LC33价格

参考价格:¥20.4506

型号:LC33CN2 品牌:Dialight 备注:这里有LC33多少钱,2025年最近7天走势,今日出价,今日竞价,LC33批发/采购报价,LC33行情走势销售排行榜,LC33报价。
型号 功能描述 生产厂家 企业 LOGO 操作
LC33

TRANSIENT ABSORPTION ZENER

Microsemi

美高森美

LC33

1500 WATT LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR

DESCRIPTION This hermetically sealed Transient Voltage Suppressor (TVS) product family includes a rectifier diode element in series and opposite direction to achieve low capacitance performance below 100 pF (see Figure 2). The low level of TVS capacitance may be used for protecting higher frequen

Microsemi

美高森美

LC33

1500 WATT LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR

文件:196.31 Kbytes Page:4 Pages

Microsemi

美高森美

LC33

1500 WATT LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR

文件:175.28 Kbytes Page:3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

LC33

封装/外壳:DO-13 包装:散装 描述:TVS DIODE 33VWM 58VC DO202AA 电路保护 TVS - 二极管

Microchip

微芯科技

LC33

1500 Watt Low Capacitance Transient Voltage Suppressor

Microchip

微芯科技

Transient Voltage Suppressors for ESD Protection

Feature 450 Watts Peak Pulse Power per Line (tp=8/20μs) Protects two line pairs (four lines) Low Clamping Voltage Low leakage current IEC61000-4-2(ESD) ±30kV (air),±30kV (contact) IEC61000-4-4 (EFT) 40A (5/50ηs) IEC61000-4-5 (LIGHTING) 25A (8/20μs) Applications High-Speed Data Lines 10

UNSEMI

优恩半导体

Transient Voltage Suppressors for ESD Protection

Feature Moisture Sensitivity Level (MSL -1) AEC-Q101 qualified 450 Watts Peak Pulse Power per Line (tp=8/20μs) Protects two lines pairs(four lines) Low Clamping Voltage Low leakage current IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) IEC61000-4-4 (EFT) 40A (5/50ηs) IEC61000-4-5 (LIGHTI

UNSEMI

优恩半导体

GREEN OVAL LAMP LED

GREEN OVAL LAMP LED

SEOUL

首尔半导体

INFRARED LAMP LED

SEOUL

首尔半导体

CYAN LAMP LED

SEOUL

首尔半导体

BLUE OVAL LAMP LED

Description Lamp LEDs are effective in hot thermal and humid condition. This high brightness and weather-resistant packaging design makes these Lamp LEDs ideal for Outdoor applications such as traffic signals, variable message signs and backlighting for transparent sign panels. • Non-standoff le

SEOUL

首尔半导体

Transient Voltage Suppressors for ESD Protection

Features 495 Watts Peak Pulse Power per Line (tp=8/20μs) Protects Four lines Low clamping voltage Working voltages : 5.0V Low leakage current IEC61000-4-4 (EFT) 40A (5/50ηs) IEC61000-4-5 (LIGHTING) 33A (8/20μs) IEC61000-4-2(ESD):±25kV (air discharge) ±15kV (contact discharge); Applicati

UNSEMI

优恩半导体

512K (32768 words X 16 bits) Pseudo-SRAM

512 K (32768 words x 16 bit) Pseudo-SRAM

SANYO

三洋

512K (32768 words X 16 bits) Pseudo-SRAM

512 K (32768 words x 16 bit) Pseudo-SRAM

SANYO

三洋

512K (32768 words X 16 bits) Pseudo-SRAM

512 K (32768 words x 16 bit) Pseudo-SRAM

SANYO

三洋

512K (32768 words X 16 bits) Pseudo-SRAM

512 K (32768 words x 16 bit) Pseudo-SRAM

SANYO

三洋

Transient Voltage Suppressors for ESD Protection

Features 70 Watts Peak Pulse Power per Line (tp=8/20μs) Protects Four 10/100/1000 Ethernet Lines Low clamping voltage Working voltages : 3.3V RoHS Compliant IEC61000-4-4 (EFT) 40A (5/50ηs) IEC61000-4-5 (LIGHTING) 8.5A (8/20μs) IEC61000-4-2(ESD):±30kV (air discharge) ±30kV (contact dischar

