General Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction , electronic lamp ballasts based on half bridge topology, DC/DC Converters and switching mode power supplies.

FEATURES

• VDSS = 60V, ID = 60A

• Drain-Source ON Resistance :

• RDS(ON) =13.2m (Max.) @VGS = 10V

• Qg(typ.) = 48nC