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IRFU120ZPBF中文资料
IRFU120ZPBF数据手册规格书PDF详情
AUTOMOTIVE MOSFET
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
IRFU120ZPBF产品属性
- 类型
描述
- 型号
IRFU120ZPBF
- 功能描述
MOSFET MOSFT 100V 8.7A 190mOhm 6.9nC Qg
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-251 |
1002 |
||||
IR |
23+ |
TO-251 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
International Rectifier |
2022+ |
1 |
全新原装 货期两周 |
||||
IR |
11+PBF |
TO-251 |
8950 |
现货 |
|||
INFINEON |
25+ |
TO-251 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
|||
IR |
23+ |
TO-251 |
50000 |
全新原装正品现货,支持订货 |
|||
VB |
21+ |
I-PAK |
10000 |
原装现货假一罚十 |
|||
Infineon Technologies |
22+ |
TO2513 Short Leads IPak TO251A |
9000 |
原厂渠道,现货配单 |
|||
ir |
25+ |
500000 |
行业低价,代理渠道 |
||||
IR |
11+ |
TO-251 |
9150 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
IRFU120ZPBF 价格
参考价格：￥2.5395
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KERSEMI相关芯片制造商
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