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位置：首页 > IC中文资料第5658页 > LH28F800

型号 功能描述 生产厂家&企业 LOGO 操作
LH28F800

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800SG-L/SGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800SG-L/SGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BG

8M-bit(512kBx16)SmartVoltageFlashMemory

DESCRIPTION TheLH28F800SG-LflashmemorywithSmartVoltagetechnologyisahigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800SG-LcanoperateatVCC=2.7VandVPP=2.7V.Itslowvoltageoperationcapabilityrealizeslongerbattery

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGBBL12

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGBBL85

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGBTL12

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGBTL85

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGEBL12

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGEBL85

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGETL12

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGETL85

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGHBBL12

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGHBBL85

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGHBTL12

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGHBTL85

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGHEBL12

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGHEBL85

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGHETL12

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGHETL85

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGHE-TL85

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGH-L

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGH-L

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGHRBL12

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGHRBL85

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGHRTL12

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGHRTL85

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BG-L

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BG-L

8M-bit(512kBx16)SmartVoltageFlashMemory

DESCRIPTION TheLH28F800SG-LflashmemorywithSmartVoltagetechnologyisahigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800SG-LcanoperateatVCC=2.7VandVPP=2.7V.Itslowvoltageoperationcapabilityrealizeslongerbattery

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BG-L

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGRBL12

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGRBL85

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGRTL12

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGRTL85

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGXX-XL12

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGXX-XL85

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BJB-PTTL10

8M(x8/x16)FlashMemory

ProductOverview Theproductisahigh-performance8M-bitBootBlockFlashmemoryorganizedas512K-wordof16bitsor1Mbyteof8bits.The512K-word/1M-byteofdataisarrangedintwo4K-word/8K-bytebootblocks,six4K-word/8Kbyteparameterblocksandfifteen32K-word/64K-bytemainblockswhic

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BJB-PTTL90

8M(x8/x16)FlashMemory

8M-BIT(512Kbit×16/1Mbit×8)BootBlockFlashMEMORY Theproductisahigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications. TheproductcanoperateatVCC=2.7V-3.6VandVCCW=2.7V-3.6Vor11.7V-12.3V.Itslowvoltageoperationcapabilityrealizeb

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BJHE-PBTL90

8M(x8/x16)FlashMemory

8M-BIT(512Kbit×16/1Mbit×8)BootBlockFlashMEMORY Theproductisahigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications. TheproductcanoperateatVCC=2.7V-3.6VandVCCW=2.7V-3.6Vor11.7V-12.3V.Itslowvoltageoperationcapabilityrealizeb

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BJHE-PTTL90

8M(x8/x16)FlashMemory

8M-BIT(512Kbit×16/1Mbit×8)BootBlockFlashMEMORY Theproductisahigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications. TheproductcanoperateatVCC=2.7V-3.6VandVCCW=2.7V-3.6Vor11.7V-12.3V.Itslowvoltageoperationcapabilityrealizeb

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800SG

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800SG-L/SGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800SG-L/SGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800SG

8M-bit(512kBx16)SmartVoltageFlashMemory

DESCRIPTION SHARP’sLH28F800SGFlashmemorywithSmartVoltagetechnologyisahigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.LH28F800SGcanoperateatVCC=2.7VandVPP=2.7V.Itslowvoltageoperationcapabilityrealizelongerbatterylife

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800SGH-L

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800SG-L/SGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800SG-L/SGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800SG-L

8M-bit(512kBx16)SmartVoltageFlashMemory

DESCRIPTION SHARP’sLH28F800SGFlashmemorywithSmartVoltagetechnologyisahigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.LH28F800SGcanoperateatVCC=2.7VandVPP=2.7V.Itslowvoltageoperationcapabilityrealizelongerbatterylife

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800SG-L

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800SG-L/SGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800SG-L/SGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800SG-L10

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800SG-L/SGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800SG-L/SGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800SG-L70

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800SG-L/SGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800SG-L/SGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800SGN-L10

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800SG-L/SGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800SG-L/SGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800SGN-L70

