45W 28V 2GHz LDMOS TRANSISTOR

The LET20045C is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.0 GHz. The LET20045C is designed for high gain and broadband performance operating in common source mode at 36 V. Excellent thermal stability\nCommon source configuration\nP\nOUT (@ 28 V)= 54 W with 13.3 dB gain @ 2000 MHz\nP\nOUT (@ 36 V)= 65 W with 12.5 dB gain @ 2000 MHz\nBeO free package\nIn compliance with the 2002/95/EC European directive;

Excellent thermal stability

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封装/外壳：M243 包装：托盘 描述：RF MOSFET N CH 80V 12A M243 分立半导体产品 晶体管 - FET，MOSFET - 射频

Schottky PowerMod

Schottky PowerMod ● Schottky Barrier Rectifier ● Guard Ring Protection ● Common Cathode Center Tap ● 200 Amperes/35 to 50 Volts ● 175°C Junction Temperature ● Reverse Energy Tested ● ROHS Compliant

Schottky PowerMod

● Schottky Barrier Rectifier ● Guard Ring Protection ● 200 Amperes/35 to 50 Volts ● 175 °C Junction Temperature ● Reverse Energy Tested ● ROHS Compliant

200 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability

SCHOTTKY BARRIER RECTIFIERS 200 AMPERES 45 to 60 VOLTS

POWERTAP II SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Dual Diode Construction — May Be Paralleled for Higher Current Output • Guardring for Stress Protection • Low Forward

2.00mm PITCH CONNECTOR

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