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L63价格

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型号：L631DR 品牌：Lighting Comp Design 备注：这里有L63多少钱，2025年最近7天走势，今日出价，今日竞价，L63批发/采购报价，L63行情走势销售排行榜，L63报价。

型号	功能描述	生产厂家&企业
L63	Front panel mounting 文件：371.06 Kbytes Page：4 Pages	VCC Visual Communications Company
L631	Power Modules •LowProfile •7DifferentCircuitstoChoosefrom •DesignedforPrintedCircuitBoardConnections	crydom Crydom Inc.,
L631F	Power Modules •LowProfile •7DifferentCircuitstoChoosefrom •DesignedforPrintedCircuitBoardConnections	crydom Crydom Inc.,
L632	Power Modules •LowProfile •7DifferentCircuitstoChoosefrom •DesignedforPrintedCircuitBoardConnections	crydom Crydom Inc.,
L6326	2 CHANNEL VOLTAGE SENSE AMR/GMR PREAMPLIFIERS DESCRIPTION TheL6326isatwochannelBICMOSmonolithicintegratedcircuitGMRpre-amplifierdesignedforusewithfour-terminalmagneto-resistive(AMRandGMRheads)read/inductivewriteheads.Thedeviceconsistsofavoltagesensecurrentbiasorvoltagebias(selectable),singleendedinput/	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6327	6 / 4 CHANNEL VOLTAGE SENSE GMR PREAMPLIFIER DESCRIPTION L6327/L6332isaBICMOSmonolithicintegratedcircuitGMRdifferentialpreamplifierdesignedforusewithfour-terminalmagneto-resistiveGMRread/inductivewriteheads.Itisavailableaseitherasix(L6327)orfour(L6332)channeldevice.Thedevicesconsistofavoltage-sense,cur	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L632F	Power Modules •LowProfile •7DifferentCircuitstoChoosefrom •DesignedforPrintedCircuitBoardConnections	crydom Crydom Inc.,
L633	Power Modules •LowProfile •7DifferentCircuitstoChoosefrom •DesignedforPrintedCircuitBoardConnections	crydom Crydom Inc.,
L6332	6 / 4 CHANNEL VOLTAGE SENSE GMR PREAMPLIFIER DESCRIPTION L6327/L6332isaBICMOSmonolithicintegratedcircuitGMRdifferentialpreamplifierdesignedforusewithfour-terminalmagneto-resistiveGMRread/inductivewriteheads.Itisavailableaseitherasix(L6327)orfour(L6332)channeldevice.Thedevicesconsistofavoltage-sense,cur	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L633F	Power Modules •LowProfile •7DifferentCircuitstoChoosefrom •DesignedforPrintedCircuitBoardConnections	crydom Crydom Inc.,
L634	THREE PHASE MOTOR DRIVER DESCRIPTION TheL6234isatriplehalfbridgetodriveabrushlessmotor. ItisrealizedinMultipowerBCDtechnologywhichcombinesisolatedDMOSpowertransistorswithCMOSandBipolarcircuitsonthesamechip. Byusingmixedtechnologyithasbeenpossibletooptimizethelogiccircuitryan	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L634	Power Modules •LowProfile •7DifferentCircuitstoChoosefrom •DesignedforPrintedCircuitBoardConnections	crydom Crydom Inc.,
L634F	Power Modules •LowProfile •7DifferentCircuitstoChoosefrom •DesignedforPrintedCircuitBoardConnections	crydom Crydom Inc.,
L6353	SMART DRIVER FOR POWER MOS & IGBT DESCRIPTION TheL6353deviceisasmartdriver,withallthedriveandprotectionknow-how”onboard”.AvailableinbothDIPandSOpackage,itcanbetriggeredwithalogiclevelorwiththesignalfromanoptocouplerorapulsetransformer.ItfiltersparasiticinputsignalsanddrivesanyMOSor	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6353D	SMART DRIVER FOR POWER MOS & IGBT DESCRIPTION TheL6353deviceisasmartdriver,withallthedriveandprotectionknow-how”onboard”.AvailableinbothDIPandSOpackage,itcanbetriggeredwithalogiclevelorwiththesignalfromanoptocouplerorapulsetransformer.ItfiltersparasiticinputsignalsanddrivesanyMOSor	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6360	IO-Link communication master transceiver IC Description TheL6360isamonolithicIO-LinkmasterportcompliantwithPHY2(3-wire)supportingCOM1(4.8kbaud),COM2(38.4kbaud)andCOM3(230.4kbaud)modes.TheC/QOoutputstageisprogrammable:high-side,low-sideorpush-pull;alsocut-offcurrent,cut-offcurrentdelaytime,andrestar	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6362	Fully integrated device transceiver IC Description