GaAs Infrared Emitter

Features: • Very highly efficient GaAs-LED • High reliability • Spectral match with silicon photodetectors • Same package as SFH 484 Applications • IR remote control of hi-fi and TV-sets, video tape recorders, dimmers • Sensor technology • Discrete interrupters • Remote control

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter

Features ● Extremely narrow half angle ● GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process ● High reliability ● High pulse handling capability ● Available in groups ● Same package as SFH 484 Applications ● IR remote control of hi-fi and TV-sets, video tape recorder

GaAs Infrared Emitter

Features: • Very highly efficient GaAs-LED • High reliability • Spectral match with silicon photodetectors • Same package as SFH 484 Applications • IR remote control of hi-fi and TV-sets, video tape recorders, dimmers • Sensor technology • Discrete interrupters • Remote control

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter

Features ● Extremely narrow half angle ● GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process ● High reliability ● High pulse handling capability ● Available in groups ● Same package as SFH 484 Applications ● IR remote control of hi-fi and TV-sets, video tape recorder

GaAs Infrared Emitter

Features: • Very highly efficient GaAs-LED • High reliability • Spectral match with silicon photodetectors • Same package as SFH 484 Applications • IR remote control of hi-fi and TV-sets, video tape recorders, dimmers • Sensor technology • Discrete interrupters • Remote control

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter

Features ● Extremely narrow half angle ● GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process ● High reliability ● High pulse handling capability ● Available in groups ● Same package as SFH 484 Applications ● IR remote control of hi-fi and TV-sets, video tape recorder

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION Silicon n-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc., due to

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION Silicon n-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc., due to

HIGH SPEED CMOS QUAD OPERATIONAL AMPLIFIERS

Description The TS274 devices are low cost, quad operational amplifiers designed to operate with single or dual supplies. These operational amplifiers use the ST silicon gate CMOS process giving an excellent consumption-speed ratio. These series are ideally suited for low consumption applicatio

HIGH SPEED CMOS QUAD OPERATIONAL AMPLIFIERS

Description The TS274 devices are low cost, quad operational amplifiers designed to operate with single or dual supplies. These operational amplifiers use the ST silicon gate CMOS process giving an excellent consumption-speed ratio. These series are ideally suited for low consumption applicatio

HIGH SPEED CMOS QUAD OPERATIONAL AMPLIFIERS

Description The TS274 devices are low cost, quad operational amplifiers designed to operate with single or dual supplies. These operational amplifiers use the ST silicon gate CMOS process giving an excellent consumption-speed ratio. These series are ideally suited for low consumption applicatio