Small emission spot LED using current con-ned chip

Small emission spot LED using current confined chip The L10596 is infrared LED with a microball lens cemented to the current confinement chip surface. This combination ensures narrow directivity and uniform emission. In particular, the L10596-02 uses a lens cap that delivers even narrower directi

Small emission spot LED using current con-ned chip

Small emission spot LED using current confined chip The L10596 is infrared LED with a microball lens cemented to the current confinement chip surface. This combination ensures narrow directivity and uniform emission. In particular, the L10596-02 uses a lens cap that delivers even narrower directi

Small emission spot LED using current con-ned chip

Small emission spot LED using current confined chip The L10596 is infrared LED with a microball lens cemented to the current confinement chip surface. This combination ensures narrow directivity and uniform emission. In particular, the L10596-02 uses a lens cap that delivers even narrower directi

Infrared LED

文件：205.16 Kbytes Page：4 Pages

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI HF50-12F is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting, is extremely suitable and capable of withstanding high VSRW under operating conditions. FEATURES: • PG =

Nylon PCB Supports - Blind and Key Slot Mount

文件：114.35 Kbytes Page：1 Pages

NPN SILICON RF POWER TRANSISTOR

文件：21.48 Kbytes Page：2 Pages

~45째 x 15째 oval beam optimized for Nichia NJSx036. Assembly with white holder.

文件：2.00967 Mbytes Page：4 Pages