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KSMT315P中文资料
KSMT315P数据手册规格书PDF详情
Description
This P-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
1) Low gate charge.
2) Green device available.
3) Advanced high cell denity trench technology for ultra RDS(ON)
4) Excellent package for good heat dissipation.
更新时间：2026-2-6 14:55:00
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
KERSEMI |
25+ |
TO-251 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
KERSEMI |
24+ |
TO-251 |
5000 |
全现原装公司现货 |
|||
KERSEMI |
TO-251 |
22+ |
6000 |
十年配单,只做原装 |
|||
KERSEMI |
25+ |
TO-251 |
10000 |
原装现货假一罚十 |
|||
KERSEMI |
23+ |
TO251 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
KERSEMI/科盛美 |
24+ |
TO-251 |
60000 |
||||
KERSEMI/科盛美 |
23+ |
TO-251 |
50000 |
全新原装正品现货,支持订货 |
KSMT315P 资料下载更多...
KSMT315P 芯片相关型号
- 0510470700_17
- 0530471210_17
- 0530471410_17
- 0621005800
- 0622018874
- 0761459608
- 1490356-7
- 1490357-1
- 3403.0176.11
- 3404.2421.22
- B1047AS-470M
- B300002
- BH3548F-E2
- BH76106HFV_15
- C0603Y104J5RALTU
- C0805Y104M1RALTU
- C1812Y104J1RALTU
- CX8045GB19660H0HEQZ1
- CX8045GB20000H0HEQZ1
- HMM5240B
- HMM55C10
- HMM55C22
- HMM55C3V9
- HT75A0-7
- M040141
- US3ABF
- VC2220K301R130
- VC2220L401R130
- XZM2DG54W-1
- XZM2MR53W-8
KERSEMI相关芯片制造商
Datasheet数据表PDF页码索引
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