丝印代码：LC125A；SN74LVC125A Quadruple Bus Buffer Gate With 3-State Outputs

1 Features • 3-State outputs • Separate OE for all 4 buffers • Operates from 1.65V to 3.6V • Specified from –40°C to 85°C and –40°C to 125°C • Inputs accept voltages to 5.5V • Max tpd of 4.8ns at 3.3V • Typical VOLP (output ground bounce)

丝印代码：LC125A；SN74LVC125A Quadruple Bus Buffer Gate With 3-State Outputs

1 Features • 3-State outputs • Separate OE for all 4 buffers • Operates from 1.65V to 3.6V • Specified from –40°C to 85°C and –40°C to 125°C • Inputs accept voltages to 5.5V • Max tpd of 4.8ns at 3.3V • Typical VOLP (output ground bounce)

丝印代码：LC125A；SN74LVC125A Quadruple Bus Buffer Gate With 3-State Outputs

1 Features • 3-State outputs • Separate OE for all 4 buffers • Operates from 1.65V to 3.6V • Specified from –40°C to 85°C and –40°C to 125°C • Inputs accept voltages to 5.5V • Max tpd of 4.8ns at 3.3V • Typical VOLP (output ground bounce)

丝印代码：LC125A；SN74LVC125A Quadruple Bus Buffer Gate With 3-State Outputs

1 Features • 3-State outputs • Separate OE for all 4 buffers • Operates from 1.65V to 3.6V • Specified from –40°C to 85°C and –40°C to 125°C • Inputs accept voltages to 5.5V • Max tpd of 4.8ns at 3.3V • Typical VOLP (output ground bounce)

丝印代码：LC125A；SN74LVC125A Quadruple Bus Buffer Gate With 3-State Outputs

1 Features • 3-State outputs • Separate OE for all 4 buffers • Operates from 1.65V to 3.6V • Specified from –40°C to 85°C and –40°C to 125°C • Inputs accept voltages to 5.5V • Max tpd of 4.8ns at 3.3V • Typical VOLP (output ground bounce)

丝印代码：LC125A；SN74LVC125A Quadruple Bus Buffer Gate With 3-State Outputs

1 Features • 3-State outputs • Separate OE for all 4 buffers • Operates from 1.65V to 3.6V • Specified from –40°C to 85°C and –40°C to 125°C • Inputs accept voltages to 5.5V • Max tpd of 4.8ns at 3.3V • Typical VOLP (output ground bounce)

丝印代码：LC125A；SN74LVC125A Quadruple Bus Buffer Gate With 3-State Outputs

1 Features • 3-State outputs • Separate OE for all 4 buffers • Operates from 1.65V to 3.6V • Specified from –40°C to 85°C and –40°C to 125°C • Inputs accept voltages to 5.5V • Max tpd of 4.8ns at 3.3V • Typical VOLP (output ground bounce)

丝印代码：LC125A；SN74LVC125A Quadruple Bus Buffer Gate With 3-State Outputs

1 Features • 3-State outputs • Separate OE for all 4 buffers • Operates from 1.65V to 3.6V • Specified from –40°C to 85°C and –40°C to 125°C • Inputs accept voltages to 5.5V • Max tpd of 4.8ns at 3.3V • Typical VOLP (output ground bounce)

丝印代码：LC125A；SN74LVC125A Quadruple Bus Buffer Gate With 3-State Outputs

1 Features • 3-State outputs • Separate OE for all 4 buffers • Operates from 1.65V to 3.6V • Specified from –40°C to 85°C and –40°C to 125°C • Inputs accept voltages to 5.5V • Max tpd of 4.8ns at 3.3V • Typical VOLP (output ground bounce)

丝印代码：LC125A；SN74LVC125A Quadruple Bus Buffer Gate With 3-State Outputs

1 Features • 3-State outputs • Separate OE for all 4 buffers • Operates from 1.65V to 3.6V • Specified from –40°C to 85°C and –40°C to 125°C • Inputs accept voltages to 5.5V • Max tpd of 4.8ns at 3.3V • Typical VOLP (output ground bounce)

丝印代码：LC125A；SN74LVC125A Quadruple Bus Buffer Gate With 3-State Outputs

1 Features • 3-State outputs • Separate OE for all 4 buffers • Operates from 1.65V to 3.6V • Specified from –40°C to 85°C and –40°C to 125°C • Inputs accept voltages to 5.5V • Max tpd of 4.8ns at 3.3V • Typical VOLP (output ground bounce)

丝印代码：LC125A；SN74LVC125A Quadruple Bus Buffer Gate With 3-State Outputs

1 Features • 3-State outputs • Separate OE for all 4 buffers • Operates from 1.65V to 3.6V • Specified from –40°C to 85°C and –40°C to 125°C • Inputs accept voltages to 5.5V • Max tpd of 4.8ns at 3.3V • Typical VOLP (output ground bounce)

丝印代码：LC125A；SN74LVC125A Quadruple Bus Buffer Gate With 3-State Outputs

1 Features • 3-State outputs • Separate OE for all 4 buffers • Operates from 1.65V to 3.6V • Specified from –40°C to 85°C and –40°C to 125°C • Inputs accept voltages to 5.5V • Max tpd of 4.8ns at 3.3V • Typical VOLP (output ground bounce)

丝印代码：LC125AQ；SN74LVC125A-Q1 Automotive Quadruple Bus Buffer Gate With 3-State Outputs

1 Features • Qualified for automotive applications • Operates from 1.65V to 3.6V • Specified from –40°C to 125°C • Inputs accept voltages to 5.5V • Max tpd of 4.8ns at 3.3V • Typical VOLP (output ground bounce) 2V at VC

丝印代码：LC125AQ；SN74LVC125A-Q1 Automotive Quadruple Bus Buffer Gate With 3-State Outputs

1 Features • Qualified for automotive applications • Operates from 1.65V to 3.6V • Specified from –40°C to 125°C • Inputs accept voltages to 5.5V • Max tpd of 4.8ns at 3.3V • Typical VOLP (output ground bounce) 2V at VC

丝印代码：LC125AQ；SN74LVC125A-Q1 Automotive Quadruple Bus Buffer Gate With 3-State Outputs

1 Features • Qualified for automotive applications • Operates from 1.65V to 3.6V • Specified from –40°C to 125°C • Inputs accept voltages to 5.5V • Max tpd of 4.8ns at 3.3V • Typical VOLP (output ground bounce) 2V at VC

General Purpose Silicon Rectifier

Description: The NTE125 is a general purpose silicon rectifier in a DO41 case designed for low power and switching applications.

CERMAX XENON ARC LAMPS

Description The Cermax® xenon arc lamp is an innovative lamp design in the specialty lighting industry. These lamps were introduced in the early 1980’s and are now used in endo-scopes in most major hospitals worldwide, in high brightness projection display systems, and for a wide variety of other

P-channel enhancement mode MOS transistor

DESCRIPTION P-channel enhancement mode MOS transistor in an 8-pin plastic SO8 (SOT96-1) package. FEATURES • High-speed switching • No secondary breakdown • Very low on-resistance. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectification.

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12