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位置：首页 > IC中文资料第9538页 > L2S

L2S价格

参考价格：￥0.1381

型号：L2SC1623RLT1G 品牌：LESHAN RADIO CO. 备注：这里有L2S多少钱，2025年最近7天走势，今日出价，今日竞价，L2S批发/采购报价，L2S行情走势销售排行榜，L2S报价。
型号 功能描述 生产厂家&企业 LOGO 操作
L2SA1036KLT1

Medium Power Transistor(-32V, -0.5A)

Features 1)LargeIC. ICMax.=-500mA 2)LowVCE(sat).Idealforlow-voltage operation. 3)Pb-FreePackageMaybeAvailable. TheG.SuffixDenotesaPb-FreeLeadFinish

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SA1036KLT1G

Medium Power Transistor(-32V, -0.5A)

Features 1)LargeIC. ICMax.=-500mA 2)LowVCE(sat).Idealforlow-voltage operation. 3)Pb-FreePackageMaybeAvailable. TheG.SuffixDenotesaPb-FreeLeadFinish

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SA1036KPLT1

Medium Power Transistor(-32V, -0.5A)

Features 1)LargeIC. ICMax.=-500mA 2)LowVCE(sat).Idealforlow-voltage operation. 3)Pb-FreePackageMaybeAvailable. TheG.SuffixDenotesaPb-FreeLeadFinish

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SA1036KQLT1

Medium Power Transistor(-32V, -0.5A)

Features 1)LargeIC. ICMax.=-500mA 2)LowVCE(sat).Idealforlow-voltage operation. 3)Pb-FreePackageMaybeAvailable. TheG.SuffixDenotesaPb-FreeLeadFinish

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SA1036KQLT1G

Medium Power Transistor Epitaxial planar type PNP silicon transistor

Features 1)LargeIC. ICMax.=-500mA 2)LowVCE(sat).Idealforlow-voltage operation. 3)Pb-FreePackageMaybeAvailable. TheG.SuffixDenotesaPb-FreeLeadFinish

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SA1036KRLT1

Medium Power Transistor(-32V, -0.5A)

Features 1)LargeIC. ICMax.=-500mA 2)LowVCE(sat).Idealforlow-voltage operation. 3)Pb-FreePackageMaybeAvailable. TheG.SuffixDenotesaPb-FreeLeadFinish

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SA1036KRLT1G

Medium Power Transistor Epitaxial planar type PNP silicon transistor

Features 1)LargeIC. ICMax.=-500mA 2)LowVCE(sat).Idealforlow-voltage operation. 3)Pb-FreePackageMaybeAvailable. TheG.SuffixDenotesaPb-FreeLeadFinish

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SA1235FLT1G

General Purpose Transistor Super mini package for easy mounting

DESCRIPTION L2SA1365FLT1GisaminipackagesiliconPNPepitaxialtransistor,itisdesignedforlowfrequencyvoltageapplication. . FEATURE ●Smallcollectortoemittersaturationvoltage.VCE(sat)=-0.3Vmax (@Ic=-100mA,IB=-10mA) ●ExcellentlinearityofDCforwardcurr

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SA1235FLT3G

General Purpose Transistor Super mini package for easy mounting

DESCRIPTION L2SA1365FLT1GisaminipackagesiliconPNPepitaxialtransistor,itisdesignedforlowfrequencyvoltageapplication. . FEATURE ●Smallcollectortoemittersaturationvoltage.VCE(sat)=-0.3Vmax (@Ic=-100mA,IB=-10mA) ●ExcellentlinearityofDCforwardcurr

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SA1365ELT1G

General Purpose Transistor

DESCRIPTION L2SA1365*LT1GisaminipackagesiliconPNPepitaxialtransistor, designedwithhighcollectorcurrentandsmallVCE(sat). FEATURE ●Smallcollectortoemittersaturationvoltage. VCE(sat)=-0.2Vtyp ●ExcellentlinearityofDCforwardcurrentgain. ●Superminipackageforeas

