High-Voltage, Current-Sink Output Driver

Overview The LB1731J is a 4-channel high-voltage current sink output driver. Inputs are active-low CMOS/TTL logic-level, and outputs are high-voltage open-collector NPN Darlington pairs. Each driver in the LB1731J sinks up to 1.5A and withstands collector voltages of up to 85V. The LB1731J is av

High-Voltage, Current-Sink Output Driver

High-Voltage, Current-Sink Output Driver???

Overview The LB1731 is a 4-channel high-voltage current sink output driver. Inputs are active-low CMOS/TTL logic-level, and outputs are high-voltage open-collector NPN Darlington pairs. Each driver in the LB1731 sinks up to 1.5A and withstands collector voltages of up to 85V. The LB1731 is avail

Integrated Circuit CMOS 10 Number Pulse Dialer

Description: The NTE1731 is a CMOS LSI repertory dialer with ten 16–digit number memory storage in a 16–Lead DIP type package. The pulse and mute signal outputs resulting from keyboard input are like those of a pulse dialer. The NTE1731 incorporates a 64 x 10 bit RAM which is used to store the

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1731 is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-resistance RDS(on)1 = 10.3 mΩ TYP. (VGS = –10 V, ID = –5.0 A) RDS(on)2 = 14.6 mΩ TYP. (VGS = –

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1731 is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-resistance RDS(on)1 = 10.3 mΩ TYP. (VGS = –10 V, ID = –5.0 A) RDS(on)2 = 14.6 mΩ TYP. (VGS = –