TheL6362isamonolithicdualpushpullTransceiverfullycomplianttoPHY2(3wires)supportingCOM1(4.8kbaud),COM2(38.4kbaud)andCOM3(230.4kbaud)modes.C/QandI/Qoutputstagesareprogrammable:high-side,low-sideorpush-pull;alsocut-offcurrentandcutoffcurrentd	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6362A	IO-Link (PHY) device evaluation board based on L6362A with Arduino connectors for STM32 Nucleo Features •L6362AIO-Linkdevicetransceivermaincharacteristics: –IO-LinkPHYlayer –Dedicatedoverloaddiagnosticspin –UARTinterface –Selectable12mA3.3Vor10mA5.0Vlinearregulator –Overloadandoverheatingprotectionswithnon-dissipativecut-offfunction –Fullreversep	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6363	PRML READ/WRITE CHANNEL DESCRIPTION L6363isa0.18µmCMOSPRMLR/Wchannelsupportingdataratesupto750Mb/secwithServoDemodulation,ClockSynthesis,ChannelQualityMonitorforchanneloptimizationandDiskSurfaceDefectScancapability ■SIGNALPROCESSING –PR4signalequalizationandloops –8thorder	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6364	Dual channel transceiver IC for SIO and IO-Link sensor applications Features •Supplyvoltagefrom5Vto35V •2.5Vto5VcompatibleI/Os •3.3Vand5V,50mAlinearregulators •50mADC-DCregulatorwithconfigurablefrequency(0.5MHzto2MHz)& voltage(5Vto10.5V) •Lowdissipative(5Ω)CQandDIOoutputstagesconfigurableinhighside,low	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6370	2.5A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH DESCRIPTION TheL6370isamonolithicIntelligentPowerSwitchinMultipowerBCDTechnology,fordrivinginductiveorresistiveloads.AninternalClampingDiodeenablesthefastdemagnetizationofinductiveloads.DiagnosticforCPUfeedbackandextensiveuseofelectricalprotectionsmakethis	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6370D	2.5A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH DESCRIPTION TheL6370isamonolithicIntelligentPowerSwitchinMultipowerBCDTechnology,fordrivinginductiveorresistiveloads.AninternalClampingDiodeenablesthefastdemagnetizationofinductiveloads.DiagnosticforCPUfeedbackandextensiveuseofelectricalprotectionsmakethis	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6370L	2.5A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH DESCRIPTION TheL6370isamonolithicIntelligentPowerSwitchinMultipowerBCDTechnology,fordrivinginductiveorresistiveloads.AninternalClampingDiodeenablesthefastdemagnetizationofinductiveloads.DiagnosticforCPUfeedbackandextensiveuseofelectricalprotectionsmakethis	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6370Q	2.5 A single high-side smart power switch Description TheL6370QisamonolithicintelligentpowerswitchinBCDmultipowertechnologytodriveinductiveorresistiveloads.Aninternalclampingdiodeenablesthefastdemagnetizationofinductiveloads.DiagnosticforCPUfeedbackandextensiveuseofelectricalprotectionsmakethisdevi	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6370Q	2.5 A single high-side smart power switch Description TheL6370QisamonolithicintelligentpowerswitchinBCDmultipowertechnologytodriveinductiveorresistiveloads.Aninternalclampingdiodeenablesthefastdemagnetizationofinductiveloads.DiagnosticforCPUfeedbackandextensiveuseofelectricalprotectionsmakethisdevi	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6370QTR	2.5 A single high-side smart power switch Description TheL6370QisamonolithicintelligentpowerswitchinBCDmultipowertechnologytodriveinductiveorresistiveloads.Aninternalclampingdiodeenablesthefastdemagnetizationofinductiveloads.DiagnosticforCPUfeedbackandextensiveuseofelectricalprotectionsmakethisdevi	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6372	Dual N-Channel 30 V (D-S) MOSFET FEATURES •TrenchFETPowerMOSFET •100%RgTested •100%UISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •NotebookSystemPower •LowCurrentDC/DC	VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司
