Dual AF Power Amplifier for Radio Cassette Recorders

Overview The LA4525 requires only a small number of external components to drive either two 4Ω speakers or one 8Ω speaker. The output power is typically 0.65W when driving two 4Ω speakers. Features • Two-channel (dual) or single-channel (BTL) operation • Requires only a few external components

Monolithic Linear IC For Radio Cassette Recorders Dual AF Power Amplifier

Overview\nThe LA4525 requires only a small number of external components to drive either two 4Ω speakers or one 8Ω speaker. The output power is typically 0.65W when driving two 4Ω speakers. • Two-channel (dual) or single-channel (BTL) operation\n• Requires only a few external components\n• 0.65W (typ) output power into two 4Ω speakers\n• Wide power supply range : 3 to 15V\n• 8-pin DIP (No heat sink needed);

For Radio Cassette Recorders Dual AF Power Amplifier

文件：490.06 Kbytes Page：8 Pages

For Radio Cassette Recorders Dual AF Power Amplifier

文件：490.06 Kbytes Page：8 Pages

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collecto

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Features exceptional tolerance to base drive and collector

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope with integrated damper diode intended intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional toleranc

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope with an integrated damper diode intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to b

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope with an integrated damper diode intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tole