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SA1365ELT3G

General Purpose Transistor

DESCRIPTION L2SA1365*LT1GisaminipackagesiliconPNPepitaxialtransistor, designedwithhighcollectorcurrentandsmallVCE(sat). FEATURE ●Smallcollectortoemittersaturationvoltage. VCE(sat)=-0.2Vtyp ●ExcellentlinearityofDCforwardcurrentgain. ●Superminipackageforeas

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SA1365FLT1G

General Purpose Transistor

DESCRIPTION L2SA1365*LT1GisaminipackagesiliconPNPepitaxialtransistor, designedwithhighcollectorcurrentandsmallVCE(sat). FEATURE ●Smallcollectortoemittersaturationvoltage. VCE(sat)=-0.2Vtyp ●ExcellentlinearityofDCforwardcurrentgain. ●Superminipackageforeas

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SA1365FLT3G

General Purpose Transistor

DESCRIPTION L2SA1365*LT1GisaminipackagesiliconPNPepitaxialtransistor, designedwithhighcollectorcurrentandsmallVCE(sat). FEATURE ●Smallcollectortoemittersaturationvoltage. VCE(sat)=-0.2Vtyp ●ExcellentlinearityofDCforwardcurrentgain. ●Superminipackageforeas

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SA1365GLT1G

General Purpose Transistor

DESCRIPTION L2SA1365*LT1GisaminipackagesiliconPNPepitaxialtransistor, designedwithhighcollectorcurrentandsmallVCE(sat). FEATURE ●Smallcollectortoemittersaturationvoltage. VCE(sat)=-0.2Vtyp ●ExcellentlinearityofDCforwardcurrentgain. ●Superminipackageforeas

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SA1365GLT3G

General Purpose Transistor

DESCRIPTION L2SA1365*LT1GisaminipackagesiliconPNPepitaxialtransistor, designedwithhighcollectorcurrentandsmallVCE(sat). FEATURE ●Smallcollectortoemittersaturationvoltage. VCE(sat)=-0.2Vtyp ●ExcellentlinearityofDCforwardcurrentgain. ●Superminipackageforeas

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SA2029QM3T5G

PNP Silicon General Purpose Amplifier Transistor

PNPSiliconGeneralPurposeAmplifierTransistor ThisPNPtransistorisdesignedforgeneralpurposeamplifierapplications.ThisdeviceishousedintheSOT−723packagewhichisdesignedforlowpowersurfacemountapplications,whereboardspaceisatapremium. •ReducesBoardSpace •Highh

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SA2029RM3T5G

PNP Silicon General Purpose Amplifier Transistor

PNPSiliconGeneralPurposeAmplifierTransistor ThisPNPtransistorisdesignedforgeneralpurposeamplifierapplications.ThisdeviceishousedintheSOT−723packagewhichisdesignedforlowpowersurfacemountapplications,whereboardspaceisatapremium. •ReducesBoardSpace •Highh

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SA2030M3T5G

Low frequency transistor

Lowfrequencytransistor Thetransistorof500mAclasswhichwentonlyinto2125sizeconventionallywasattainedin1608sizesor1208sizes. Features 1)Acollectorcurrentislarge. 2)Collectorsaturationvoltageislow. VCE(sat)≤250mA AtIC=−200mA/IB=−10mA 3)Wedeclare

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SB1197KQLT1

Low Frequency Transistor PNP Silicon

FEATURE ●Highcurrentcapacityincompactpackage. IC=í0.8A. ●Epitaxialplanartype. ●NPNcomplement:L2SD1781K ●Pb-FreePackageisavailable.

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SB1197KQLT1G

Low Frequency Transistor PNP Silicon

FEATURE ●Highcurrentcapacityincompactpackage. IC=í0.8A. ●Epitaxialplanartype. ●NPNcomplement:L2SD1781K ●Pb-FreePackageisavailable.

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SB1197KRLT1

Low Frequency Transistor PNP Silicon

FEATURE ●Highcurrentcapacityincompactpackage. IC=í0.8A. ●Epitaxialplanartype. ●NPNcomplement:L2SD1781K ●Pb-FreePackageisavailable.

