| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码：L132B；LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver 1 Features • LM5112-Q1 is Qualified for Automotive Applications • AEC-Q100 Grade 1 Qualified • Manufactured on an Automotive Grade Flow • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7-A Sink and 3-A Source Current • Fast Propagation Times: 25 ns (Typical) • Fast Ri | TI 德州仪器 |   | ||
丝印代码：L132B；LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver 1 Features • LM5112-Q1 is Qualified for Automotive Applications • AEC-Q100 Grade 1 Qualified • Manufactured on an Automotive Grade Flow • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7-A Sink and 3-A Source Current • Fast Propagation Times: 25 ns (Typical) • Fast Ri | TI 德州仪器 | | ||
丝印代码：L132B；LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver 1 Features • LM5112-Q1 is Qualified for Automotive Applications • AEC-Q100 Grade 1 Qualified • Manufactured on an Automotive Grade Flow • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7-A Sink and 3-A Source Current • Fast Propagation Times: 25 ns (Typical) • Fast Ri | TI 德州仪器 | | ||
丝印代码：L132B；LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver 1 Features • LM5112-Q1 is Qualified for Automotive Applications • AEC-Q100 Grade 1 Qualified • Manufactured on an Automotive Grade Flow • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7-A Sink and 3-A Source Current • Fast Propagation Times: 25 ns (Typical) • Fast Ri | TI 德州仪器 | | ||
丝印代码：L132B；LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver 1 Features • LM5112-Q1 is Qualified for Automotive Applications • AEC-Q100 Grade 1 Qualified • Manufactured on an Automotive Grade Flow • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7-A Sink and 3-A Source Current • Fast Propagation Times: 25 ns (Typical) • Fast Ri | TI 德州仪器 | | ||
丝印代码：L132B；LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver 1 Features • LM5112-Q1 is Qualified for Automotive Applications • AEC-Q100 Grade 1 Qualified • Manufactured on an Automotive Grade Flow • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7-A Sink and 3-A Source Current • Fast Propagation Times: 25 ns (Typical) • Fast Ri | TI 德州仪器 | | ||
丝印代码：L132B；LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver 1 Features • LM5112-Q1 is Qualified for Automotive Applications • AEC-Q100 Grade 1 Qualified • Manufactured on an Automotive Grade Flow • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7-A Sink and 3-A Source Current • Fast Propagation Times: 25 ns (Typical) • Fast Ri | TI 德州仪器 | | ||
丝印代码：L132B；LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver 1 Features • LM5112-Q1 is Qualified for Automotive Applications • AEC-Q100 Grade 1 Qualified • Manufactured on an Automotive Grade Flow • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7-A Sink and 3-A Source Current • Fast Propagation Times: 25 ns (Typical) • Fast Ri | TI 德州仪器 | | ||
丝印代码：L132B；LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver 1 Features • LM5112-Q1 is Qualified for Automotive Applications • AEC-Q100 Grade 1 Qualified • Manufactured on an Automotive Grade Flow • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7-A Sink and 3-A Source Current • Fast Propagation Times: 25 ns (Typical) • Fast Ri | TI 德州仪器 | | ||
丝印代码：L132B；LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver 1 Features • LM5112-Q1 is Qualified for Automotive Applications • AEC-Q100 Grade 1 Qualified • Manufactured on an Automotive Grade Flow • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7-A Sink and 3-A Source Current • Fast Propagation Times: 25 ns (Typical) • Fast Ri | TI 德州仪器 | | ||
