Lowest Cost, Dual Output Ultra-Miniature 1W SMT DC/DC Con vert ers

Key Features: • 1W Output Power • Ultra-Miniature SMT Case • UL Approved (File E245422) • Dual Outputs • Low 0.29” Profile • 1,000 VDC Isolation • >3.5 MHour MTBF • 3.3V, 5V, & 12V Inputs • LOWEST COST!

F100ED SERIES

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Low Cost, Dual Output High Isolation 1W SMT DC/DC Converters

Key Features: • 1W Output Power • 3,000 VDC Isolation • Ultra-Miniature SMT Case • UL Approved (File E245422) • Dual Outputs • Low 0.24” Profile • >3.5 MHour MTBF • 3.3, 5V, & 12V Inputs • LOWEST COST!

LF100EDI SERIES

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PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

0.25關m Sea of Gates and Customer Structured Arrays

DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit (ASIC) products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MG115P series and the CSA-based MG75P series use a five-layer metal process on 0.25µm drawn (0.18µm L-eff

6-Pin DIP Optoisolators Darlington Output

6-Pin DIP Optoisolators Darlington Output The MTIL113 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This device is designed for use in applications requiring high collector output currents at lower input currents

Reference Diode

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Reference Diode

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