UNSEMI

优恩半导体

1MEG (131072 WORDS X 8BITS) PSEUDO-SRAM

SANYO

三洋

1MEG (131072 WORDS X 8BITS) PSEUDO-SRAM

SANYO

三洋

1MEG (131072 WORDS X 8BITS) PSEUDO-SRAM

SANYO

三洋

256 K (32768 words X 8 bits) Pseudo-SRAM

Overview The LC33832 series is composed of pseudo static RAM that operates on a single 5 V power supply and is organized as 32768 words × 8 bits. By using memory cells each composed of a single transistor and capacitor, together with peripheral CMOS circuitry, this series achieves ease of use w

SANYO

三洋

256 K (32768 words X 8 bits) Pseudo-SRAM

Overview The LC33832 series is composed of pseudo static RAM that operates on a single 5 V power supply and is organized as 32768 words × 8 bits. By using memory cells each composed of a single transistor and capacitor, together with peripheral CMOS circuitry, this series achieves ease of use w

SANYO

三洋

256 K (32768 words X 8 bits) Pseudo-SRAM

Overview The LC33832 series is composed of pseudo static RAM that operates on a single 5 V power supply and is organized as 32768 words × 8 bits. By using memory cells each composed of a single transistor and capacitor, together with peripheral CMOS circuitry, this series achieves ease of use w

SANYO

三洋

256 K (32768 words X 8 bits) Pseudo-SRAM

Overview The LC33832 series is composed of pseudo static RAM that operates on a single 5 V power supply and is organized as 32768 words × 8 bits. By using memory cells each composed of a single transistor and capacitor, together with peripheral CMOS circuitry, this series achieves ease of use w

SANYO

三洋

256 K (32768 words X 8 bits) Pseudo-SRAM

Overview The LC33832 series is composed of pseudo static RAM that operates on a single 5 V power supply and is organized as 32768 words × 8 bits. By using memory cells each composed of a single transistor and capacitor, together with peripheral CMOS circuitry, this series achieves ease of use w

SANYO

三洋

256 K (32768 words X 8 bits) Pseudo-SRAM

Overview The LC33832 series is composed of pseudo static RAM that operates on a single 5 V power supply and is organized as 32768 words × 8 bits. By using memory cells each composed of a single transistor and capacitor, together with peripheral CMOS circuitry, this series achieves ease of use w

SANYO

三洋

256 K (32768 words X 8 bits) Pseudo-SRAM

Overview The LC33832 series is composed of pseudo static RAM that operates on a single 5 V power supply and is organized as 32768 words × 8 bits. By using memory cells each composed of a single transistor and capacitor, together with peripheral CMOS circuitry, this series achieves ease of use w

SANYO

三洋

256 K (32768 words X 8 bits) Pseudo-SRAM

Overview The LC33832 series is composed of pseudo static RAM that operates on a single 5 V power supply and is organized as 32768 words × 8 bits. By using memory cells each composed of a single transistor and capacitor, together with peripheral CMOS circuitry, this series achieves ease of use w

SANYO

三洋

512K (65536 words X 8 bits) Pseudo-SRAM

512 K (65536 words x 8 bits) Pseudo-SRAM

SANYO

三洋

512K (65536 words X 8 bits) Pseudo-SRAM

512 K (65536 words x 8 bits) Pseudo-SRAM

SANYO

三洋

512K (65536 words X 8 bits) Pseudo-SRAM

512 K (65536 words x 8 bits) Pseudo-SRAM

SANYO

三洋

512K (65536 words X 8 bits) Pseudo-SRAM

512 K (65536 words x 8 bits) Pseudo-SRAM

SANYO

三洋

TRANSIENT ABSORPTION ZENER

Microsemi

美高森美

1500 WATT LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR

DESCRIPTION This hermetically sealed Transient Voltage Suppressor (TVS) product family includes a rectifier diode element in series and opposite direction to achieve low capacitance performance below 100 pF (see Figure 2). The low level of TVS capacitance may be used for protecting higher frequen

Microsemi

美高森美

Transient Voltage Suppressors for ESD Protection

Features 68 Watts Peak Pulse Power per Line (tp=8/20μs) Protects Two High Speed lines Low clamping voltage Working voltages : 3.3V RoHS Compliant IEC61000-4-4 (EFT) 40A (5/50ηs) IEC61000-4-5 (LIGHTING) 8.5A (8/20μs) IEC61000-4-2(ESD):±30kV (air discharge) ±25kV (contact discharge); App

