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IRFIZ24G中文资料
IRFIZ24G数据手册规格书PDF详情
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsinkusing a single clip or by a single screw fixing.
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kVRMS(t = 60 s; f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
• 175 °C Operating Temperature
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available
IRFIZ24G产品属性
- 类型
描述
- 型号
IRFIZ24G
- 功能描述
MOSFET N-Chan 60V 14 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
17+ |
TO-220F |
31518 |
原装正品 可含税交易 |
|||
VISHAY(威世) |
24+ |
TO-220 |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
24+ |
TO 220F |
160978 |
明嘉莱只做原装正品现货 |
|||
IR |
06+ |
TO-220 |
4000 |
全新原装 绝对有货 |
|||
IR |
24+ |
TO-220F |
85000 |
||||
IOR |
16+ |
TO-220 |
10000 |
全新原装现货 |
|||
VIS |
23+ |
NA |
13256 |
专做原装正品,假一罚百! |
|||
IR |
20+ |
TO-220F |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
IR |
24+ |
TO-220F |
6430 |
原装现货/欢迎来电咨询 |
|||
IR |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
IRFIZ24GPBF 价格
参考价格:¥4.2162
IRFIZ24G 资料下载更多...
IRFIZ24G 芯片相关型号
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- 08051C103JA74A
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- 1-1462050-2
- 1375055-7
- 2-5111595-0
- 4-176756-2
- 5-104068-5
- 90814-0826
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- 917688-1
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- SN74ABT540DWG4
- SN74ABT540DWR
- TLC271IDG4
- TLV2721CDBVTG4
- TNPW0402.06031K32DEEA
- TNPW08051M32FHEA
- TNPW12101M32DHEA
KERSEMI相关芯片制造商
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