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型号 功能描述 生产厂家 企业 LOGO 操作
LF198JAN

单片采样保持电路

The LF198 is a monolithic sample-and-hold circuit which utilizes BI-FET technology to obtain ultra-high dc accuracy with fast acquisition of signal and low droop rate. Operating as a unity gain follower, dc gain accuracy is 0.002% typical and acquisition time is as low as 6 μs to 0.01%. A bi • Operates from ±5V to ±18V Supplies\n• Less Than 10 μs Acquisition Time\n• TTL, PMOS, CMOS Compatible Logic Input\n• 0.5 mV Typical Hold Step at Ch = 0.01 μF\n• Low Input Offset\n• 0.002% Gain Accuracy\n• Low Output Noise in Hold Mode\n• Input Characteristics Do Not Change During Hold Mode\n• H;

TI

德州仪器

LF198JAN

LF198JAN Monolithic Sample-and-Hold Circuits

文件:988.89 Kbytes Page:21 Pages

TI

德州仪器

LF198JAN

LF198JAN Monolithic Sample-and-Hold Circuits

文件:966.33 Kbytes Page:19 Pages

TI

德州仪器

LF198JAN

LF198JAN Monolithic Sample-and-Hold Circuits

文件:1.01558 Mbytes Page:21 Pages

TI

德州仪器

单片采样保持电路

The LF198 is a monolithic sample-and-hold circuit which utilizes BI-FET technology to obtain ultra-high dc accuracy with fast acquisition of signal and low droop rate. Operating as a unity gain follower, dc gain accuracy is 0.002% typical and acquisition time is as low as 6 μs to 0.01%. A bi • Operates from ±5V to ±18V Supplies\n• Less Than 10 μs Acquisition Time\n• TTL, PMOS, CMOS Compatible Logic Input\n• 0.5 mV Typical Hold Step at Ch = 0.01 μF\n• Low Input Offset\n• 0.002% Gain Accuracy\n• Low Output Noise in Hold Mode\n• Input Characteristics Do Not Change During Hold Mode\n• H;

TI

德州仪器

LF198JAN Monolithic Sample-and-Hold Circuits

文件:1.01558 Mbytes Page:21 Pages

TI

德州仪器

LF198JAN Monolithic Sample-and-Hold Circuits

文件:1.01558 Mbytes Page:21 Pages

TI

德州仪器

Monolithic Sample-and-Hold Circuits

文件:520.789 Kbytes Page:13 Pages

NSC

国半

Monolithic Sample-and-Hold Circuits

文件:520.789 Kbytes Page:13 Pages

NSC

国半

Monolithic Sample-and-Hold Circuits

文件:520.789 Kbytes Page:13 Pages

NSC

国半

Monolithic Sample-and-Hold Circuits

文件:520.789 Kbytes Page:13 Pages

NSC

国半

Silicon NPN Transistor High Voltage Power Transistor

Description: The NTE198 is a high voltage silicon NPN power transistor in a TO220 type package designed for use as a line operated audio output amplifier, switchmode power supply driver, and other switchmode applications.

NTE

LF198JAN产品属性

  • 类型

    描述

  • 型号

    LF198JAN

  • 制造商

    TI

  • 制造商全称

    Texas Instruments

  • 功能描述

    LF198JAN Monolithic Sample-and-Hold Circuits

更新时间:2026-5-14 18:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
原厂
2540+
CAN8
6852
只做原装正品假一赔十为客户做到零风险!!
TI/德州仪器
22+
CLGA-14
20000
只做原装 品质保障
NS
CAN
8650
一级代理 原装正品假一罚十价格优势长期供货
NS
24+
CAN
500
VISHAY/威世
2022+
DIP
248000
原厂代理 终端免费提供样品
ST
23+24
TO-252
59630
主营原装MOS,二三级管,肖特基,功率场效应管
TI(德州仪器)
25+26+
TO-CAN
3000
全网低价,原装原包
NS/国半
23+
NA
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
2022+
1
全新原装 货期两周

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