SILICON BIDIRECTIONAL DIAC

FEATURES • The three-layer, two-terminal, axial-lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. The breakover symmetry is within three volts(DB3,DC34,DB4) or fou

SILICON BIDIRECTIONAL DIAC

FEATURES • The three-layer, two-terminal, axial-lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. The breakover symmetry is within three volts(DB3,DC34,DB4) or fou

SILICON BIDIRECTIONAL DIAC

FEATURES • The three-layer, two-terminal, axial-lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. The breakover symmetry is within three volts(DB3,DC34,DB4) or four

SILICON BIDIRECTIONAL DIAC

Features ● The glass passivated, three-layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. The breakover symmetry is within four volts with

Surface mount Bidirectional trigger diode

SILICON BIDIRECTIONAL DIAC

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