1.1x3.4mm RECTANGULAR SOLID LAMPS

Description The Bright Red color devices are made with Gallium Aluminum Arsenide Red Light Emitting Diode. The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode. The Green source color devices are made with Gallium

1.1x3.4mm RECTANGULAR SOLID LAMPS

Description The Bright Red color devices are made with Gallium Aluminum Arsenide Red Light Emitting Diode. The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode. The Green source color devices are made with Gallium

1.1x3.4mm RECTANGULAR SOLID LAMPS

Description The Bright Red color devices are made with Gallium Aluminum Arsenide Red Light Emitting Diode. The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode. The Green source color devices are made with Gallium

1.1x3.4mm RECTANGULAR SOLID LAMPS

Description The Bright Red color devices are made with Gallium Aluminum Arsenide Red Light Emitting Diode. The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode. The Green source color devices are made with Gallium

1.1x3.4mm RECTANGULAR SOLID LAMPS

Description The Bright Red color devices are made with Gallium Aluminum Arsenide Red Light Emitting Diode. The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode. The Green source color devices are made with Gallium

1.1 x 3.4mm RECTANGULAR SOLID LAMPS

SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 10.0 Amperes)

FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

Integrated Circuit FM IF TV Amp

Features: ● Excellent Limiting Characteristics ● High Gain ● High AM Rejection Ratio ● Wide Band Amp