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800SG-L/SGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800SG-L/SGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800SU

8M(512K횞16,1M횞8)FlashMemory

INTRODUCTION Sharp’sLH28F800SU8MFlashMemoryisarevolutionaryarchitecturewhichenablesthedesignoftrulymobile,highperformance,personalcomputingandcommunicationproducts.Withinnovativecapabilities,5Vsinglevoltageoperationandveryhighread/writeperformance,theLH28F800S

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800SUT-70

8M(512K횞16,1M횞8)FlashMemory

INTRODUCTION Sharp’sLH28F800SU8MFlashMemoryisarevolutionaryarchitecturewhichenablesthedesignoftrulymobile,highperformance,personalcomputingandcommunicationproducts.Withinnovativecapabilities,5Vsinglevoltageoperationandveryhighread/writeperformance,theLH28F800S

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGB-BL12

8M-bit(512kBx16)SmartVoltageFlashMemories

文件：275.91 Kbytes Page：43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGB-BL85

8M-bit(512kBx16)SmartVoltageFlashMemories

文件：275.91 Kbytes Page：43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGB-L

8M-bit(512kBx16)SmartVoltageFlashMemories

文件：275.91 Kbytes Page：43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGB-TL12

8M-bit(512kBx16)SmartVoltageFlashMemories

文件：275.91 Kbytes Page：43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGB-TL85

8M-bit(512kBx16)SmartVoltageFlashMemories

文件：275.91 Kbytes Page：43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGE-BL12

8M-bit(512kBx16)SmartVoltageFlashMemories

文件：275.91 Kbytes Page：43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGE-BL85

8M-bit(512kBx16)SmartVoltageFlashMemories

文件：275.91 Kbytes Page：43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGE-TL12

8M-bit(512kBx16)SmartVoltageFlashMemories

文件：275.91 Kbytes Page：43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGE-TL85

8M-bit(512kBx16)SmartVoltageFlashMemories

文件：275.91 Kbytes Page：43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGHB-BL12

8M-bit(512kBx16)SmartVoltageFlashMemories

文件：275.91 Kbytes Page：43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP
LH28F800BGHB-BL85

8M-bit(512kBx16)SmartVoltageFlashMemories

文件：275.91 Kbytes Page：43 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP

LH28F800产品属性

  • 类型

    描述

  • 型号

    LH28F800

  • 制造商

    SHARP

  • 制造商全称

    Sharp Electrionic Components

  • 功能描述

    8 M-bit(512 kB x 16) SmartVoltage Flash Memories

LH28F800供应商更多...

更新时间：2025-7-19 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
LH28F800SUT-70
SHARP/夏普
24+
NA/
948
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市凌旭科技有限公司
LH28F800BVHE-TTL90
SHARP
2016+
TSOP
9000
只做原装,假一罚十,公司可开17%增值税发票!
询价
上海意淼电子科技有限公司
LH28F800SUT-70
SHARP
23+
TSSOP5
20000
全新原装假一赔十
询价
深圳市纳艾斯科技有限公司
LH28F800BJE-PTTL90
SHARP
24+
TSOP48
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
深圳市欧亚佳电子有限公司
LH28F800BGHE-TL85
SHARP
20+
TSOP
11520
特价全新原装公司现货
询价
深圳市科芯源微电子有限公司
LH28F800BJE-PTTL90
SHARP/夏普
25+
TSOP-48
54648
百分百原装现货 实单必成
询价
深圳市益百分电子有限公司
LH28F800BGHE-TL85
SHARR
99+
TSSOP
3215
全新原装进口自己库存优势
询价
深圳市明嘉莱科技有限公司
LH28F800BJE-PTTL90
SHARP/PBF
24+
TSOP
880000
明嘉莱只做原装正品现货
询价
深圳市华睿芯科技有限公司
LH28F800BJE-PBTL90
SHARP
24+
TSSOP
20000
全新原厂原装，进口正品现货，正规渠道可含税！！
询价
深圳市威雅利发展有限公司
LH28F800SUT-70
SHARP
00+
TSOP
650
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价

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