单片采样保持电路

The LF198 is a monolithic sample-and-hold circuit which utilizes BI-FET technology to obtain ultra-high dc accuracy with fast acquisition of signal and low droop rate. Operating as a unity gain follower, dc gain accuracy is 0.002% typical and acquisition time is as low as 6 μs to 0.01%. A bi • Operates from ±5V to ±18V supplies\n• Less than 10 μs acquisition time\n• TTL, PMOS, CMOS compatible logic input\n• 0.5 mV typical hold step at Ch = 0.01 μF\n• Low input offset\n• 0.002% gain accuracy\n• Low output noise in hold mode\n• Input characteristics do not change during hold mode\n• H;

LF198QML Monolithic Sample-and-Hold Circuits

文件：994.7 Kbytes Page：20 Pages

Monolithic Sample-and-Hold Circuits

文件：1.08394 Mbytes Page：22 Pages

单片采样保持电路

The LF198 is a monolithic sample-and-hold circuit which utilizes BI-FET technology to obtain ultra-high dc accuracy with fast acquisition of signal and low droop rate. Operating as a unity gain follower, dc gain accuracy is 0.002% typical and acquisition time is as low as 6 μs to 0.01%. A bi • Operates from ±5V to ±18V supplies\n• Less than 10 μs acquisition time\n• TTL, PMOS, CMOS compatible logic input\n• 0.5 mV typical hold step at Ch = 0.01 μF\n• Low input offset\n• 0.002% gain accuracy\n• Low output noise in hold mode\n• Input characteristics do not change during hold mode\n• H;

Monolithic Sample-and-Hold Circuits

文件：1.08394 Mbytes Page：22 Pages

Monolithic Sample-and-Hold Circuits

文件：1.08394 Mbytes Page：22 Pages

Monolithic Sample-and-Hold Circuits

文件：520.789 Kbytes Page：13 Pages

Monolithic Sample-and-Hold Circuits

文件：520.789 Kbytes Page：13 Pages

Monolithic Sample-and-Hold Circuits

文件：520.789 Kbytes Page：13 Pages

Monolithic Sample-and-Hold Circuits

文件：520.789 Kbytes Page：13 Pages

Silicon NPN Transistor High Voltage Power Transistor

Description: The NTE198 is a high voltage silicon NPN power transistor in a TO220 type package designed for use as a line operated audio output amplifier, switchmode power supply driver, and other switchmode applications.