Automotive Single/Dual H-Bridge, SPI programmable DC Brushed Motor Driver

Features  AEC-Q100 qualified  Flexible driving strategy via configurable pins PWM/DIR (IN1/IN2)  RDSon

Automotive Single/Dual H-Bridge, SPI programmable DC Brushed Motor Driver

Features  AEC-Q100 qualified  Flexible driving strategy via configurable pins PWM/DIR (IN1/IN2)  RDSon

Automotive Single/Dual H-Bridge, SPI programmable DC Brushed Motor Driver

Features  AEC-Q100 qualified  Flexible driving strategy via configurable pins PWM/DIR (IN1/IN2)  RDSon

Automotive Single/Dual H-Bridge, SPI programmable DC Brushed Motor Driver

Features  AEC-Q100 qualified  Flexible driving strategy via configurable pins PWM/DIR (IN1/IN2)  RDSon

Battery management system solution

Features • 2 μA shipment - DEEP SLEEP mode current and 5 μA standby consumption (with VREG LDO active) standby consumption (with VREG LDO active) • Integrated 3.3 V VREG LDO for supplying MCU and LEDs • Measures cell voltage (3 to 5 cells), with over/undervoltage detection and balance undervo

Battery management system solution

Features • 2 μA shipment - DEEP SLEEP mode current and 5 μA standby consumption (with VREG LDO active) standby consumption (with VREG LDO active) • Integrated 3.3 V VREG LDO for supplying MCU and LEDs • Measures cell voltage (3 to 5 cells), with over/undervoltage detection and balance undervo

Battery management system solution

Features • 2 μA shipment - DEEP SLEEP mode current and 5 μA standby consumption (with VREG LDO active) standby consumption (with VREG LDO active) • Integrated 3.3 V VREG LDO for supplying MCU and LEDs • Measures cell voltage (3 to 5 cells), with over/undervoltage detection and balance undervo

Battery management system solution

Features • 2 μA shipment - DEEP SLEEP mode current and 5 μA standby consumption (with VREG LDO active) standby consumption (with VREG LDO active) • Integrated 3.3 V VREG LDO for supplying MCU and LEDs • Measures cell voltage (3 to 5 cells), with over/undervoltage detection and balance undervo

Battery management system solution

Features • 2 μA shipment - DEEP SLEEP mode current and 5 μA standby consumption (with VREG LDO active) standby consumption (with VREG LDO active) • Integrated 3.3 V VREG LDO for supplying MCU and LEDs • Measures cell voltage (3 to 5 cells), with over/undervoltage detection and balance undervo

Automotive Multicell battery monitoring and balancing IC

Features • AEC-Q100 qualified • Measures 4 to 14 cells in series, with 0 μs desynchronization delay between samples. Supports also busbar connection without altering cell results • Coulomb counter supporting pack overcurrent detection in both ignition on and off states. Fully synchronized cur

Automotive Multicell battery monitoring and balancing IC

Features • AEC-Q100 qualified • Measures 4 to 14 cells in series, with 0 μs desynchronization delay between samples. Supports also busbar connection without altering cell results • Coulomb counter supporting pack overcurrent detection in both ignition on and off states. Fully synchronized cur

Automotive Multicell battery monitoring and balancing IC

Features • AEC-Q100 qualified • Measures 4 to 14 cells in series, with 0 μs desynchronization delay between samples. Supports also busbar connection without altering cell results • Coulomb counter supporting pack overcurrent detection in both ignition on and off states. Fully synchronized cur

Automotive general purpose SPI to isolated SPI transceiver

Features • AEC-Q100 qualified • Full ISO26262 compliant, ASIL-D systems ready • Compatible with both 3.3 V and 5 V logics • Supports both XFMR and Capacitive isolation • 10 MHz SPI peripheral for SPI Slave operation. Configurable SPI frequency (250 kHz to 8 MHz) for SPI Master operation • 3

Automotive general purpose SPI to isolated SPI transceiver

Features • AEC-Q100 qualified • Full ISO26262 compliant, ASIL-D systems ready • Compatible with both 3.3 V and 5 V logics • Supports both XFMR and Capacitive isolation • 10 MHz SPI peripheral for SPI Slave operation. Configurable SPI frequency (250 kHz to 8 MHz) for SPI Master operation • 3

