60W 28V 1.6GHz LDMOS TRANSISTOR

The LET16060C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.6 GHz. The LET16060C is designed for high gain and broadband performance operating in common source mode at 28 V. Excellent thermal stability\nCommon source configuration\nP\nOUT(@ 28 V)= 60 W with 13.8 dB gain @ 1600 MHz\nBeO free package\nIn compliance with the 2002/95/EC European directive;

封装/外壳：M243 包装：托盘 描述：FET RF 80V 1.6GHZ M243 分立半导体产品 晶体管 - FET，MOSFET - 射频

Excellent thermal stability

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SCHOTTKY DIODES MODULE TYPE 160A

Features High Surge Capability Types Up to 100V VRRM

160 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability

Wide Bandwidth Yaw Rate Gyroscope with SPI

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SCHOTTKY DIODES MODULE TYPE 160A

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17-30 WATTS SINGLE & MULTI OUTPUT DC/DC INDUSTRIAL

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