Traditional Semiconductor Fuses Very Fast-Acting 1 ??1200 Amperes

Semiconductor Fuses 150/250/500/600/700 VAC ■ Very Fast-Acting ■ 1 – 1000 Amperes Designed to protect today’s equipment and systems, Littelfuse semiconductor fuses are manufactured with Littelfuse-developed technology that sets tomorrow’s standards for accuracy, consistent quality, reliability,

Semiconductor Fuses

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L15S SERIES TRADITIONAL HIGH-SPEED

Description The L15S series is a traditional North American Bolted style high-speed fuse for protection of power semiconductor devices that are rated up to 150 V ac and up to 150 V dc Littelfuse POWR-SPEED ® products offer optimized circuit protection at the extremely fast speed required to p

L15S系列 - 高速半导体保险丝

L15S SERIES TRADITIONAL HIGH-SPEED 150 V ac ? Very Fast-Acting ? 1?1000 A

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Semiconductor Fuses

文件：310.21 Kbytes Page：4 Pages

L15S SERIES TRADITIONAL HIGH-SPEED 150 V ac ? Very Fast-Acting ? 1?1000 A

文件：627.49 Kbytes Page：10 Pages

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 15A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.78Ω (Max) • 100 avalanche tested • Minimum Lot-to-

600V 15A a MOS power Transistor

General Description The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche

600V 15A a MOS Power Transistor

General Description The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche

600V 15A a MOS Power Transistor

General Description The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 15A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.78Ω (Max) • 100 avalanche tested • Minimum Lot-to-