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LE507

Class A Output Stage with Input Biasing

[GENNUM] DESCRIPTION The LE507 is a low voltage class A amplifier design, primarily for low voltage and low power use. The broad application include AF output stages, RF amplifiers and output stages of the hearing instruments. The circuit is comprised of three stages all of them having acc

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LE507

Class A Output Stage with Input Biasing

DESCRIPTION\nThe LE507 is a low voltage class A amplifier design, primarily for low voltage and low power use. The broad application include AF output stages, RF amplifiers and output stages of the hearing instruments. The circuit is comprised of three stages all of them having access to their colle • 76 dB of gain\n• internal DC bias for I/P stage\n• applications include AF output stages, hearing aids and RF amplifiers\n• total harmonic distortion 1% (typical) ;

SEMTECH

先之科

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 600 V Mean forward current 3560 A Surge current 30 kA

POSEICO

HIGH EFFICIENCY RECTIFIERS(5.0A,600-1000V)

MOSPEC

统懋

300V, 64-Channel Serial to Parallel Converter with High Voltage Push-Pull Outputs

General Description The HV507 is a low voltage serial to high voltage parallel converter with 64 high voltage push-pull outputs. This device has been designed for use as a printer driver for electrostatic applications. It can also be used in any application requiring multiple high voltage outpu

SUTEX

300V, 64-Channel Serial to Parallel Converter with High Voltage Push-Pull Outputs

General Description The HV507 is a low voltage serial to high voltage parallel converter with 64 high voltage push-pull outputs. This device has been designed for use as a printer driver for electrostatic applications. It can also be used in any application requiring multiple high voltage outpu

SUTEX

Silicon Rectifier Diode

Description: The NTE507 is a silicon rectifier diode designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference and free wheeling diodes. This device has a typical recovery time of 150 nanoseconds providing high efficiency

NTE

LE507产品属性

  • 类型

    描述

  • 型号

    LE507

  • 功能描述

    Class A Output Stage with Input Biasing

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