate from a single power supply over a wide range of voltages. The low power supply drain is independent of the magnitude of the power supply voltage. App | STMICROELECTRONICS 意法半导体 | | ||
Low power dual operational amplifiers Description These circuits consist of two independent, high gain, internally frequency-compensated which were designed specifically to operate from a single power supply over a wide range of voltages. The low power supply drain is independent of the magnitude of the power supply voltage. App | STMICROELECTRONICS 意法半导体 | | ||
Low power dual operational amplifiers Description These circuits consist of two independent, high gain, internally frequency-compensated which were designed specifically to operate from a single power supply over a wide range of voltages. The low power supply drain is independent of the magnitude of the power supply voltage. App | STMICROELECTRONICS 意法半导体 | | ||
Low power dual operational amplifiers Description These circuits consist of two independent, high gain, internally frequency-compensated which were designed specifically to operate from a single power supply over a wide range of voltages. The low power supply drain is independent of the magnitude of the power supply voltage. App | STMICROELECTRONICS 意法半导体 | | ||
Low power dual operational amplifiers Description These circuits consist of two independent, high gain, internally frequency-compensated which were designed specifically to operate from a single power supply over a wide range of voltages. The low power supply drain is independent of the magnitude of the power supply voltage. App | STMICROELECTRONICS 意法半导体 | | ||
Low power dual operational amplifiers Description These circuits consist of two independent, high gain, internally frequency-compensated which were designed specifically to operate from a single power supply over a wide range of voltages. The low power supply drain is independent of the magnitude of the power supply voltage. App | STMICROELECTRONICS 意法半导体 | | ||
Low power dual operational amplifiers Description These circuits consist of two independent, high gain, internally frequency-compensated which were designed specifically to operate from a single power supply over a wide range of voltages. The low power supply drain is independent of the magnitude of the power supply voltage. App | STMICROELECTRONICS 意法半导体 | | ||
Low power dual operational amplifiers Description These circuits consist of two independent, high gain, internally frequency-compensated which were designed specifically to operate from a single power supply over a wide range of voltages. The low power supply drain is independent of the magnitude of the power supply voltage. App | STMICROELECTRONICS 意法半导体 | | ||
Low power dual operational amplifiers 文件：326.23 Kbytes Page：18 Pages | STMICROELECTRONICS 意法半导体 | | ||
Low power dual operational amplifiers 文件：326.23 Kbytes Page：18 Pages | STMICROELECTRONICS 意法半导体 | | ||
Low power dual operational amplifiers 文件：326.23 Kbytes Page：18 Pages | STMICROELECTRONICS 意法半导体 | | ||
Low power dual operational amplifiers 文件：326.23 Kbytes Page：18 Pages | STMICROELECTRONICS 意法半导体 | | ||
Low power dual operational amplifiers 文件：326.23 Kbytes Page：18 Pages | STMICROELECTRONICS 意法半导体 | | ||
Low power dual operational amplifiers 文件：326.23 Kbytes Page：18 Pages | STMICROELECTRONICS 意法半导体 | | ||
Low power dual operational amplifiers 文件：326.23 Kbytes Page：18 Pages | STMICROELECTRONICS 意法半导体 | | ||
Low power dual operational amplifiers 文件：326.23 Kbytes Page：18 Pages | STMICROELECTRONICS 意法半导体 | | ||
Low power dual operational amplifiers 文件：326.23 Kbytes Page：18 Pages | STMICROELECTRONICS 意法半导体 | | ||
DUAL DIFFERENTIAL INPUT OPERATIONAL AMPLIFIERS Utilizing the circuit designs perfected for Quad Operational Amplifiers, these dual operational amplifiers feature low power drain, a common mode input voltage range extending to ground/VEE, and single supply or split supply operation. The LM358 series is equivalent to one−half of an LM324. These | ONSEMI 安森美半导体 | | ||
DUAL DIFFERENTIAL INPUT OPERATIONAL AMPLIFIERS Dual Low Power Operational Amplifiers Utilizing the circuit designs perfected for recently introduced Quad Operational Amplifiers, these dual operational amplifiers feature 1) low power drain, 2) a common mode input voltage range extending to ground/VEE, 3) single supply or split supply operation | MOTOROLA 摩托罗拉 | | ||
Low power dual operational amplifi DESCRIPTION The 532/358/LM2904 consists of two independent, high gain, internally frequency-compensated operational amplifiers internally frequency-compensated operational amplifiers designed specifically to operate from a single power supply over a wide range of voltages. Operation from dual pow | PHILIPS 飞利浦 | | ||
DUAL DIFFERENTIAL INPUT OPERATIONAL AMPLIFIERS Dual Low Power Operational Amplifiers Utilizing the circuit designs perfected for recently introduced Quad Operational Amplifiers, these dual operational amplifiers feature 1) low power drain, 2) a common mode input voltage range extending to ground/VEE, 3) single supply or split supply operation | MOTOROLA 摩托罗拉 | | ||
Thyristors logic level GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger | PHILIPS 飞利浦 | |
LM258W产品属性
- 类型
描述
- Marketing Status：
Active
- Package：
SO-8
- Grade：
Automotive
- Number of Channels：
2
- Operating Temperature_min(°C)：
-40
- Operating Temperature_max(°C)：
105
- Supply Current per Channel_typ(µA)：
350
- Supply Current per Channel_max(µA)：
600
- Supply Voltage_min(V)：
3
- Supply Voltage_max(V)：
32
- Input Offset Voltage_max(mV)：
5
- Input Bias Current_max(pA)：
150000
- Gain Bandwidth Product_typ(MHz)：
1.1
- Slew Rate_typ(V/µs)：
0.6
- Output Current_typ(mA)：
40
- Rail to Rail Input：
false
- Rail to Rail Output：
false
- Input Equivalent Noise Voltage_typ(nV/√ Hz)：
55
- Unit Price (US$)：
0.157
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STM |
2016+ |
TSSOP |
8000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ST |
23+ |
SOP8 |
20000 |
全新原装假一赔十 |
|||
ST/意法半导体 |
25+ |
TSSOP-8 |
20000 |
公司只有正品,实单可谈 |
|||
ST/意法 |
25+ |
SOP8 |
32360 |
ST/意法全新特价LM258WDT即刻询购立享优惠#长期有货 |
|||
ST/意法半导体 |
22+ |
TSSOP-8 |
6001 |
原装正品现货 可开增值税发票 |
|||
ST/意法 |
2450+ |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
||||
STMICROELECTRONICS |
24+ |
N/A |
490079 |
原装原装原装 |
|||
ST |
SOP8 |
9425 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ST |
25+ |
SOP8 |
20000 |
原装，请咨询 |
|||
STMicroelectronics |
18+ |
ICOPAMPDUALLP8SOIC |
6580 |
公司原装现货 |
LM258W规格书下载地址
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DdatasheetPDF页码索引
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