Automotive single channel pyro-fuse driver

Features • AEC-Q100 grade 1 qualified • Full ISO26262 compliant, ASIL-D systems ready • Very low power consumption: – Less than 10 μA in deep-sleep mode (only trigger detection enabled) – Less than 4 mA in low-power mode (trigger detection enabled, ER boost recharge active, cyclic diagnostic

Automotive single channel pyro-fuse driver

Features • AEC-Q100 grade 1 qualified • Full ISO26262 compliant, ASIL-D systems ready • Very low power consumption: – Less than 10 μA in deep-sleep mode (only trigger detection enabled) – Less than 4 mA in low-power mode (trigger detection enabled, ER boost recharge active, cyclic diagnostic

Automotive single channel pyro-fuse driver

Features • AEC-Q100 grade 1 qualified • Full ISO26262 compliant, ASIL-D systems ready • Very low power consumption: – Less than 10 μA in deep-sleep mode (only trigger detection enabled) – Less than 4 mA in low-power mode (trigger detection enabled, ER boost recharge active, cyclic diagnostic

Automotive single channel pyro-fuse driver

Features • AEC-Q100 grade 1 qualified • Full ISO26262 compliant, ASIL-D systems ready • Very low power consumption: – Less than 10 μA in deep-sleep mode (only trigger detection enabled) – Less than 4 mA in low-power mode (trigger detection enabled, ER boost recharge active, cyclic diagnostic

Automotive single channel pyro-fuse driver

Features • AEC-Q100 grade 1 qualified • Full ISO26262 compliant, ASIL-D systems ready • Very low power consumption: – Less than 10 μA in deep-sleep mode (only trigger detection enabled) – Less than 4 mA in low-power mode (trigger detection enabled, ER boost recharge active, cyclic diagnostic

Automotive SPI to isolated SPI transceiver

Features • AEC-Q100 qualified • Temperature grade 1: -40°C to +125°C operating temperature range • HBM ESD classification level 2 • CDM ESD classification level C4B • Full ISO26262 compliant, ASIL-D systems ready, documentation available • Automatic wake-up of BMS/BMU MCU and PMIC from SHUTD

Automotive SPI to isolated SPI transceiver

Features • AEC-Q100 qualified • Temperature grade 1: -40°C to +125°C operating temperature range • HBM ESD classification level 2 • CDM ESD classification level C4B • Full ISO26262 compliant, ASIL-D systems ready, documentation available • Automatic wake-up of BMS/BMU MCU and PMIC from SHUTD

Automotive SPI to isolated SPI transceiver

Features • AEC-Q100 qualified • Temperature grade 1: -40°C to +125°C operating temperature range • HBM ESD classification level 2 • CDM ESD classification level C4B • Full ISO26262 compliant, ASIL-D systems ready, documentation available • Automatic wake-up of BMS/BMU MCU and PMIC from SHUTD

Automotive SPI to isolated SPI transceiver

Features • AEC-Q100 qualified • Temperature grade 1: -40°C to +125°C operating temperature range • HBM ESD classification level 2 • CDM ESD classification level C4B • Full ISO26262 compliant, ASIL-D systems ready, documentation available • Automatic wake-up of BMS/BMU MCU and PMIC from SHUTD

FlexInput IC for automotive applications

Features • AEC-Q100 qualified • 12 V and 24 V systems compatible (operating battery supply voltage 5.5 V-36 V) • Programmable interface with 15 total inputs: – 12 for connection to external analog loads (with connection to VVAR, VDD5 and clamped battery VPRE, with resistance measurement) ◦ 4

FlexInput IC for automotive applications

Features • AEC-Q100 qualified • 12 V and 24 V systems compatible (operating battery supply voltage 5.5 V-36 V) • Programmable interface with 15 total inputs: – 12 for connection to external analog loads (with connection to VVAR, VDD5 and clamped battery VPRE, with resistance measurement) ◦ 4

Automotive chip for single and dual H-bridge

Features • AEC-Q100 qualification ongoing • Full path RDSON less than 540 mΩ • Nominal continuous load current > 3 A • Operating battery supply voltage 4.5 V to 28 V • Operating VDD supply voltage 4.5 V to 5.5 V • All ECU internal pins can withstand up to 18 V • Output switching frequency u