丝印代码：L132B；LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver 1 Features • LM5112-Q1 is Qualified for Automotive Applications • AEC-Q100 Grade 1 Qualified • Manufactured on an Automotive Grade Flow • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7-A Sink and 3-A Source Current • Fast Propagation Times: 25 ns (Typical) • Fast Ri | TI 德州仪器 | | ||
丝印代码：L132B；LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver 1 Features • LM5112-Q1 is Qualified for Automotive Applications • AEC-Q100 Grade 1 Qualified • Manufactured on an Automotive Grade Flow • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7-A Sink and 3-A Source Current • Fast Propagation Times: 25 ns (Typical) • Fast Ri | TI 德州仪器 | | ||
POWER TRANSISTORS(8.0A,60-100V,70W) PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS | MOSPEC 统懋 | | ||
L-BAND SPDT SWITCH DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the | NEC 瑞萨 | | ||
L-BAND SPDT SWITCH DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us | NEC 瑞萨 | | ||
L-BAND SPDT SWITCH DESCRIPTION µPG132G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us | NEC 瑞萨 | | ||
L-BAND DPDT MMIC SWITCH DESCRIPTION The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch developed for digital cellular or cordless telephone and PCS applications. This device feature low insertion loss, high handling power with low voltage operation. It is housed in a very small 8-pin plastic SSOP package ava | NEC 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI/德州仪器 |
24+ |
QFN |
47186 |
郑重承诺只做原装进口现货 |
|||
TI(德州仪器) |
2511 |
WSON-10 |
8484 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
TI(德州仪器) |
25+ |
WSON-10-EP(4x4) |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
TI/德州仪器 |
23+ |
SSOP24 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
TI |
25+ |
WSON (DPR) |
6000 |
原厂原装,价格优势 |
|||
TI/德州仪器 |
24+ |
WSON10 |
3902 |
只供应原装正品 欢迎询价 |
|||
TI/德州仪器 |
23+ |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
TI(德州仪器) |
2450+ |
SMD |
9850 |
只做原装正品代理渠道!假一赔三! |
|||
TI/德州仪器 |
24+ |
N/A |
20000 |
原厂直供原装正品 |
|||
TI |
23+ |
WSON10 |
3200 |
正规渠道,只有原装! |
L132B规格书下载地址
L132B参数引脚图相关
- l69
- l6599
- l6563
- L6562D
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- l6203
- l603
- l491
- l482
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- l3g4200d
- l393
- l32
- l298n
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- l293d
- l234
- L-13312
- L-13311
- L-13310
- L1330A
- L-13309
- L-13308
- L-13307
- L-13306
- L-13305
- L-13304
- L-13303
- L-13302
- L-13301
- L-13300
- L132XY
- L132XPG
- L132XN
- L132XID
- L132XI
- L132XG
- L-132ID
- L-132CB5ID
- L132CB5ID
- L-132CB5GD
- L132CB5GD
- L132CB4HD
- L132CB3ID
- L132CB3HD
- L132CB2YDTL2
- L-132CB/4ID
- L-132CB/4GD
- L132CB/4GD
- L132CB/3YD
- L132CB/3ID
- L132CB/3HD
- L132CB/3GD
- L132CB/2YD
- L132CB/2ID
- L132CB/2HD
- L132CB/2GD
- l1329
- L13-28/24
- L1327-A
- l1327
- L-13268
- L-13265
- L-13264
- L-13263
- L-13262
- L-13261
- L-13260
- L13-259
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- L13-255
- L-13255
- L-13254
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- L-13252
- L-13251
- L-13250
- L-13215
L132B数据表相关新闻
L18P050D15原装现货价格美丽
L18P050D15原装现货价格美丽
2024-11-14L130-6580002 原装价美
L130-6580002 原装价美
2024-8-19L200CV
原装进口代理 全新原装现货 支持第三方机构验证
2022-6-18L1050,SOP-16
L1050,SOP-16，当天发货0755-82732291全新原装现货或门市自取.
2020-9-7L200-可调电压和电流调节器
该L200是单片集成电路的电压和电流可编程调节。这是可在Pentawatt[包或4引脚TO - 3metalcase.Current限制，powerlimiting，热关闭和输入过压保护（高达60 V），使L200几乎井喷的证明。该L200可以用来代替固定电压当稳压器输出电压精度高需要和无需股票的范围固定电压稳压器。 特点 可调输出电流高达2 A（保证高达温度Tj =150 ° C） 可调输出电压下降到2.85 V 输入过压保护（高达60 V，10毫秒） 短路保护 输出TRANSISTORS.O
2013-1-24L1087-3.3-0.8A固定和可调低压差线性稳压器（LDO）
在L1087系列是积极的，低差三端稳压器与0.8A输出电流能力。这些器件专为在低电压应用程序提供更低的电压差和更快的瞬态响应。这些设备充分保护，以防止过流故障，过温运行，输入极性颠倒，颠倒铅插入，瞬态电压尖峰...等。芯片上的参考电压微调1％和功能的最大的低压差1.45伏特。在L1087系列稳压器提供固定和可调电压选项可用节省空间的SOT- 89和TO -92封装。 特点 固定3.3V或可调输出电压 低压差电压 低接地电流 快速瞬态响应
2013-1-24
DdatasheetPDF页码索引
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