L6374	INDUSTRIAL QUAD LINE DRIVER Description TheL6374isespeciallydesignedtobeusedasalinedriverinindustrialcontrolsystemsbasedonthe24Vsignallevels(IEC61131,24VDC). Features ■Fourindependentlinedriverswith100mAupto35Voutputs ■Inputsignalsbetween-7Vand+35V,withpre-settin	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6374DP	INDUSTRIAL QUAD LINE DRIVER Description TheL6374isespeciallydesignedtobeusedasalinedriverinindustrialcontrolsystemsbasedonthe24Vsignallevels(IEC61131,24VDC). Features ■Fourindependentlinedriverswith100mAupto35Voutputs ■Inputsignalsbetween-7Vand+35V,withpre-settin	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6374FP	INDUSTRIAL QUAD LINE DRIVER Description TheL6374isespeciallydesignedtobeusedasalinedriverinindustrialcontrolsystemsbasedonthe24Vsignallevels(IEC61131,24VDC). Features ■Fourindependentlinedriverswith100mAupto35Voutputs ■Inputsignalsbetween-7Vand+35V,withpre-settin	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6375	0.5A INDUSTRIAL INTELLIGENT POWER SWITCH DESCRIPTION TheL6375isamonolithicfullyprotected,fulldiagnostic0.5AIntelligentPowerSwitch.itisdesignedtodriveanykindofR-L-Cloadwithcontrolledoutputvoltageslewrateandnondissipativeshortcircuitprotection.AninternalClampingDiodeenablesthefastdemagnetization	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6375D	0.5A INDUSTRIAL INTELLIGENT POWER SWITCH DESCRIPTION TheL6375isamonolithicfullyprotected,fulldiagnostic0.5AIntelligentPowerSwitch.itisdesignedtodriveanykindofR-L-Cloadwithcontrolledoutputvoltageslewrateandnondissipativeshortcircuitprotection.AninternalClampingDiodeenablesthefastdemagnetization	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6375D	0.5A high-side driver industrial intelligent power switch Description TheL6375DisamonolithicIntelligentPowerSwitchinMultipowerBCDTechnology,fordrivinginductiveorresistiveloadswithcontrolledoutputvoltageslewrateandshortcircuitprotection. AninternalClampingDiodeenablesthefastdemagnetizationofinductiveloads.Diagno	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6375DTR	0.5A high-side driver industrial intelligent power switch Description TheL6375DisamonolithicIntelligentPowerSwitchinMultipowerBCDTechnology,fordrivinginductiveorresistiveloadswithcontrolledoutputvoltageslewrateandshortcircuitprotection. AninternalClampingDiodeenablesthefastdemagnetizationofinductiveloads.Diagno	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6375S	0.5A high-side driver industrial intelligent power switch Description TheL6375SisamonolithicIntelligentPowerSwitchinMultipowerBCDTechnology,fordrivinginductiveorresistiveloadswithcontrolledoutputvoltageslewrateandshortcircuitprotection. AninternalClampingDiodeenablesthefastdemagnetizationofinductiveloads.Diagno	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6375STR	0.5A high-side driver industrial intelligent power switch Description TheL6375SisamonolithicIntelligentPowerSwitchinMultipowerBCDTechnology,fordrivinginductiveorresistiveloadswithcontrolledoutputvoltageslewrateandshortcircuitprotection. AninternalClampingDiodeenablesthefastdemagnetizationofinductiveloads.Diagno	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6376	0.5A HIGH-SIDE DRIVER QUAD INTELLIGENT POWER SWITCH Description ThisdeviceisamonolithicquadintelligentpowerswitchinmultipowerBCDtechnology,fordrivinginductive,capacitiveorresistiveloads.DiagnosticforCPUfeedbackandextensiveuseofelectricalprotectionsmakethisdeviceinherentlyindistructibleandsuitableforgeneralpur	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6376PD	0.5A HIGH-SIDE DRIVER QUAD INTELLIGENT POWER SWITCH Description ThisdeviceisamonolithicquadintelligentpowerswitchinmultipowerBCDtechnology,fordrivinginductive,capacitiveorresistiveloads.DiagnosticforCPUfeedbackandextensiveuseofelectricalprotectionsmakethisdeviceinherentlyindistructibleandsuitableforgeneralpur	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6377	0.5A HIGH-SIDE DRIVER INTELLIGENT POWER SWITCH Description ThisdeviceisamonolithicintelligentpowerswitchinmultipowerBCDtechnologyfordrivinginductive,capacitiveorresistiveloads. DiagnosticforCPUfeedbackandextensiveuseofelectricalprotectionsmakethisdeviceinherentlyindistructibleandsuitableforgeneralpurpose	