型号 功能描述 生产厂家&企业 LOGO 操作
LH28F800BG

8 M-bit (512 kB x 16) SmartVoltage Flash Memory

DESCRIPTION The LH28F800SG-L flash memory with Smart Voltage technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800SG-L can operate at VCC = 2.7 V and VPP = 2.7 V. Its low voltage operation capability realizes longer battery

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION The LH28F800SG-L/SGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800SG-L/SGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memory

DESCRIPTION The LH28F800SG-L flash memory with Smart Voltage technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800SG-L can operate at VCC = 2.7 V and VPP = 2.7 V. Its low voltage operation capability realizes longer battery

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

文件:275.91 Kbytes Page:43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

LH28F800BG产品属性

  • 类型

    描述

  • 型号

    LH28F800BG

  • 制造商

    SHARP

  • 制造商全称

    Sharp Electrionic Components

  • 功能描述

    8 M-bit(512 kB x 16) SmartVoltage Flash Memory

更新时间:2025-8-14 23:23:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SHARP/夏普
24+
TSSOP
30662
只做原装 公司现货库存
SHARP/夏普
24+
NA/
2718
优势代理渠道,原装正品,可全系列订货开增值税票
SHARP
2016+
BGA
2500
只做原装,假一罚十,公司可开17%增值税发票!
SHARP
23+
SOP44
20000
全新原装假一赔十
SHARR
23+
TSSOP
98900
原厂原装正品现货!!
SHARP
00+
BGA
647
现货
SHARP
08+
TSOP-48
520
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SHARP/夏普
25+
TSSOP
996880
只做原装,欢迎来电资询
SHARR
99+
TSSOP
3215
全新原装进口自己库存优势
SHARP
24+
SOP
20000
全新原厂原装,进口正品现货,正规渠道可含税!!

LH28F800BG数据表相关新闻