WHITE LED STEP-UP  CONVERTER

The UTC L5109 is an inductor-based DC/DC converterdesigned to drive up to six white LEDs in series or 2 rows orLEDs with 5 for each in parallel for backlight. Only one feedbackresistor is needed to control the LED current and obtain requiredbrightness. Inherently Uniform LED Current \n High Efficiency up to 83.5% \n No Need for External Schottky Diode \n Over Output Voltage Protection \n OVP \n 1.2MHz Switching Frequency;

High Voltage 1-A Peak Half-Bridge Gate Driver

文件：1.39566 Mbytes Page：24 Pages

丝印代码：L5109AMA；LM5109A High Voltage 1A Peak Half Bridge Gate Driver

1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1A peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 108V DC • Fast Propagation Times (30 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • E

丝印代码：L5109AMA；LM5109A High Voltage 1A Peak Half Bridge Gate Driver

1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1A peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 108V DC • Fast Propagation Times (30 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • E

丝印代码：L5109AMA；LM5109A High Voltage 1A Peak Half Bridge Gate Driver

1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1A peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 108V DC • Fast Propagation Times (30 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • E

丝印代码：L5109AMA；LM5109A High Voltage 1A Peak Half Bridge Gate Driver

1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1A peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 108V DC • Fast Propagation Times (30 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • E

丝印代码：L5109AMA；LM5109A High Voltage 1A Peak Half Bridge Gate Driver

1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1A peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 108V DC • Fast Propagation Times (30 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • E

丝印代码：L5109AMA；LM5109A High Voltage 1A Peak Half Bridge Gate Driver

1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1A peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 108V DC • Fast Propagation Times (30 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • E

丝印代码：L5109BMA；LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver

1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri

丝印代码：L5109BMA；LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver

1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri

丝印代码：L5109BMA；LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver

1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri

丝印代码：L5109Q；LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output

丝印代码：L5109Q；LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output

丝印代码：L5109Q；LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output

丝印代码：L5109Q；LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output

丝印代码：L5109Q；LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output

丝印代码：L5109Q；LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output

丝印代码：L5109MA；LM5109 100V/1A Peak Half Bridge Gate Driver

1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times •

丝印代码：L5109MA；LM5109 100V/1A Peak Half Bridge Gate Driver

1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times •

丝印代码：L5109MA；LM5109 100V/1A Peak Half Bridge Gate Driver

1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times •

丝印代码：L5109MA；LM5109 100V/1A Peak Half Bridge Gate Driver

1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times •

丝印代码：L5109MA；LM5109 100V/1A Peak Half Bridge Gate Driver

1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times •

丝印代码：L5109MA；LM5109 100V/1A Peak Half Bridge Gate Driver

1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times •

丝印代码：L5109MA；LM5109 100V/1A Peak Half Bridge Gate Driver

1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times •

丝印代码：L5109MA；LM5109 100V/1A Peak Half Bridge Gate Driver

1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times •

丝印代码：L5109MA；LM5109 100V/1A Peak Half Bridge Gate Driver

1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times •

丝印代码：L5109MA；LM5109 100V/1A Peak Half Bridge Gate Driver

1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times •

Inherently Uniform LED Current

文件：190.47 Kbytes Page：4 Pages

Ka-Band 3-Stage Self Bias Low Noise Amplifier

DESCRIPTION The MGFC5109 is a GaAs MMIC chip especially designed for 27.0 ~ 30.0 GHz band Low Noise Amplifier.(LNA) . FEATURES ● RF frequency : 27.0 to 30.0 GHz ● Super Low Noise NF=2.5dB (TYP.)

1 AMP POSITIVE STEP-DOWN INTEGRATED SWITCHING REGULATOR

文件：170.58 Kbytes Page：7 Pages

1 AMP POSITIVE STEP-DOWN INTEGRATED SWITCHING REGULATOR

文件：170.58 Kbytes Page：7 Pages

1 AMP POSITIVE STEP-DOWN INTEGRATED SWITCHING REGULATOR

文件：170.58 Kbytes Page：7 Pages

1 AMP POSITIVE STEP-DOWN INTEGRATED SWITCHING REGULATOR

文件：170.58 Kbytes Page：7 Pages