GREEN OVAL LAMP LED

GREEN OVAL LAMP LED

BLUE OVAL LAMP LED

Description Lamp LEDs are effective in hot thermal and humid condition. This high brightness and weather-resistant packaging design makes these Lamp LEDs ideal for Outdoor applications such as traffic signals, variable message signs and backlighting for transparent sign panels. • Non-standoff le

CYAN LAMP LED

INFRARED LAMP LED

1024 WORDS X 4 BITS HIGH-SPEED CMOS STATIC RAM

LC3514, LC3514L 1024 WORDS X 4 BITS HIGH-SPEED CMOS STATIC RAM LC3514D, LC3514E 1024 WORDS X 4 BITS CMOS STATIC RAM

1024 WORDS X 4 BITS HIGH-SPEED CMOS STATIC RAM

LC3514, LC3514L 1024 WORDS X 4 BITS HIGH-SPEED CMOS STATIC RAM LC3514D, LC3514E 1024 WORDS X 4 BITS CMOS STATIC RAM

1024 WORDS X 4 BITS HIGH-SPEED CMOS STATIC RAM

LC3514, LC3514L 1024 WORDS X 4 BITS HIGH-SPEED CMOS STATIC RAM LC3514D, LC3514E 1024 WORDS X 4 BITS CMOS STATIC RAM

1024 WORDS X 4 BITS HIGH-SPEED CMOS STATIC RAM

LC3514, LC3514L 1024 WORDS X 4 BITS HIGH-SPEED CMOS STATIC RAM LC3514D, LC3514E 1024 WORDS X 4 BITS CMOS STATIC RAM

1024 WORDS X 4 BITS HIGH-SPEED CMOS STATIC RAM

LC3514, LC3514L 1024 WORDS X 4 BITS HIGH-SPEED CMOS STATIC RAM LC3514D, LC3514E 1024 WORDS X 4 BITS CMOS STATIC RAM

2048 WORDS x8 BITS CMOS STATIC RAM

2048 WORDS x 8 BITS CMOS STATIC RAM

LC3516A

2048-word x 8bit COMS Syatic RAM

LC3516A

2048-word x 8bit COMS Syatic RAM

LC3516A

2048-word x 8bit COMS Syatic RAM

LC3516A

2048-word x 8bit COMS Syatic RAM

LC3516A

2048-word x 8bit COMS Syatic RAM

LC3516A

2048-word x 8bit COMS Syatic RAM

2048 WORDS x8 BITS CMOS STATIC RAM

2048 WORDS x 8 BITS CMOS STATIC RAM

2048 WORDS x8 BITS CMOS STATIC RAM

2048 WORDS x 8 BITS CMOS STATIC RAM

2048 WORDS x8 BITS CMOS STATIC RAM

2048 WORDS x 8 BITS CMOS STATIC RAM

2048-word x 8bit COMS Syatic RAM

OVERVIEW LC3517A series devices are silicon-gate CMOS, static RAM ICs configured as 2048 words x 8 bits. They incorporate an output enable for high-speed memory access, and TTL-compatible, tristate outputs for direct interfacing with a bus.

2048-word x 8bit COMS Syatic RAM

OVERVIEW LC3517A series devices are silicon-gate CMOS, static RAM ICs configured as 2048 words x 8 bits. They incorporate an output enable for high-speed memory access, and TTL-compatible, tristate outputs for direct interfacing with a bus.

2048-word x 8bit COMS Syatic RAM

OVERVIEW LC3517A series devices are silicon-gate CMOS, static RAM ICs configured as 2048 words x 8 bits. They incorporate an output enable for high-speed memory access, and TTL-compatible, tristate outputs for direct interfacing with a bus.

2048-word x 8bit COMS Syatic RAM

OVERVIEW LC3517A series devices are silicon-gate CMOS, static RAM ICs configured as 2048 words x 8 bits. They incorporate an output enable for high-speed memory access, and TTL-compatible, tristate outputs for direct interfacing with a bus.

2048-word x 8bit COMS Syatic RAM

OVERVIEW LC3517A series devices are silicon-gate CMOS, static RAM ICs configured as 2048 words x 8 bits. They incorporate an output enable for high-speed memory access, and TTL-compatible, tristate outputs for direct interfacing with a bus.

