SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

15.0 Watts Single Ended Package Style SO8-1 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM

丝印代码：L125B；LP38690, LP38692 1-A Low Dropout CMOS Linear Regulators Stable with Ceramic Output Capacitors

1 Features 1• Wide Input Voltage Range (2.7 V to 10 V) • 2.5% Output Accuracy (25°C) • Low Dropout Voltage: 450 mV at 1 A (typical, 5 VOUT) • Precision (Trimmed) Bandgap Reference • Ensured Specifications for –40°C to 125°C • 1-μA Off-State Quiescent Current • Thermal Overload Protecti

丝印代码：L125B；LP38690, LP38692 1-A Low Dropout CMOS Linear Regulators Stable with Ceramic Output Capacitors

1 Features 1• Wide Input Voltage Range (2.7 V to 10 V) • 2.5% Output Accuracy (25°C) • Low Dropout Voltage: 450 mV at 1 A (typical, 5 VOUT) • Precision (Trimmed) Bandgap Reference • Ensured Specifications for –40°C to 125°C • 1-μA Off-State Quiescent Current • Thermal Overload Protecti

丝印代码：L125B；LP38690, LP38692 1-A Low Dropout CMOS Linear Regulators Stable with Ceramic Output Capacitors

1 Features 1• Wide Input Voltage Range (2.7 V to 10 V) • 2.5% Output Accuracy (25°C) • Low Dropout Voltage: 450 mV at 1 A (typical, 5 VOUT) • Precision (Trimmed) Bandgap Reference • Ensured Specifications for –40°C to 125°C • 1-μA Off-State Quiescent Current • Thermal Overload Protecti

丝印代码：L125B；LP38690, LP38692 1-A Low Dropout CMOS Linear Regulators Stable with Ceramic Output Capacitors

1 Features 1• Wide Input Voltage Range (2.7 V to 10 V) • 2.5% Output Accuracy (25°C) • Low Dropout Voltage: 450 mV at 1 A (typical, 5 VOUT) • Precision (Trimmed) Bandgap Reference • Ensured Specifications for –40°C to 125°C • 1-μA Off-State Quiescent Current • Thermal Overload Protecti

丝印代码：L125B；LP38690, LP38692 1-A Low Dropout CMOS Linear Regulators Stable with Ceramic Output Capacitors

1 Features 1• Wide Input Voltage Range (2.7 V to 10 V) • 2.5% Output Accuracy (25°C) • Low Dropout Voltage: 450 mV at 1 A (typical, 5 VOUT) • Precision (Trimmed) Bandgap Reference • Ensured Specifications for –40°C to 125°C • 1-μA Off-State Quiescent Current • Thermal Overload Protecti

5.0x7.0mm Surface Mount LVDS Clock Oscillator Series

Description The Connor Winfield Lxxx - Series is a 5x7.5mm Surface Mount, LVDS, Fixed Frequency Crystal Controlled Oscillator (XO) designed for applications requiring tight frequency stability, wide temperature range and low jitter. Operating at 2.5V or 3.3V supply voltage, the Lxxx - Series prov

COMPACT UV-VIS S2D2 FIBER LIGHT SOURCE (UV Enhanced Type)

文件：159.34 Kbytes Page：2 Pages

L1251AWV LED灯泡连接器1.25mm间距

ELECTROSTATIC CHARGE REMOVER USING PHOTOIONIZATION

ELECTROSTATIC CHARGE REMOVER USING PHOTOIONIZATION

文件：202.98 Kbytes Page：4 Pages

Ideal for eliminating electrostatic charges in a vacuum

Ideal for eliminating electrostatic charges in a vacuum

文件：483.95 Kbytes Page：4 Pages

Photo IC for optical link

文件：273.04 Kbytes Page：4 Pages

SIL Resistor Network

文件：384.72 Kbytes Page：5 Pages

General Purpose Silicon Rectifier

Description: The NTE125 is a general purpose silicon rectifier in a DO41 case designed for low power and switching applications.

CERMAX XENON ARC LAMPS

Description The Cermax® xenon arc lamp is an innovative lamp design in the specialty lighting industry. These lamps were introduced in the early 1980’s and are now used in endo-scopes in most major hospitals worldwide, in high brightness projection display systems, and for a wide variety of other

P-channel enhancement mode MOS transistor

DESCRIPTION P-channel enhancement mode MOS transistor in an 8-pin plastic SO8 (SOT96-1) package. FEATURES • High-speed switching • No secondary breakdown • Very low on-resistance. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectification.

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12