Features

Low on-state resistance

N-channel RDS(on)1 = 28 mΩ MAX. (VGS = 10 V, ID = 3 A)

RDS(on)2 = 40 mΩ MAX. (VGS = 4.5 V, ID = 3 A)

P-channel RDS(on)1 = 60 mΩ MAX. (VGS = -10 V, ID = -3 A)

RDS(on)2 = 80 mΩ MAX. (VGS = -4.5 V, ID = -3 A)

Low input capacitance

N-channel Ciss = 500 pF TYP.

P-channel Ciss = 460 pF TYP.

Built-in gate protection diode

Small and surface mount package