2048-word x 8bit COMS Syatic RAM

OVERVIEW LC3517A series devices are silicon-gate CMOS, static RAM ICs configured as 2048 words x 8 bits. They incorporate an output enable for high-speed memory access, and TTL-compatible, tristate outputs for direct interfacing with a bus.

2048 WORDS x8 BITS CMOS STATIC RAM

2048 WORDS x 8 BITS CMOS STATIC RAM

2048 WORDS x8 BITS CMOS STATIC RAM

2048 WORDS x 8 BITS CMOS STATIC RAM

256 K (32768 words X 8 bits) SRAM with OE and CE control Pins

256 K (32768 words x 8 bits) SRAM with OE and CE Control Pins

256 K (32768 words X 8 bits) SRAM with OE and CE control Pins

256 K (32768 words x 8 bits) SRAM with OE and CE Control Pins

256 K (32768 words X 8 bits) SRAM with OE and CE control Pins?

256 K (32768 words X 8 bits) SRAM with OE and CE control Pins

256 K (32768 words X 8 bits) SRAM with OE and CE control Pins

256 K (32768 words x 8 bits) SRAM with OE and CE Control Pins

256 K (32768 words X 8 bits) SRAM with OE and CE control Pins

256 K (32768 words x 8 bits) SRAM with OE and CE Control Pins

256 K (32768 words X 8 bits) SRAM with OE and CE control Pins?

256 K (32768 words X 8 bits) SRAM with OE and CE control Pins

256 K (32768 words X 8 bits) SRAM with OE and CE control Pins?

256 K (32768 words X 8 bits) SRAM with OE and CE control Pins

256 K (32768 words X 8 bits) SRAM with OE and CE control Pins?

256 K (32768 words X 8 bits) SRAM with OE and CE control Pins

256 K (32768 words X 8 bits) SRAM with OE and CE control Pins

256 K (32768 words x 8 bits) SRAM with OE and CE Control Pins

256 K (32768 words X 8 bits) SRAM with OE and CE control Pins

256 K (32768 words x 8 bits) SRAM with OE and CE Control Pins

Dual Control Pins: OE and CE 256K (32768-word X 8-bit) SRAM

Overview The LC35256D, LC35256DM, and LC35256DT are 32768-word × 8-bit asynchronous silicon gate CMOS static RAMs. These devices use a 6-transistor full CMOS memory cell, and feature low-voltage operation, low current drain, and an ultralow standby current. Features • Supply voltage range: 2.7

Dual Control Pins: OE and CE 256K (32768-word X 8-bit) SRAM

Overview The LC35256D, LC35256DM, and LC35256DT are 32768-word × 8-bit asynchronous silicon gate CMOS static RAMs. These devices use a 6-transistor full CMOS memory cell, and feature low-voltage operation, low current drain, and an ultralow standby current. Features • Supply voltage range: 2.7

Dual Control Pins: OE and CE 256K (32768-word X 8-bit) SRAM

Overview The LC35256D, LC35256DM, and LC35256DT are 32768-word × 8-bit asynchronous silicon gate CMOS static RAMs. These devices use a 6-transistor full CMOS memory cell, and feature low-voltage operation, low current drain, and an ultralow standby current. Features • Supply voltage range: 2.7

Dual Control Pins: OE and CE 256K (32768-word X 8-bit) SRAM

Overview The LC35256D, LC35256DM, and LC35256DT are 32768-word × 8-bit asynchronous silicon gate CMOS static RAMs. These devices use a 6-transistor full CMOS memory cell, and feature low-voltage operation, low current drain, and an ultralow standby current. Features • Supply voltage range: 2.7

256K (32768 words 8 bits) SRAM Control Pins: OE and CE

Overview The LC35256FM and LC35256FT are asynchronous silicon-gate CMOS SRAMs with a 32K-word by 8-bit structure. These are full-CMOS devices with 6 transistors per memory cell, and feature low-voltage operation, a low operating current drain, and an ultralow standby current. Control inputs inc

256K (32768 words X 8 bits) SRAM Control Pins: OE and CE

Overview The LC35256FM and LC35256FT are asynchronous silicon-gate CMOS SRAMs with a 32K-word by 8-bit structure. These are full-CMOS devices with 6 transistors per memory cell, and feature low-voltage operation, a low operating current drain, and an ultralow standby current. Control inputs inc

