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LLDB3价格
参考价格:¥0.4439
型号:LLDB3 品牌:Taiwan Semi 备注:这里有LLDB3多少钱,2025年最近7天走势,今日出价,今日竞价,LLDB3批发/采购报价,LLDB3行情走势销售排行榜,LLDB3报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 | 
|---|---|---|---|---|
LLDB3  | 150mW Bi-directional Trigger Diode FEATURES - Surface mounted device - Hermetically sealed glass - Matte Tin(Sn) terminal finish - All external surfaces are corrosion resistant and terminals are readily solderable  | TSC 台湾半导体  | ||
LLDB3  | SILICON BIDIRECTIONAL DIAC FEATURES • The three-layer, two-terminal, axial-lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. The breakover symmetry is within three volts(DB3,DC34,DB4) or fou  | JINANJINGHENG 晶恒集团  | ||
LLDB3  | SILICON BIDIRECTIONAL DIACS The glass passivated, three-layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover curren at breakover voltage as theywithstand peak pulse current. The breakover symmetry is withinfour volts with a typical b  | SEMTECH_ELEC 先之科半导体  | ||
LLDB3  | SILICON BIDIRECTIONAL DIAC Features • Breakover Voltage: 32V • Breakover Voltage Range: 28V to 36V • Lead Free Finish/RoHS Compliant(Note 3) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1  | MCC  | ||
LLDB3  | LL-34 Hermetically Sealed Glass BI-directional Trigger Diode Specification Features: ■ VBO = 32V ■ LL-34 (Mini-MELF) Package ■ Surface Device Type Mounting ■ Hermetically Sealed Glass ■ Compression Bonded Construction ■ All External Surfaces Are Corrosion Resistant And Terminals Are Readily Solderable ■ RoHS Compliant ■ Matte Tin (Sn) Terminal Finis  | TAK_CHEONG 德昌电子  | ||
LLDB3  | SILICON BIDIRECTIONAL DIACS FEATURES The three layer,two termnal,axial lead,hermetically sealed diacs are designed specifically for triggering thyristors.They demonstrate low breakover current at breakover voltage as they withstand peak pulse current,The breakover symmetry is within three volts(LLDB3,LLDB4). These diacs  | DSK  | ||
LLDB3  | SILICON BIDIRECTIONAL DIAC FEATURES • The three-layer, two-terminal, axial-lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. The breakover symmetry is within three volts(DB3,DC34,DB4) or fou  | JINGHENG 晶恒  | ||
LLDB3  | SILICON BIDIRECTIONAL DIAC FEATURES • The three-layer, two-terminal, axial-lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. The breakover symmetry is within three volts(DB3,DC34,DB4) or four  | NIUHANG 纽航电子  | ||
LLDB3  | SILICON BIDIRECTIONAL DIAC FEATURES • The three-layer, two-terminal, axial-lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. The breakover symmetry is within three volts(DB3,DC34,DB4) or four  | GXELECTRONICS 星合电子  | ||
LLDB3  | BIDIRECTIONAL TRIGGER DIODE Features ● VBO : 32V ● Breakover voltage range : 28 to 36V Applications Functioning as a trigger diode with a fixed voltage reference, the DB3 can be used in conjunction with triacs for simplified gate control circuits or as a starting element in fluorescent lamp ballasts.  | DIOTECH  | ||
LLDB3  | Glass Case MiniMELF Features The three layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current, The breakover symmetry is within three volts (DB3,DB4). These dia  | OLITECH 奥力特  | ||
LLDB3  | SILICON BIDIRECTIONAL DIAC Features ● The glass passivated, three-layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. The breakover symmetry is within four volts with  | SUNMATE 森美特  | ||
