Schottky Diodes

Features • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switch

SCHOTTKY BARRIER DIODES

VRRM : 70V , 60V FEATURES : • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diode

Small-Signal Diode Schottky Diodes

Features ◆ For general purpose applications ◆ Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. ◆ The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switch

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • For general purpose applications • Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast

SMALL SIGNAL SCHOTTKY DIODES

VOLTAGE RANGE: 60 V CURRENT: 400 mW FEATURES ◇ For general purpose applications ◇ Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and co

SCHOTTKY BARRIER DIODES

VRRM : 70V , 60V FEATURES : • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diode

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • For general purpose applications • Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast

SCHOTTKY BARRIER SWITCHING DIODE

Features ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Fast Switching Time ● Low Reverse Capacitance

0.015A,60V,Surface Mount Small Signal Schottky Diodes

封装/外壳：DO-213AC，MINI-MELF，SOD-80 包装：卷带（TR） 描述：DIODE SCHOTTKY 60V 15MA MINIMELF 分立半导体产品 二极管 - 整流器 - 单

Pause Detection Circuits of Radio Cassette, Cassette Deck

■ Overview The AN6262N and the AN6263N are the pause detection integrated circuits which select the program on the cassette tape. In the ordinal method, tape speed is different depending on the PLAY and FF/REW, and also nonsignal time between the programs is different. Therefore, two time const

SCHOTTKY BARRIER DIODES

• 1N5711UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS PER MIL-PRF-19500/444 • 1N5712UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS PER MIL-PRF 19500/445 • SCHOTTKY BARRIER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED, DOUBLE PLUG CONSTRUCTION

SUPERminiTM HIGH VOLTAGE SCHOTTKY DIODE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDD6263 is a High Voltage, low VF, Silicon Schottky diode in a SUPERmini™ surface mount package, designed for fast switching applications requiring low forward voltage drop. Marking code is D63 FEATURES: • HIGH VOLTAGE (70V) • LOW FORWARD VOLTAGE • PART

8-BIT OTP/EPROM MCUs WITH A/D CONVERTER, SAFE RESET, AUTO-RELOAD TIMER, EEPROM AND SPI

GENERAL DESCRIPTION INTRODUCTION The ST62T53C, ST62T60C, ST62T63C and ST62E60C devices are low cost members of the ST62xx 8-bit HCMOS family of microcontrollers, which is targeted at low to medium complexity applications. All ST62xx devices are based on a building block approach: a common co