Automotive chip for single and dual H-bridge

Features • AEC-Q100 qualified • Full path RDS(on) less than 540 mΩ • Nominal continuous load current > 3 A • Operating battery supply voltage 4.5 V to 28 V • Operating VDD supply voltage 4.5 V to 5.5 V • All ECU internal pins can withstand up to 18 V • Output switching frequency up to 20 kH

Automotive chip for single and dual H-bridge

Features • AEC-Q100 qualified • Full path RDS(on) less than 540 mΩ • Nominal continuous load current > 3 A • Operating battery supply voltage 4.5 V to 28 V • Operating VDD supply voltage 4.5 V to 5.5 V • All ECU internal pins can withstand up to 18 V • Output switching frequency up to 20 kH

Automotive chip for single and dual H-bridge

Features • AEC-Q100 qualification ongoing • Full path RDSON less than 540 mΩ • Nominal continuous load current > 3 A • Operating battery supply voltage 4.5 V to 28 V • Operating VDD supply voltage 4.5 V to 5.5 V • All ECU internal pins can withstand up to 18 V • Output switching frequency u

Automotive chip for single and dual H-bridge

Features • AEC-Q100 qualified • Full path RDS(on) less than 540 mΩ • Nominal continuous load current > 3 A • Operating battery supply voltage 4.5 V to 28 V • Operating VDD supply voltage 4.5 V to 5.5 V • All ECU internal pins can withstand up to 18 V • Output switching frequency up to 20 kH

Automotive chip for single and dual H-bridge

Features • AEC-Q100 qualification ongoing • Full path RDSON less than 540 mΩ • Nominal continuous load current > 3 A • Operating battery supply voltage 4.5 V to 28 V • Operating VDD supply voltage 4.5 V to 5.5 V • All ECU internal pins can withstand up to 18 V • Output switching frequency u

Automotive chip for single and dual H-bridge

Features • AEC-Q100 qualification ongoing • Full path RDSON less than 540 mΩ • Nominal continuous load current > 3 A • Operating battery supply voltage 4.5 V to 28 V • Operating VDD supply voltage 4.5 V to 5.5 V • All ECU internal pins can withstand up to 18 V • Output switching frequency u

Automotive chip for single and dual H-bridge

Features • AEC-Q100 qualified • Full path RDS(on) less than 540 mΩ • Nominal continuous load current > 3 A • Operating battery supply voltage 4.5 V to 28 V • Operating VDD supply voltage 4.5 V to 5.5 V • All ECU internal pins can withstand up to 18 V • Output switching frequency up to 20 kH

Automotive chip for single and dual H-bridge

Features • AEC-Q100 qualified • Full path RDS(on) less than 540 mΩ • Nominal continuous load current > 3 A • Operating battery supply voltage 4.5 V to 28 V • Operating VDD supply voltage 4.5 V to 5.5 V • All ECU internal pins can withstand up to 18 V • Output switching frequency up to 20 kH

Automotive chip for battery management applications

文件：440.63 Kbytes Page：11 Pages

Automotive Multicell battery monitoring and balancing IC

文件：9.80121 Mbytes Page：184 Pages

Automotive Multicell battery monitoring and balancing IC

文件：9.80121 Mbytes Page：184 Pages

封装/外壳：64-TQFP 裸露焊盘 功能：电池监控器 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：AUTOMOTIVE CHIP FOR BATTERY MANA 集成电路（IC） 电池管理

封装/外壳：64-TQFP 裸露焊盘 功能：电池监控器 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC BATT MON LI-ION 4-14CL 64TQFP 集成电路（IC） 电池管理

红外发射管

发光二极管/LED

发光二极管/LED

Using the Fairchild FST Bus Switch as a 5V to 3V Translator

Introduction Fairchild FST Bus Switches can be used for bi-directional translators. They can interface 5V components to 3V components with negligible propagation delay (tPD ≤ 250ps) and minimal power dissipation (ICC ≤ 10µA). As the number of systems that interface between 5V and 3.3V levels inc

N-channel dual-gate MOS-FET

DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • RF applications such a

N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • RF applications such a

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features ● Integrated gate protection diodes ● Low noise figure ● Low feedback capacitance ● High cross modulation performance ● Low input capacitance ● High AGC-range Applications Input and mixer stages in UHF tuner.

Silicon N Channel MOSFET Tetrode (For input stages in UHF TV tuners High transconductance Low noise figure)

Silicon N Channel MOSFET Tetrode ● For input stages in UHF TV tuners ● High transconductance ● Low noise figure