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SB1197KRLT1G

Low Frequency Transistor PNP Silicon

FEATURE ●Highcurrentcapacityincompactpackage. IC=í0.8A. ●Epitaxialplanartype. ●NPNcomplement:L2SD1781K ●Pb-FreePackageisavailable.

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SB772P

PNP SURFACE MOUNT TRANSISTOR

PNPSURFACEMOUNTTRANSISTOR ●WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SB772Q

PNP SURFACE MOUNT TRANSISTOR

PNPSURFACEMOUNTTRANSISTOR ●WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SB882P

PNP SURFACE MOUNT TRANSISTOR

PNPSURFACEMOUNTTRANSISTOR ●WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SB882Q

PNP SURFACE MOUNT TRANSISTOR

PNPSURFACEMOUNTTRANSISTOR ●WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SC2411KQLT1G

Medium Power Transistor NPN silicon

FEATURE ●Epitaxialplanartype ●ComplementarytoL2SA1036K ●WedeclarethatthematerialofproductareHalogenFreeand compliancewithRoHSrequirements. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements,AEC-q101qualifiedand

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SC2411KQLT3G

Medium Power Transistor NPN silicon

FEATURE ●Epitaxialplanartype ●ComplementarytoL2SA1036K ●WedeclarethatthematerialofproductareHalogenFreeand compliancewithRoHSrequirements. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements,AEC-q101qualifiedand

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SC2411KRLT1G

Medium Power Transistor NPN silicon

FEATURE ●Epitaxialplanartype ●ComplementarytoL2SA1036K ●WedeclarethatthematerialofproductareHalogenFreeand compliancewithRoHSrequirements. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements,AEC-q101qualifiedand

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SC2411KRLT3G

Medium Power Transistor NPN silicon

FEATURE ●Epitaxialplanartype ●ComplementarytoL2SA1036K ●WedeclarethatthematerialofproductareHalogenFreeand compliancewithRoHSrequirements. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements,AEC-q101qualifiedand

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SC3356LT1G

High-Frequency Amplifier Transistor

DESCRIPTION TheL2SC3356LT1isanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband. Ithasdynamicrangeandgoodcurrentcharacteristic. S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements;AEC-Q101Qu

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SC3356LT3G

High-Frequency Amplifier Transistor

DESCRIPTION TheL2SC3356LT1isanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband. Ithasdynamicrangeandgoodcurrentcharacteristic. S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements;AEC-Q101Qu

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SC3356WT1G

High-Frequency Amplifier Transistor

DESCRIPTION TheL2SC3356WT1isanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband. Ithasdynamicrangeandgoodcurrentcharacteristic. S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements;AEC-Q101Qua

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SC3356WT3G

High-Frequency Amplifier Transistor

DESCRIPTION TheL2SC3356WT1isanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband. Ithasdynamicrangeandgoodcurrentcharacteristic. S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements;AEC-Q101Qua

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SC3837QLT1G

High-Frequency Amplifier Transistor Small rbb Cc and high gain.

Features 1.Hightransitionfrequency.(Typ.fT=1.5GHz) 2.Smallrbb`Ccandhighgain.(Typ.6ps) 3.SmallNF. 4.WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SC3837QLT3G

High-Frequency Amplifier Transistor Small rbb Cc and high gain.

Features 1.Hightransitionfrequency.(Typ.fT=1.5GHz) 2.Smallrbb`Ccandhighgain.(Typ.6ps) 3.SmallNF. 4.WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SC3837T1G

High-Frequency Amplifier Transistor Small rbb Cc and high gain

Features 1.Hightransitionfrequency.(Typ.fT=1.5GHz) 2.Smallrbb`Ccandhighgain.(Typ.6ps) 3.SmallNF. 4.WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SC3837T3G

High-Frequency Amplifier Transistor Small rbb Cc and high gain

Features 1.Hightransitionfrequency.(Typ.fT=1.5GHz) 2.Smallrbb`Ccandhighgain.(Typ.6ps) 3.SmallNF. 4.WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SC3838LT1G

High-Frequency Amplifier Transistor Small rbb Cc and high gain.