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6377D	0.5A HIGH-SIDE DRIVER INTELLIGENT POWER SWITCH Description ThisdeviceisamonolithicintelligentpowerswitchinmultipowerBCDtechnologyfordrivinginductive,capacitiveorresistiveloads. DiagnosticforCPUfeedbackandextensiveuseofelectricalprotectionsmakethisdeviceinherentlyindistructibleandsuitableforgeneralpurpose	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6382D	Power management unit for microcontrolled ballast Description TheL6382DdeviceissuitableforLEDdriversembeddingaPFCstageandahalf-bridgestage.TheL6382Dincludes4MOSFETdrivingstages(forthePFC,forthehalf-bridge,andfortheauxiliaryMOSFET)plusapowermanagementunit(PMU)featuringalsoareferenceabletosupplythemi	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6382D5	Power management unit for microcontrolled ballast Description TheL6382D5issuitableformicrocontrolledelectronicballastsembeddingaPFCstageandahalf-bridgestage.TheL6382D5includes4MOSFETdrivingstages(forthePFC,forthehalfbridge,forthepreheatingMOSFET)plusapowermanagementunit(PMU)featuringalsoareferenceable	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6382D5TR	Power management unit for microcontrolled ballast Description TheL6382D5issuitableformicrocontrolledelectronicballastsembeddingaPFCstageandahalf-bridgestage.TheL6382D5includes4MOSFETdrivingstages(forthePFC,forthehalfbridge,forthepreheatingMOSFET)plusapowermanagementunit(PMU)featuringalsoareferenceable	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6382DTR	Power management unit for microcontrolled ballast Description TheL6382DdeviceissuitableforLEDdriversembeddingaPFCstageandahalf-bridgestage.TheL6382Dincludes4MOSFETdrivingstages(forthePFC,forthehalf-bridge,andfortheauxiliaryMOSFET)plusapowermanagementunit(PMU)featuringalsoareferenceabletosupplythemi	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6384	HIGH-VOLTAGE HALF BRIDGE DRIVER DESCRIPTION TheL6384isanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasanHalf-BridgeDriverstructurethatenablestodriveNChannelPowerMOSorIGBT.TheUpper(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputsareCMOS/TTLco	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6384D	HIGH-VOLTAGE HALF BRIDGE DRIVER DESCRIPTION TheL6384isanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasanHalf-BridgeDriverstructurethatenablestodriveNChannelPowerMOSorIGBT.TheUpper(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputsareCMOS/TTLco	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6384E	High-voltage half bridge driver Description TheL6384Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasanHalf-BridgeDriverstructurethatenablestodriveN-channelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputsareCMOS	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6384ED	High-voltage half bridge driver Description TheL6384Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasanHalf-BridgeDriverstructurethatenablestodriveN-channelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputsareCMOS	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6384ED013TR	High-voltage half bridge driver Description TheL6384Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasanHalf-BridgeDriverstructurethatenablestodriveN-channelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputsareCMOS	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6385	HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER DESCRIPTION TheL6385isanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasaDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheUpper(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputsareCM	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6385D	HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER DESCRIPTION TheL6385isanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasaDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheUpper(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputsareCM	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6385E	High-voltage high and low side driver Description TheL6385Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasanHalf-BridgeDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.Th	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6385E	High-voltage high and low side driver Description TheL6385Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasanHalf-BridgeDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.Th	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6385ED	High-voltage high and low side driver Description TheL6385Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasanHalf-BridgeDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.Th	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6385ED	High-voltage high and low side driver Description TheL6385Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasanHalf-BridgeDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.Th	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6385ED013TR	High-voltage high and low side driver Description TheL6385Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasanHalf-BridgeDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.Th	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6385ED013TR	High-voltage high and low side driver Description TheL6385Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasanHalf-BridgeDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.Th	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6386	HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER DESCRIPTION TheL6386isanhigh-voltagedevice,manufacturedwiththeBCD”OFF-LINE”technology.IthasaDriverstructurethatenablestodriveindependentreferencedChannelPowerMOSorIGBT.TheUpper(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputsareCM	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6386AD	High-voltage high and low side driver Description TheL6386ADisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasadriverstructurethatenablestodriveindependentreferencedChannelPowerMOSorIGBT.Thehigh-side(floating)sectionisenabledtoworkwithvoltagerailupto600V.TheLogicInputs	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
L6386AD013TR	High-voltage high and low side driver Description TheL6386ADisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasadriverstructurethatenablestodriveindependentreferencedChannelPowerMOSorIGBT.Thehigh-side(floating)sectionisenabledtoworkwithvoltagerailupto600V.TheLogicInputs	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团

L63产品属性

类型
描述
型号
L63
功能描述
Optoelectronic

L63供应商更多...

更新时间：2025-7-28 20:12:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	L6388ED013TR	ST/意法	25+	SOP-8	32000	ST/意法全新特价L6388ED013TR即刻询购立享优惠#长期有货	询价
深圳市金芯世纪电子有限公司	L6388ED013TR	ST/意法	22+		1000000		询价
深圳市科芯源微电子有限公司	L6300	ST/意法	25+	SOP	54648	百分百原装现货实单必成欢迎询价	询价
深圳市明嘉莱科技有限公司	L6388ED013TR	ST/意法	25+	SOP8	918000	明嘉莱只做原装正品现货	询价
深圳市富达微科技有限公司	L6395DTR	ST/意法半导体	24+	SMD/SMT	16900	原装，正品	询价
深圳市华睿芯科技有限公司	L6385D013TR	ST	24+	SOP	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
深圳市威雅利发展有限公司	L6398DTR	ST	17+	SOP	2505	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市弘扬芯城科技有限公司	L6388ED013TR	ST(意法半导体)	2024+	NA	500000	诚信服务,绝对原装原盘	询价
深圳市诚利顺电子科技有限公司	L6387D	JRC/新日本无线	23+	DIP8	9600	十七年VIP会员,诚信经营，一手货源，原装正品可零售！	询价
深圳市润联芯城科技有限公司	L6388ED013TR	STM	23+	SO-8	50000	原装正品支持实单	询价

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描述该L6353设备是智能驱动，所有的驱动和保护知识“已装船“。在这两个DIP和SO封装，可触发的逻辑电平或从一个信号optocoupleror脉冲变压器。它过滤寄生输入信号和驱动器的任何MOSor的IGBT。特点峰高输出电流能力(+8A)宽电源电压范围（12.5至18V的）0至-7.5V的负偏压电源范围过电流和饱和度下降保护的外部电源设备（外部可编程）闭锁保护（IGBT）的两步开启（可编程）正电源防护欠压使用光耦器兼容输入
2013-2-28
L6370-2.5A的高边驱动器工业智能功率开关
L6370是一款单片智能功率BCD技术在移动电站开关，驾驶感性或阻性负载。一个内部钳位二极管可以归纳快速退磁负载。CPU的反馈和广泛的诊断使用电器的保护，使该器件非常坚固耐用，特别适合工业自动化应用。特点*2.5A输出电流*9.5V至35V电源VOLTAGERANGE*内部电流限制*热关断*空地保护*内部负电压钳位，以VS-50V快速退磁*与大共模范围和阈值迟滞差分输入*UNDERVOLTAGELOCKOUTWITHHYSTERESI
2012-11-13

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