Integrated LLC Controller, High-Voltage Power MOSFETs and Drivers

Features • LLC half-bridge power stage incorporating controller, high and low-side gate drives, and high-voltage power MOSFETs • Eliminates up to 30 external components • High maximum operating frequency of 1 MHz • Nominal steady-state operation up to 500 kHz • Dramatically reduces magnetics

Integrated LLC Controller, High-Voltage Power MOSFETs and Drivers

Features • LLC half-bridge power stage incorporating controller, high and low-side gate drives, and high-voltage power MOSFETs • Eliminates up to 30 external components • High maximum operating frequency of 1 MHz • Nominal steady-state operation up to 500 kHz • Dramatically reduces magnetics

集成的LLC控制器、高压功率MOSFET及驱动器

HiperLCS是一款集成了多功能控制器、高压端和低压端栅极驱动以及两个功率MOSFET的LLC半桥功率级。图1（上）所示为采用HiperLCS器件的功率级结构简图，其中LLC谐振电感集成在变压器中。 • 集成了控制器、高压端和低压端栅极驱动以及高压功率MOSFET的LLC半桥功率级\r\n• 最高工作频率为1 MHz\r\n• 全面的故障处理及电流限制\r\n• 可编程的死区时间可优化设计并提升效率\r\n• 可编程的软启动时间及软启动前延迟\r\n• 与HiperPFS PFC产品配合使用可提供功能完整、高效率、低元件数的电源解决方案;

集成的LLC控制器、高压功率MOSFET及驱动器

HiperLCS是一款集成了多功能控制器、高压端和低压端栅极驱动以及两个功率MOSFET的LLC半桥功率级。图1（上）所示为采用HiperLCS器件的功率级结构简图，其中LLC谐振电感集成在变压器中。 • 集成了控制器、高压端和低压端栅极驱动以及高压功率MOSFET的LLC半桥功率级\r\n• 最高工作频率为1 MHz\r\n• 全面的故障处理及电流限制\r\n• 可编程的死区时间可优化设计并提升效率\r\n• 可编程的软启动时间及软启动前延迟\r\n• 与HiperPFS PFC产品配合使用可提供功能完整、高效率、低元件数的电源解决方案;

Integrated LLC Controller, High-Voltage Power MOSFETs and Drivers

Features • LLC half-bridge power stage incorporating controller, high and low-side gate drives, and high-voltage power MOSFETs • Eliminates up to 30 external components • High maximum operating frequency of 1 MHz • Nominal steady-state operation up to 500 kHz • Dramatically reduces magnetics

Integrated LLC Controller, High-Voltage Power MOSFETs and Drivers

文件：3.08567 Mbytes Page：26 Pages

封装/外壳：16-SSIP，13 引线，裸露焊盘，成形引线 包装：卷带（TR） 描述：IC LLC CTRL MFET 220W ESIP16C 集成电路（IC） 全半桥驱动器

封装/外壳：16-SSIP，13 引线，裸露焊盘，成形引线 包装：卷带（TR） 描述：INTEGRATED LLC CONTROLLER 集成电路（IC） 全半桥驱动器

CATV amplifier modules

DESCRIPTION Hybrid amplifier module in a SOT115J package operating at a supply voltage of 24 V (DC). FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability. APPLICATIONS • CATV systems ope

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DESCRIPTION Hybrid high dynamic range cascode amplifier module with darlington pre-stage dies operating at a voltage supply of 24 V (DC). FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliabili

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4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

GaAlAs Semiconductor Laser

文件：40.25 Kbytes Page：2 Pages