256K (32768 words X 8 bits) SRAM Control Pins: OE and CE

Overview The LC35256FM and LC35256FT are asynchronous silicon-gate CMOS SRAMs with a 32K-word by 8-bit structure. These are full-CMOS devices with 6 transistors per memory cell, and feature low-voltage operation, a low operating current drain, and an ultralow standby current. Control inputs inc

256K (32768 words X 8 bits) SRAM Control Pins: OE and CE

Overview The LC35256FM and LC35256FT are asynchronous silicon-gate CMOS SRAMs with a 32K-word by 8-bit structure. These are full-CMOS devices with 6 transistors per memory cell, and feature low-voltage operation, a low operating current drain, and an ultralow standby current. Control inputs inc

256K (32768 words X 8 bits) SRAM Control Pins: OE and CE

Overview The LC35256FM and LC35256FT are asynchronous silicon-gate CMOS SRAMs with a 32K-word by 8-bit structure. These are full-CMOS devices with 6 transistors per memory cell, and feature low-voltage operation, a low operating current drain, and an ultralow standby current. Control inputs inc

64K (8192-word 쨈 8-bit) SRAM with OE, CE1, and CE2 Control Pins

Overview The LC3564B, LC3564BS, LC3564BM, and LC3564BT are 8192-word ×8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. Features

64K (8192-word 쨈 8-bit) SRAM with OE, CE1, and CE2 Control Pins

Overview The LC3564B, LC3564BS, LC3564BM, and LC3564BT are 8192-word ×8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. Features

64K (8192-word 쨈 8-bit) SRAM with OE, CE1, and CE2 Control Pins

Overview The LC3564B, LC3564BS, LC3564BM, and LC3564BT are 8192-word ×8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. Features

64K (8192-word 쨈 8-bit) SRAM with OE, CE1, and CE2 Control Pins

Overview The LC3564B, LC3564BS, LC3564BM, and LC3564BT are 8192-word ×8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. Features

64K (8192-word 쨈 8-bit) SRAM with OE, CE1, and CE2 Control Pins

Overview The LC3564B, LC3564BS, LC3564BM, and LC3564BT are 8192-word ×8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. Features

64K (8192-word 쨈 8-bit) SRAM with OE, CE1, and CE2 Control Pins

Overview The LC3564B, LC3564BS, LC3564BM, and LC3564BT are 8192-word ×8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. Features

64K (8192-word x 8-bit) SRAM with OE, CE1, and CE2 Control Pins

Overview The LC3564CM and LC3564CT-55U/70U are 8192-word × 8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. Features • Supply v

64K (8192-word x 8-bit) SRAM with OE, CE1, and CE2 Control Pins

Overview The LC3564CM and LC3564CT-55U/70U are 8192-word × 8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. Features • Supply v

64K (8192-word x 8-bit) SRAM with OE, CE1, and CE2 Control Pins

Overview The LC3564CM and LC3564CT-55U/70U are 8192-word × 8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. Features • Supply v

64K (8192-word x 8-bit) SRAM with OE, CE1, and CE2 Control Pins

Overview The LC3564CM and LC3564CT-55U/70U are 8192-word × 8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. Features • Supply v

64K (8192-word x 8-bit) SRAM with OE, CE1, and CE2 Control Pins

Overview The LC3564CM and LC3564CT-55U/70U are 8192-word × 8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. Features • Supply v

64K (8192-word x 8-bit) SRAM with OE, CE1, and CE2 Control Pins

Overview The LC3564CM and LC3564CT-55U/70U are 8192-word × 8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. Features • Supply v

64K (8192 words x 8 bits) SRAM

Overview The LC3564RM,RT are 8192-word × 8bit, asynchronous, silicon gate, low-voltage CMOS SRAM LSIs.They operate from a 2.0 to 3.6V supply, making them ideal for handheld, battery-operated equipment. Features ■ Supply voltage range: 2.0 to 3.6V • 3V operation: 2.7 to 3.6V • Battery

64K (8192 words x 8 bits) SRAM

Overview The LC3564RM,RT are 8192-word × 8bit, asynchronous, silicon gate, low-voltage CMOS SRAM LSIs.They operate from a 2.0 to 3.6V supply, making them ideal for handheld, battery-operated equipment. Features ■ Supply voltage range: 2.0 to 3.6V • 3V operation: 2.7 to 3.6V • Battery