Features 1.Hightransitionfrequency.(Typ.fT=3.2GHz) 2.Smallrbb`Ccandhighgain.(Typ.4ps) 3.SmallNF. 4.WedeclarethatthematerialofproductcompliancewithRoHSrequirements. 5.S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SC3838LT3G

High-Frequency Amplifier Transistor Small rbb Cc and high gain.

Features 1.Hightransitionfrequency.(Typ.fT=3.2GHz) 2.Smallrbb`Ccandhighgain.(Typ.4ps) 3.SmallNF. 4.WedeclarethatthematerialofproductcompliancewithRoHSrequirements. 5.S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SC3838NLT1G

High-Frequency Amplifier Transistor

Features 1.Hightransitionfrequency.(Typ.fT=3.2GHz) 2.Smallrbb`Ccandhighgain.(Typ.4ps) 3.SmallNF. 4.WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SC3838NLT3G

High-Frequency Amplifier Transistor

Features 1.Hightransitionfrequency.(Typ.fT=3.2GHz) 2.Smallrbb`Ccandhighgain.(Typ.4ps) 3.SmallNF. 4.WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SC3838QLT1G

High-Frequency Amplifier Transistor Small rbb Cc and high gain.

Features 1.Hightransitionfrequency.(Typ.fT=3.2GHz) 2.Smallrbb`Ccandhighgain.(Typ.4ps) 3.SmallNF. 4.WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SC3838QLT3G

High-Frequency Amplifier Transistor Small rbb Cc and high gain.

Features 1.Hightransitionfrequency.(Typ.fT=3.2GHz) 2.Smallrbb`Ccandhighgain.(Typ.4ps) 3.SmallNF. 4.WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SC4083NT1G

High-Frequency Amplifier Transistor

High-FrequencyAmplifierTransistor ●WedeclarethatthematerialofproductcompliancewithRoHSrequirements. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable.

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SC4083NT3G

High-Frequency Amplifier Transistor

High-FrequencyAmplifierTransistor ●WedeclarethatthematerialofproductcompliancewithRoHSrequirements. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable.

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SC4083PT1G

High-Frequency Amplifier Transistor

High-FrequencyAmplifierTransistor ●WedeclarethatthematerialofproductcompliancewithRoHSrequirements. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable.

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SC4083PT3G

High-Frequency Amplifier Transistor

High-FrequencyAmplifierTransistor ●WedeclarethatthematerialofproductcompliancewithRoHSrequirements. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable.

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SC4083QT1G

High-Frequency Amplifier Transistor

High-FrequencyAmplifierTransistor ●WedeclarethatthematerialofproductcompliancewithRoHSrequirements. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable.

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SC4083QT3G

High-Frequency Amplifier Transistor

High-FrequencyAmplifierTransistor ●WedeclarethatthematerialofproductcompliancewithRoHSrequirements. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable.

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SC4083QWT1G

High-Frequency Amplifier Transistor

High-FrequencyAmplifierTransistor S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite WedeclarethatthematerialofproductcompliancewithRoHSrequirements. andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable.

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SC4226T1G

High-Frequency Amplifier Transistor Small Mini Mold Package

DESCRIPTION TheL2SC4226T1GisalowsupplyvoltagetransistordesignedforVHF,UHFlownoiseamplifier. Itissuitableforahighdensitysurfacemountassemblysincethetransistorhasbeenappliedsmallminimoldpackage. WedeclarethatthematerialofproductcompliancewithRoHSrequirem

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SC4226T3G

High-Frequency Amplifier Transistor Small Mini Mold Package

DESCRIPTION TheL2SC4226T1GisalowsupplyvoltagetransistordesignedforVHF,UHFlownoiseamplifier. Itissuitableforahighdensitysurfacemountassemblysincethetransistorhasbeenappliedsmallminimoldpackage. WedeclarethatthematerialofproductcompliancewithRoHSrequirem

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SC5635LT1G

High-Frequency Amplifier Transistor High gain,low noise

Features 1.Highgainbandwidthproduct.(Typ.fT=8.0GHz) 2.Highgain,lownoise 3.Canoperateatlowvoltage 4.WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SC5635LT3G