LLDB3  | MINI MELF Glass-Encapsulate Diodes Silicon bidirectional diac Features ● VBO 28V-45V  | HDSEMI 海德半导体  | ||
LLDB3  | SILICON BIDIRECTIONAL DIACS Features The three layer, two terminal, axial lead,hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current, The breakover symmetry is within three volts (DB3,DB4). These diac  | ZSELEC 淄博圣诺  | ||
LLDB3  | DIAC Features 1. VBO: 32V 2. Breakover voltage range: 28 to 36V Applications Functioning as a trigger diode with a fixed voltage reference, the LLDB3 can be used in conjunction with triacs for simplified gate control circuits or as a starting element in fluorescent lamp ballasts.  | WINNERJOIN 永而佳  | ||
LLDB3  | 150mW Bi-directional Trigger Diode Features ◇ Surface device type mounting. ◇ Hermetically Sealed Glass. ◇ Matte Tin(Sn) Terminal Finish ◇ Pb free version and RoHS compliant ◇ All external suface are corrosion resistant and terminals are readily solderable.  | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司  | ||
LLDB3  | DIAC Features 1. VBO: 32V 2. Breakover voltage range: 28 to 36V Applications Functioning as a trigger diode with a fixed voltage reference, the LLDB3 can be used in conjunction with triacs for simplified gate control circuits or as a starting element in fluorescent lamp ballasts.  | FORMOSA 美丽微半导体  | ||
LLDB3  | ZENER DIODES 150mW BI-DIRECTIONAL TRIGGER DIODE DESCRIPTION The LLDB3 is available in LL 34 p ackage FEATURES  S urface device type mounting  Hermetically Sealed Glass  Matte Tin (Sn) Terminal Finish  AII external surfaces are corrosion resistant and terminals are readily solderable.  Availabl e in LL 34 p a ckage MECHANICAL  | AITSEMI 创瑞科技  | ||
LLDB3  | SILICON BIDIRECTIONAL DIAC Features Breakover Voltage: 32V Breakover Voltage Range: 28V to 36V Lead Free Finish/RoHS Compliant(Note 3) (P Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1  | SY 顺烨电子  | ||
LLDB3  | SILICON BIDIRECTIONAL DIAC FEATURES The three layer,two termnal,hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low break over current at break over voltage as they withstand peak pulse current, The breakover symmetry is within three volts(DB6). These diacs are intended  | SY 顺烨电子  | ||
LLDB3  | 触发二极管  | STMICROELECTRONICS 意法半导体  | ||
LLDB3  | TRIGGER DIODES 文件:179.56 Kbytes Page:4 Pages  | RECTRON 丽正国际  | ||
LLDB3  | SILICON BI-DIRECTIONAL DIACS 文件:98.17 Kbytes Page:1 Pages  | EIC  | ||
LLDB3  | Silicon Bidirectional Trigger Diodes 文件:166.72 Kbytes Page:2 Pages  | BYTESONIC 松浩电子  | ||
LLDB3  | SILICON BIDIRECTIONAL DIAC 文件:50.16 Kbytes Page:2 Pages  | JINANJINGHENG 晶恒集团  | ||
LLDB3  | 150mW Bi-directional Trigger Diode 文件:171.6 Kbytes Page:5 Pages  | TSC 台湾半导体  | ||
LLDB3  | SILICON BIDIRECTIONAL DIAC 文件:384.64 Kbytes Page:3 Pages  | MCC  | ||
SILICON BIDIRECTIONAL DIAC FEATURES The three layer,two termnal,hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low break over current at break over voltage as they withstand peak pulse current, The breakover symmetry is within three volts(DB6). These diacs are intended  | SY 顺烨电子  | |||
150mW Bi-directional Trigger Diode FEATURES - Surface mounted device - Hermetically sealed glass - Matte Tin(Sn) terminal finish - All external surfaces are corrosion resistant and terminals are readily solderable  | TSC 台湾半导体  | |||
