VARACTOR DIODES HF/VHF/UHF Hyperabrupt Junction

DESCRIPTION These families of hyperabrupt junction RF varactor diodes feature computer controlled grown junction epitaxy which provides extraordinary consistency and the highest Q available in a 22 Volt hyperabrupt varactor. These series give the designer a full capacitance range of 10 to 500 pF

VHF HYPERABRUPT TUNNING VARACTORS

[Loral] VHF HYPERABRUPT TUNNING VARACTORS

Varactors (Packaged and Die form)

VHF HYPERABRUPT TUNNING VARACTORS

[Loral] VHF HYPERABRUPT TUNNING VARACTORS

封装/外壳：模具 包装：散装 描述：SI TVAR NON HERMETIC CHIP 分立半导体产品 二极管 - 可变电容（变容器，可变电抗器）

封装/外壳：2-SMD，扁平引线 包装：托盘 描述：SI TVAR HERMETIC MICROSTRIP 分立半导体产品 二极管 - 可变电容（变容器，可变电抗器）

Vibrating level switch

The device Type 8110 is a filling level switch for liquids, using a tuning fork as the sensor element. It is designed for industrial use in all areas of process technology and can be used in liquids. Typical applications are overflow or run-dry protection. The small tuning fork (40 mm in lengt

1.5 Watt - 20 Volts, Class C Microwave 2300 MHz

GENERAL DESCRIPTION The 2301 is a COMMON BASE transistor capable of providing 1.5 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed

SOT-23 Plastic-Encapsulate MOSFETS

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-2.8A竊?20V P-CHANNEL MOSFET

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10V P-Channel Enhanced MOS FET

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