Schottky Barrier Diodes

Features: * Silicon Epitaxial Planner Diode * Low Reverse Current and Low Forward Voltage * Low Current Rectification and High Speed Switching * High Reliability * Used in Recorder, Radio, TV, Telephone as Detectors

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • Metal-on-silicon junction, majority carrier conduction • High current capability, Low forward voltage drop • Extremely low reverse current IR • Ultra speed switching characteristics • Small temperature coefficient of forward characteristics • Satisfactory Wave detection efficiency

500 mW Surface Mount LL-34 Hermetically Sealed Glass Small Signal Schottky Diode

Specification Features: ■ LL-34 (Mini-MELF) Package (JEDEC) ■ Surface Device Type Mounting ■ Hermetically Sealed Glass ■ Compression Bonded Construction ■ All External Surfaces Are Corrosion Resistant And Terminals Are Readily Solderable ■ RoHS Compliant ■ Matte Tin (Sn) Terminal Finish ■

Plastic-Encapsulate Transistors

■Features ● High reliability ● Low reverse current and low forward voltage ■ Applications ● Low current rectification and high speed switching

Schottky Barrier Diodes

30-50 mAMPERES 40-45 VOLTS Features * Silicon Epitaxial Planner Diode * Low Reverse Current and Low Forward Voltage * Low Current Rectification and High Speed Switching * High Reliability * Used in Recorder, Radio, TV, Telephone as Detectors

SMALL SINGAL SCHOTTKY DIODES

FEATURES • Metal-on-silicon junction, majority carrier conduction • High current capability, Low forward voltage drop • Extremely low reverse current IR • Ultra speed switching characteristics • Small temperature coefficient of forward characteristics • Satisfactory wave detection efficiency

SMALL SIGNAL SCHOTTKY DIODES

FEATURES Metal-on-silicon junction, majority carrier conduction High current capability, Low forward voltage drop Extremely low reverse current IR Ultra speed switching characteristics Small temperature coefficient of forward characteristics Satisfactory Wave detection efficiency For use in

Schottky Barrier Diode

Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching

Silicon Schottky Barrier Diode

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • Metal-on-silicon junction, majority carrier conduction • High current capability, Low forward voltage drop • Extremely low reverse current IR • Ultra speed switching characteristics • Small temperature coefficient of forward characteristics • Satisfactory wave detection efficiency

MINI MELF Glass-Encapsulate Diodes

Small Signal Fast Switching Diodes Features ● High reliability ● Low reverse current and low forward voltage Applications ● Low current rectification and high speed switching

Schottky Barrier Rectifier

Features • High Reliability • Low Reverse Current and Low Forward Voltage • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1

Schottky Barrier Rectifier

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MINI MELF Glass-Encapsulate Diodes

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肖特基二极管

SCHOTTKY BARRIER RECTIFIERS

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LOW VF肖特基二极管