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IRFR120ZPBF中文资料
IRFR120ZPBF数据手册规格书PDF详情
AUTOMOTIVE MOSFET
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
IRFR120ZPBF产品属性
- 类型
描述
- 型号
IRFR120ZPBF
- 功能描述
MOSFET 100V 1 N-CH HEXFET 26mOhms 70nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
TO-252 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
17+ |
TO-252 |
6200 |
||||
IR |
25+ |
TO-252 |
75 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
IR |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
IR |
23+ |
NA |
1228 |
专做原装正品,假一罚百! |
|||
IR |
20+ |
DPAK |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
International Rectifier |
2022+ |
1 |
全新原装 货期两周 |
||||
IR |
24+ |
65230 |
|||||
IR |
13+PBF |
TO-252 |
10575 |
优势 |
IRFR120ZPBF 价格
参考价格：￥1.5428
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KERSEMI相关芯片制造商
Datasheet数据表PDF页码索引
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