High-Frequency Amplifier Transistor High gain,low noise

Features 1.Highgainbandwidthproduct.(Typ.fT=8.0GHz) 2.Highgain,lownoise 3.Canoperateatlowvoltage 4.WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SC5635WT1G

High-Frequency Amplifier Transistor Can operate at low voltage

Features 1.Highgainbandwidthproduct.(Typ.fT=8.0GHz) 2.Highgain,lownoise 3.Canoperateatlowvoltage 4.WedeclarethatthematerialofproductcompliancewithRoHSrequirements. 5.S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequiremen

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SC5635WT3G

High-Frequency Amplifier Transistor Can operate at low voltage

Features 1.Highgainbandwidthproduct.(Typ.fT=8.0GHz) 2.Highgain,lownoise 3.Canoperateatlowvoltage 4.WedeclarethatthematerialofproductcompliancewithRoHSrequirements. 5.S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequiremen

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SC5658QM3T5G

NPN Silicon General Purpose Amplifier Transistor

NPNSiliconGeneralPurposeAmplifierTransistor ThisNPNtransistorisdesignedforgeneralpurposeamplifierapplications.ThisdeviceishousedintheSOT-723packagewhichisdesignedforlowpowersurfacemountapplications,whereboardspaceisatapremium. Features •ReducesBoardSpace

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SC5658RM3T5G

NPN Silicon General Purpose Amplifier Transistor

NPNSiliconGeneralPurposeAmplifierTransistor ThisNPNtransistorisdesignedforgeneralpurposeamplifierapplications.ThisdeviceishousedintheSOT-723packagewhichisdesignedforlowpowersurfacemountapplications,whereboardspaceisatapremium. Features •ReducesBoardSpace

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
L2SD1781KLT1

Medium Power Transistor(32V, 0.8A)

Features 1)VerylowVCE(sat). VCE(sat)

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC

L2S产品属性

  • 类型

    描述

  • 型号

    L2S

  • 制造商

    LRC

  • 制造商全称

    Leshan Radio Company

  • 功能描述

    Medium Power Transistor(-32V, -0.5A)

L2S供应商更多...

更新时间：2025-8-3 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
L2SA1037AKQLT1G
LRC/乐山
24+
NA/
3000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市科恒伟业电子有限公司
L2SA1036KRLT1G
LRC/乐山无线电
1948+
SOT23
18562
只做原装正品现货!或订货假一赔十!
询价
深圳兆威电子有限公司
L2SA1036KQLT1G
LRC/乐山无线电
22+
SOT-23
60000
原装正品现货
询价
深圳市赛特兴科技有限公司
L2SA1037AKQLT1G
LRC
23+
SOT-23
12800
正规渠道,只有原装!
询价
深圳市一线半导体有限公司
L2SA1036KPLT1G
LRC
24+
SOT-23
144000
询价
深圳市纳立科技有限公司
L2SA1036KQLT1G
三年内
1983
只做原装正品
询价
艾睿（深圳）半导体有限公司
L2SA1037AKQLT1G
LRC(乐山无线电)
2447
SOT-23
105000
3000个/圆盘一级代理专营品牌!原装正品,优势现货,
询价
深圳市创新迹电子有限公司
L2SA1037AKQLT1G
LRC/乐山无线电
22+
SOT-23
25000
只有原装原装,支持BOM配单
询价
深圳市威雅利发展有限公司
L2SA1037AKQLT1G
LRC/乐山
13+
SOT-23
590
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市河锋鑫科技有限公司
L2SA1036KQLT1G
LRC
22+
SOT-23
1867
原装现货
询价

L2S芯片相关品牌

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  • L293-翻两番半-H的驱动程序

    配备UnitrodeL293和L293D产品现在从德州仪器宽电源电压范围：4.5V至36V独立的输入逻辑电源内部ESD保护热关断高噪声免疫输入功能类似SGS的L293和SGS的L293D输出电流每通道1（600L293D毫安）峰值输出电流2每个通道（1.2L293D一）电感式输出钳位二极管瞬态抑制（L293D）描述/订购信息在L293和L293D是四高电流半-H的驱动程序

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