UNSEMI

优恩半导体

Transient Voltage Suppressors for ESD Protection

Feature 40 Watts Peak Pulse Power per Line (tp=8/20μs) Protects two unidirectional I/O lines Low clamping voltage Low leakage current IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC61000-4-5 (LIGHTING) 4A(8/20μs) IEC61000-4-4 (EFT) 40A (5/50ηs) Applications Color LCD Protection Indu

UNSEMI

优恩半导体

USB 2.0 power and data line

文件:150.37 Kbytes Page:3 Pages

LEIDITECH

雷卯电子

LOW CAPACITANCE TVS DIODE

文件:130.919 Kbytes Page:3 Pages

LEIDITECH

雷卯电子

LOW CAPACITANCE TVS DIODE

LEIDITECH

雷卯电子

ESD静电保护元件

LEIDITECH

雷卯电子

USB 2.0 power and data line

文件:149.81 Kbytes Page:3 Pages

LEIDITECH

雷卯电子

Transient Voltage Suppressors for ESD Protection

文件:1.05442 Mbytes Page:3 Pages

UNSEMI

优恩半导体

LOW CAPACITANCE TVS DIODE ARRAY

文件:293.28 Kbytes Page:3 Pages

LEIDITECH

雷卯电子

Ultra Low Capacitance Bi-Directional TVS Diode Array

文件:426.64 Kbytes Page:3 Pages

LEIDITECH

雷卯电子

Ultra Low Capacitance Bi-Directional TVS Diode Array

文件:426.64 Kbytes Page:3 Pages

LEIDITECH

雷卯电子

Transient Voltage Suppressors Array for ESD Protection

文件:282.44 Kbytes Page:3 Pages

SOCAY

硕凯股份

USB 2.0 power and data line

文件:169.16 Kbytes Page:3 Pages

LEIDITECH

雷卯电子

USB 2.0 power and data line

文件:368.71 Kbytes Page:3 Pages

LEIDITECH

雷卯电子

Infrared LAMP LED

文件:285.42 Kbytes Page:13 Pages

SEOUL

首尔半导体

RED OVAL LAMP LED

文件:392.32 Kbytes Page:14 Pages

SEOUL

首尔半导体

RED LAMP LED

文件:378.31 Kbytes Page:14 Pages

SEOUL

首尔半导体

RED OVAL LAMP LED

文件:392.32 Kbytes Page:14 Pages

SEOUL

首尔半导体

BLUE OVAL LAMP LED

文件:390.41 Kbytes Page:14 Pages

SEOUL

首尔半导体

LOW CAPACITANCE TVS DIODE

文件:131.31 Kbytes Page:3 Pages

LEIDITECH

雷卯电子

LOW CAPACITANCE TVS DIODE

文件:193.28 Kbytes Page:3 Pages

LEIDITECH

雷卯电子

LOW CAPACITANCE AND HIGH SURGE TVS DIODE ARRAY

文件:1.16863 Mbytes Page:5 Pages

LEIDITECH

雷卯电子

4-Line TVS for Ethernet Interfaces

文件:694.11 Kbytes Page:4 Pages

LEIDITECH

雷卯电子

封装/外壳:DO-13 包装:散装 描述:TVS DIODE 33VWM 53.3VC DO202AA 电路保护 TVS - 二极管

Microchip

微芯科技

1500 WATT LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR

文件:196.31 Kbytes Page:4 Pages

Microsemi

美高森美

LC33产品属性

  • 类型

    描述

  • 型号

    LC33

  • 制造商

    Microsemi Corporation

  • 功能描述

    TVS SGL UNI-DIR 33V 1.5KW 2PIN DO-13 - Bulk

更新时间:2025-11-11 19:24:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SEMITEH
25+
SOD323
45623
SEMITEH全新特价LC3301CW即刻询购立享优惠#长期有货
LEADCHIP/岭芯微
24+
SOT23-6
155313
明嘉莱只做原装正品现货
LEADCHIP
14+
SOT23-6
3147
一级代理,专注军工、汽车、医疗、工业、新能源、电力
LEADCHIP
24+
SOT23-6
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
LEADCHIP
SOT23-6
10000
2012
SANYO
2016+
SOP
3500
只做原装,假一罚十,公司可开17%增值税发票!
LEADCHIP
18+
SOT23-6
36653
全新原装现货,可出样品,可开增值税发票
LEADCHIP
22+
SOT23-6
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
LEADCHIP
2025+
SOT23-6
3685
全新原厂原装产品、公司现货销售
Leadchip
24+
SOT23-6
5000
全新原装正品,现货销售

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