1W Dual Output Surface Mountable DC/DC Converters

[MicroPower Direct] Key Features ● Ultra-Miniature SMT Package ● Lead Frame Technology ● 1W Output Power ● 5V and 12V Inputs ● -40ºC to +85ºC Operation ● Low Cost

Ultra-Miniature, 1W Dual Output SMT DC/DC Converters

Key Features: • 1W Output Power • Ultra-Miniature SMT Case • 1,000 VDC Isolation • 5V, 12V & 24V Inputs • -40ºC to +85ºC Operation • 12 Standard Models • 2.0 MH MTBF Minimum • Industry Standard Pin-Out

High Isolation, 1W Dual Output SMT DC/DC Converters

Key Features: • 1W Output Power • Ultra-Miniature SMT Case • 3,000 VDC Isolation • 5V, 12V & 24V Inputs • -40ºC to +85ºC Operation • 9 Standard Models • 2.0 MH MTBF Minimum • Industry Standard Pin-Out

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

0.25關m Sea of Gates and Customer Structured Arrays

DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit (ASIC) products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MG115P series and the CSA-based MG75P series use a five-layer metal process on 0.25µm drawn (0.18µm L-eff

6-Pin DIP Optoisolators Darlington Output

6-Pin DIP Optoisolators Darlington Output The MTIL113 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This device is designed for use in applications requiring high collector output currents at lower input currents

Reference Diode

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Reference Diode

文件：126.55 Kbytes Page：4 Pages