150mW Bi-directional Trigger Diode Features ◇ Surface device type mounting. ◇ Hermetically Sealed Glass. ◇ Matte Tin(Sn) Terminal Finish ◇ Pb free version and RoHS compliant ◇ All external suface are corrosion resistant and terminals are readily solderable.  | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司  | |||
150mW Bi-directional Trigger Diode FEATURES - Surface mounted device - Hermetically sealed glass - Matte Tin(Sn) terminal finish - All external surfaces are corrosion resistant and terminals are readily solderable  | TSC 台湾半导体  | |||
150mW Bi-directional Trigger Diode FEATURES - Surface mounted device - Hermetically sealed glass - Matte Tin(Sn) terminal finish - All external surfaces are corrosion resistant and terminals are readily solderable  | TSC 台湾半导体  | |||
SILICON SILICON BIDIRECTIONAL DIAC Features • Breakover Voltage: 32V • Breakover Voltage Range: 28V to 36V • Lead Free Finish/RoHS Compliant(Note 3) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1  | MCC  | |||
150mW Bi-directional Trigger Diode 文件:200.77 Kbytes Page:3 Pages  | TSC 台湾半导体  | |||
SILICON BIDIRECTIONAL DIAC 文件:384.64 Kbytes Page:3 Pages  | MCC  | |||
150mW Bi-directional Trigger Diode 文件:171.6 Kbytes Page:5 Pages  | TSC 台湾半导体  | |||
SILICON BIDIRECTIONAL DIAC 文件:50.16 Kbytes Page:2 Pages  | JINANJINGHENG 晶恒集团  | |||
150mW Bi-directional Trigger Diode 文件:200.77 Kbytes Page:3 Pages  | TSC 台湾半导体  | |||
150mW Bi-directional Trigger Diode 文件:200.77 Kbytes Page:3 Pages  | TSC 台湾半导体  | |||
150mW Bi-directional Trigger Diode 文件:171.6 Kbytes Page:5 Pages  | TSC 台湾半导体  | |||
150mW Bi-directional Trigger Diode 文件:171.6 Kbytes Page:5 Pages  | TSC 台湾半导体  | |||
TRIGGER DIODES 文件:179.56 Kbytes Page:4 Pages  | RECTRON 丽正国际  | |||
Discrete Devices-DIAC & Thyristor-DIAC (Trigger Diode)  | TSC 台湾半导体  | |||
150mW Bi-directional Trigger Diode 文件:171.6 Kbytes Page:5 Pages  | TSC 台湾半导体  | |||
150mW Bi-directional Trigger Diode 文件:200.77 Kbytes Page:3 Pages  | TSC 台湾半导体  | |||
150mW Bi-directional Trigger Diode 文件:200.77 Kbytes Page:3 Pages  | TSC 台湾半导体  | |||
SILICON SILICON BIDIRECTIONAL DIAC  | MCC  | |||
封装/外壳:DO-213AC,MINI-MELF,SOD-80 包装:散装 描述:DIAC 28-36V 2A MINIMELF 分立半导体产品 晶闸管 - DIAC,SIDAC  | MCC  | 
LLDB3产品属性
- 类型
描述
 - 型号
LLDB3
 - 功能描述
两端交流开关元件 150mW Bi-directional Trigger Diode
 - RoHS
否
 - 制造商
STMicroelectronics 转折电流
 - VBO
45 V
 - 安装风格
SMD/SMT
 - 封装/箱体
SOT-23
 - 封装
Reel
 
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 | 
|---|---|---|---|---|---|---|---|
Semitehelec  | 
2021+  | 
LL34  | 
36800  | 
一级代理,专注军工、汽车、医疗、工业、新能源、电力  | 
|||
CJ/长电  | 
24+  | 
LL-34  | 
50000  | 
只做原装,欢迎询价,量大价优  | 
|||
ST/意法  | 
2450+  | 
LL34  | 
6885  | 
只做原装正品假一赔十为客户做到零风险!!  | 
|||
FORMOSA  | 
2223+  | 
SOD-80  | 
26800  | 
只做原装正品假一赔十为客户做到零风险  | 
|||
JH  | 
LL34(  | 
50000  | 
一级代理 原装正品假一罚十价格优势长期供货  | 
||||
LG INNOTEK  | 
25+  | 
238  | 
公司优势库存 热卖中!  | 
||||
台产  | 
25+  | 
LL34  | 
54648  | 
百分百原装现货 实单必成  | 
|||
TK通科  | 
2407+  | 
LL-34  | 
30098  | 
全新原装!仓库现货,大胆开价!  | 
|||
LL34  | 
24+  | 
LL34  | 
663300  | 
郑重承诺只做原装进口现货  | 
|||
ST  | 
2019+ROHS  | 
DO-214AC(SMA)  | 
66688  | 
森美特高品质产品原装正品免费送样  | 
LLDB3芯片相关品牌
LLDB3规格书下载地址
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2013-1-23
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