型号 功能描述 生产厂家&企业 LOGO 操作
LH28F800BG

8M-bit(512kBx16)SmartVoltageFlashMemory

DESCRIPTION TheLH28F800SG-LflashmemorywithSmartVoltagetechnologyisahigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800SG-LcanoperateatVCC=2.7VandVPP=2.7V.Itslowvoltageoperationcapabilityrealizeslongerbattery

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800SG-L/SGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800SG-L/SGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemory

DESCRIPTION TheLH28F800SG-LflashmemorywithSmartVoltagetechnologyisahigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800SG-LcanoperateatVCC=2.7VandVPP=2.7V.Itslowvoltageoperationcapabilityrealizeslongerbattery

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

8M-bit(512kBx16)SmartVoltageFlashMemories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

LH28F800BG产品属性

  • 类型

    描述

  • 型号

    LH28F800BG

  • 制造商

    SHARP

  • 制造商全称

    Sharp Electrionic Components

  • 功能描述

    8 M-bit(512 kB x 16) SmartVoltage Flash Memory

更新时间:2025-6-23 8:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SHARP
2016+
BGA
2500
只做原装,假一罚十,公司可开17%增值税发票!
SHARP
2020+
TSOP-48
520
百分百原装正品 真实公司现货库存 本公司只做原装 可
SHARP/夏普
23+
TSSOP
98900
原厂原装正品现货!!
SHARP/夏普
23+
TSOP-48
89630
当天发货全新原装现货
SHARR
25+
TSSOP
13800
原装,请咨询
SHARR
99+
TSSOP
3215
全新原装进口自己库存优势
SHARP/夏普
24+
TSSOP
30662
只做原装 公司现货库存
SHARP/夏普
24+
NA/
2718
优势代理渠道,原装正品,可全系列订货开增值税票
SHARP/夏普
25+
TSSOP
996880
只做原装,欢迎来电资询
SHARP
25+23+
TSOP
38169
绝对原装正品全新进口深圳现货

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