丝印代码：LL024N；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Rosin = 85m @Vos = 10V. Rosin = 100m2 @Vgs = 45V. High dense cel design for extremely low Rosin. Rugged and relabi. Lead free products acquired. SOT-223 package.

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC

HEXFET Power MOSFET

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1.4cm (0.55-inch) NTSC/PAL Color LCD Panel

Description The LCX024AKB is a 1.4cm diagonal active matrix TFT-LCD panel addressed by polycrystalline silicon super thin film transistors with built-in peripheral driving circuit. This panel provides full-color representation in NTSC/PAL mode. RGB dots are arranged in a delta pattern featuring h

Error Amplifier ICs

Erro r Amplifier ICs (SE series) SE005N Variable Voltage Detection Type Error Amplifier ICs SE-B3

HIGH VOLTAGE IGNITION COIL DRIVER POWER IC

DESCRIPTION The VB024 is a high voltage integrated circuit made using SGS-THOMSON VIPower thecnology, with vertical current flow power darlington and logic level compatible driving circuit. The device performs the following functions: power stage for driving the primary side of the ignition coi

N-CHANNEL POWER MOSFET

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Silicon planar type

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